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Dc Components |
NPN Transistor |
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Dc Components |
NPN Transistor FE2 fT Cob 380µs, Duty Cycle Min 60 50 5 50 135 150 2% Typ 0.1 - Max 0.1 0.1 0.3 600 600 4 Unit V V V µA µA V MHz pF Test Conditions IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=60V, IE=0 VEB=5V, IB=0 IC=100mA, IB=10mA IC=0.1mA, VCE=6V IC=1mA, |
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Dc Components |
NPN Transistor 5 0.55 90 250 2% Typ 200 3 Max 0.1 0.1 0.3 1 0.65 600 - Unit V V V µA µA V V V MHz pF Test Conditions IC=100µA, IE=0 IC=1mA, IB=0 IE=100µA, IC=0 VCB=60V, IE=0 VEB=5V, IC=0 IC=100mA, IB=10mA IC=100mA, IB=10mA IC=1mA, VCE=6V IC=1mA, VCE=6V IC=10mA, |
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Dc Components |
NPN Transistor Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width (1) (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BV |
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Dc Components |
NPN Transistor e BVCEO 30 Emitter-Base Breakdown Volatge BVEBO 5 Collector Cutoff Current ICBO - Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) IEBO VCE(sat) VBE(sat) - DC Current Gain(1) hFE1 hFE2 45 |
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Dc Components |
NPN EPITAXIAL PLANAR TRANSISTOR |
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Desde 2024. D4U Semiconductor.
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