Diodes BCX Hoja de datos

No.	parte #	Fabricante	Descripción
1	BCX5410TC	DIODES	NPN Medium Power Transistor • BVCEO > 45V, 60V & 80V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • Low Saturation Voltage VCE(sat) < 500mV @ 0.5A • Gain Groups 10 and 16 • Epitaxial Planar Die Construction • Complementary PNP Types: BCX51, 52, and 53 •
2	BCX54TC	DIODES	NPN Medium Power Transistor • BVCEO > 45V, 60V & 80V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • Low Saturation Voltage VCE(sat) < 500mV @ 0.5A • Gain Groups 10 and 16 • Epitaxial Planar Die Construction • Complementary PNP Types: BCX51, 52, and 53 •
3	BCX5410TA	DIODES	NPN Medium Power Transistor • BVCEO > 45V, 60V & 80V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • Low Saturation Voltage VCE(sat) < 500mV @ 0.5A • Gain Groups 10 and 16 • Epitaxial Planar Die Construction • Complementary PNP Types: BCX51, 52, and 53 •
4	BCX5416-13R	DIODES	NPN Medium Power Transistor • BVCEO > 45V, 60V & 80V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • Low Saturation Voltage VCE(sat) < 500mV @ 0.5A • Gain Groups 10 and 16 • Epitaxial Planar Die Construction • Complementary PNP Types: BCX51, 52, and 53 •
5	BCX5416TC	DIODES	NPN Medium Power Transistor • BVCEO > 45V, 60V & 80V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • Low Saturation Voltage VCE(sat) < 500mV @ 0.5A • Gain Groups 10 and 16 • Epitaxial Planar Die Construction • Complementary PNP Types: BCX51, 52, and 53 •
6	BCX54TA	DIODES	NPN Medium Power Transistor • BVCEO > 45V, 60V & 80V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • Low Saturation Voltage VCE(sat) < 500mV @ 0.5A • Gain Groups 10 and 16 • Epitaxial Planar Die Construction • Complementary PNP Types: BCX51, 52, and 53 •
7	BCX5510TC	DIODES	NPN Medium Power Transistor • BVCEO > 45V, 60V & 80V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • Low Saturation Voltage VCE(sat) < 500mV @ 0.5A • Gain Groups 10 and 16 • Epitaxial Planar Die Construction • Complementary PNP Types: BCX51, 52, and 53 •
8	BCX51	Diodes	PNP SILICON PLANAR MEDIUM POWER TRANSISTORS • BVCEO > -45V, -60V & -80V • IC = -1A Continuous Collector Current • ICM = -2A Peak Pulse Current • Low Saturation Voltage VCE(sat) < -500mV @ -0.5A • Gain Groups 10 and 16 • Complementary NPN Types: BCX54, 55, and 56 • Totally Lead-Free & Fully RoH
9	BCX52	Diodes	PNP SILICON PLANAR MEDIUM POWER TRANSISTORS • BVCEO > -45V, -60V & -80V • IC = -1A Continuous Collector Current • ICM = -2A Peak Pulse Current • Low Saturation Voltage VCE(sat) < -500mV @ -0.5A • Gain Groups 10 and 16 • Complementary NPN Types: BCX54, 55, and 56 • Totally Lead-Free & Fully RoH
10	BCX53	Diodes	PNP SILICON PLANAR MEDIUM POWER TRANSISTORS • BVCEO > -45V, -60V & -80V • IC = -1A Continuous Collector Current • ICM = -2A Peak Pulse Current • Low Saturation Voltage VCE(sat) < -500mV @ -0.5A • Gain Groups 10 and 16 • Complementary NPN Types: BCX54, 55, and 56 • Totally Lead-Free & Fully RoH
11	BCX54	Diodes	NPN Medium Power Transistor • BVCEO > 45V, 60V & 80V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • Low Saturation Voltage VCE(sat) < 500mV @ 0.5A • Gain Groups 10 and 16 • Epitaxial Planar Die Construction • Complementary PNP Types: BCX51, 52, and 53 •
12	BCX5316Q	Diodes	PNP Transistor  BVCEO > -45V, -60V & -80V  IC = -1A Continuous Collector Current  ICM = -2A Peak Pulse Current  Low Saturation Voltage VCE(SAT) < -500mV @ -0.5A  Complementary NPN Types: BCX5616Q  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halog
13	BCX5610TC	DIODES	NPN Medium Power Transistor • BVCEO > 45V, 60V & 80V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • Low Saturation Voltage VCE(sat) < 500mV @ 0.5A • Gain Groups 10 and 16 • Epitaxial Planar Die Construction • Complementary PNP Types: BCX51, 52, and 53 •
14	BCX5516TA	DIODES	NPN Medium Power Transistor • BVCEO > 45V, 60V & 80V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • Low Saturation Voltage VCE(sat) < 500mV @ 0.5A • Gain Groups 10 and 16 • Epitaxial Planar Die Construction • Complementary PNP Types: BCX51, 52, and 53 •
15	BCX5510TA	DIODES	NPN Medium Power Transistor • BVCEO > 45V, 60V & 80V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • Low Saturation Voltage VCE(sat) < 500mV @ 0.5A • Gain Groups 10 and 16 • Epitaxial Planar Die Construction • Complementary PNP Types: BCX51, 52, and 53 •
16	BCX55TC	DIODES	NPN Medium Power Transistor • BVCEO > 45V, 60V & 80V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • Low Saturation Voltage VCE(sat) < 500mV @ 0.5A • Gain Groups 10 and 16 • Epitaxial Planar Die Construction • Complementary PNP Types: BCX51, 52, and 53 •
17	BCX5616TA	DIODES	NPN Medium Power Transistor • BVCEO > 45V, 60V & 80V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • Low Saturation Voltage VCE(sat) < 500mV @ 0.5A • Gain Groups 10 and 16 • Epitaxial Planar Die Construction • Complementary PNP Types: BCX51, 52, and 53 •
18	BCX5616TC	DIODES	NPN Medium Power Transistor • BVCEO > 45V, 60V & 80V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • Low Saturation Voltage VCE(sat) < 500mV @ 0.5A • Gain Groups 10 and 16 • Epitaxial Planar Die Construction • Complementary PNP Types: BCX51, 52, and 53 •
19	BCX5610TA	DIODES	NPN Medium Power Transistor • BVCEO > 45V, 60V & 80V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • Low Saturation Voltage VCE(sat) < 500mV @ 0.5A • Gain Groups 10 and 16 • Epitaxial Planar Die Construction • Complementary PNP Types: BCX51, 52, and 53 •
20	BCX68	Diodes	NPN Transistor • BVCEO > 20V • High current capability Maximum Continuous Current IC = 1A • Low saturation voltage VCE(sat) < 500mV @ 1A • Complementary PNP type: BCX69 • Lead Free, RoHS Compliant (Note 1) • Halogen and Antimony Free, “Green” Device (Note 2) • Qual