No. | parte # | Fabricante | Descripción | Hoja de Datos |
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DEVELOPER MICROELECTRONICS |
Quasi-Resonant PSR CC/CV PWM Power Switch Low Cost Solution Built-in 800V power BJT Quasi-Resonant Primary Side Regulation (QR-PSR) Control with High Efficiency Multi-Mode PSR Control Fast Dynamic Response Built-in Dynamic Base Drive Audio Noise Free Operation ±4% CC and CV Reg |
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DEVELOPER MICROELECTRONICS |
Quasi-Resonant PSR CC/CV PWM Power Switch Low Cost Solution Built-in 800V power BJT Quasi-Resonant Primary Side Regulation (QR-PSR) Control with High Efficiency Multi-Mode PSR Control Fast Dynamic Response Built-in Dynamic Base Drive Audio Noise Free Operation ±4% CC and CV Reg |
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DEVELOPER MICROELECTRONICS |
Quasi-Resonant PSR CC/CV PWM Power Switch Low Cost Solution Built-in 800V power BJT Quasi-Resonant Primary Side Regulation (QR-PSR) Control with High Efficiency Multi-Mode PSR Control Fast Dynamic Response Built-in Dynamic Base Drive Audio Noise Free Operation ±4% CC and CV Reg |
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DEVELOPER MICROELECTRONICS |
PWM Control 3A Step-Down Converter |
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DEVELOPER MICROELECTRONICS |
Quasi-Resonant PSR CC/CV PWM Power Switch Low Cost Solution Built-in 750V power BJT Quasi-Resonant Primary Side Regulation (QR-PSR) Control with High Efficiency Multi-Mode PSR Control Fast Dynamic Response Built-in Dynamic Base Drive Audio Noise Free Operation ±4% CC and CV Reg |
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Developer Microelectronics |
N-Channel MOSFET |
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Developer Microelectronics |
N-Channel MOSFET Low gate charge Crss ( 16.9pF) Low Crss (typical 16.9pF ) Fast switching 100% avalanche tested dv/dt Improved dv/dt capabilit RoHS RoHS product DP10N60 N N-CHANNEL MOSFET Package ORDER MESSAGE Order codes DP10N60 Marking D |
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