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Dc Components |
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR p - Max 100 100 400 400 Unit V V V nA nA mV - Test Conditions IC=100µA, IE=0 IC=10mA, IB=0 IE=10µA, IC=0 VCB=25V, IE=0 VEB=3V, IC=0 IC=300mA, IB=30mA IC=50mA, VCE=1V Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Bas |
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Desde 2024. D4U Semiconductor.
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