| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba |
Silicon Epitaxial Planar Switching Diodes (1) AEC-Q101 qualified (Note 1) (2) Fast reverse recovery time : trr = 1.6 ns (typ.) Note 1: For detail information, please contact our sales. 3. Packaging and Internal Circuit USM 1SS302A 1: Anode 1 2: Cathode 2 3: Cathode1 / Anode 2 ©2017-2022 1 |
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Toshiba |
Silicon Epitaxial Planar Switching Diodes (1) Small package (2) Low reverse current. : IR(2) = 1.0 µA (max) (3) Small total capacitance: Ct = 3.0 pF (max) 3. Packaging and Internal Circuit 1SS403E 1: Cathode 2: Anode ESC 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta |
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LGE |
Switching Diodes Low forward voltage : VF(3)=0.9V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) MARKING: B3 Maximum Ratings @TA=25℃ Parameter Non-Repetitive Peak reverse voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Cur |
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PACELEADER |
SURFACE MOUNT SWITCHING DIODES High Speed 4ns Low Reverse Leakage Current . Small Outline Surface Mount SOD-323 Package MAXIMUM RATING Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(Surge) Value 100 100 500 Unit Vdc mAdc mAdc THERMAL CHARAC |
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WEITRON |
Surface Mount Switching Diodes * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose Switching Applications Mechanical Data: * Case: SOT-23, Molded Plastic * Terminals: Solderable per MIL-STD-202, Method 208 |
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TRANSYS |
Plastic-Encapsulated Diodes Power dissipation PD : 150 mW(Tamb=25℃) Forward Current IF : 100 m A Reverse Voltage VR: 80 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ 2. 9 1. 9 0. 95 0. 95 1. 0 SOT-23 2. 4 1. 3 Unit: mm 0. 4 Mar ki ng A3 ELEC |
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DIODES |
30V P-CHANNEL MOSFET and Benefits Low RDS(ON) – Ensures On-State Losses Are Minimized Small Form Factor Thermally Efficient Package Enables Higher Density End Products Occupies just 33% of The Board Area Occupied by SO-8 Enabling Smaller End Product ESD Protected |
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Leshan Radio Company |
SWITCHING DIODES |
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Leshan Radio Company |
SWITCHING DIODES |
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Jin Yu Semiconductor |
Schottoky DIODES Low forward voltage : VF=0.38V(typ.) Low reverse current : IR=50uA(max) Small total capacitance : CT =46pF(typ.) 1SS4 01 SOT-323 1.ANODE 2. NC 3. CATHODE MARKING: Maximum Ratings @TA=25℃ Parameter Non-Repetitive Peak reverse voltage Peak Repetiti |
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HOTTECH |
SWITCHING DIODES Low forward voltage : VF(3)=0.92V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) 1SS187 MARKING: D3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Limits Non-Repetitive Peak reverse voDlCtagBelocking Voltage Forward Contin |
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Kexin |
ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES Low forward voltage:VF(3) = 0.90 V(Typ) Fast reverse recovery time:trr = 1.6 ns (Typ) Small total capacitance:CT = 0.9 pF(Typ) Absolute Maxim um Ratings Ta = 25 Param eter Maxim um (peak) reverse voltage Reverse voltage Maxim um (peak) forward curr |
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JINAN JINGHENG ELECTRONICS |
SMALL SIGNAL SCHOTTKY DIODES Detection effciency is very good Small temperature coefficient High reliability with glass seal For use in RECORDER, TV, RADIO, TELEPHONE as detectors, super high speed switching circuits small current rectifier High temperature soldering guaranteed |
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NEC |
(1SS220 / 1SS221) SILICON SWITCHING DIODES |
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LGE |
Small Signal Switching Diodes Silicon epitaxial planar diode High speed switching diode These diodes are also available in glass case DO-34 Mechanical Data Case: DO-35, glass case Polarity: Color band denotes cathode Weight: 0.004 ounces, 0.13 grams Mounting position: Any Dimens |
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Taiwan Semiconductor |
Hermetically Sealed Glass Switching Diodes - Fast switching device (trr < 4.0 ns) - Through-hole mount device type - DO-34 package (JEDEC DO-204) - Hermetically sealed glass - Compression bonded construction - All external surfaces are corrosion resistant and leads are readily solderable - Ro |
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Diodes |
DUAL N-CHANNEL MOSFET and Benefits Low On-Resistance Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) This part is qualified to JEDEC standards (as references in AEC-Q) for High Re |
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TRANSYS |
Plastic-Encapsulate Diodes z Small surface mounting type z High Speed z High reliability with high surge current handing capability Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Peak reverse voltage DC reverse voltage Peak forward current Mea |
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WEITRON |
Surface Mount Switching Diodes * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose Switching Applications Mechanical Data: * Case: SOT-23, Molded Plastic * Terminals: Solderable per MIL-STD-202, Method 208 |
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MCC |
High Speed Switching Diodes x Low Forward Voltage x Low Leakage Current x Surface Mount SOT-23 Package • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 Pin Configuration Top View B3 150mW High Speed Switching Diodes 80 Volt SOT-23 A D Maxim |
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Desde 2024. D4U Semiconductor.
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