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Dallas Semiconducotr |
Triple 128-Position Nonvolatile Digital Variable Resistor/Switch ♦ Three 20kΩ, 128-Position Linear Digital Resistors ♦ Resistor Settings are Stored in NV Memory ♦ Each Resistor has a High-Impedance Setting for Switch Operation to Control Digital Logic ♦ Low Temperature Coefficient ♦ 2-Wire Serial Interface ♦ 2.7V |
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Dallas Semiconducotr |
Serial Communications Module ♦ Communicates from PCs to ICs Through a Serial Port ♦ Fast Communication to 2-Wire Devices ♦ Eleven General-Purpose Digital I/O Pins, Including SDA and SCL ♦ Built-in Pullup Resistors for SDA and SCL Minimize Required External Hardware DS3900 Appl |
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Dallas Semiconducotr |
4-Channel Cold-Cathode Fluorescent Lamp Controller ♦ High-Density CCFL Controller for LCD TV and PC Monitor Backlights ♦ Can Be Easily Cascaded to Support More Than 4 Lamps ♦ Minimal External Components ♦ Analog Brightness Control ♦ Per-Channel Lamp Control Ensures Equal Brightness Among Lamps and Ma |
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Dallas Semiconducotr |
Chateau Channelized T1 And E1 And HDLC Controller |
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Dallas Semiconducotr |
Advanced NV SRAM Battery Cap Houses 400 mAh primary lithium battery Snaps directly onto a surface –mounted 40mm ball –grid array (BGA) Nonvolatile SRAM module Attaches after host BGA module has been surface –mounted to protect lithium battery from the high temperatures of reflow so |
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Dallas Semiconducotr |
Triple 128-Position Nonvolatile Digital Variable Resistor/Switch ♦ Three 20kΩ, 128-Position Linear Digital Resistors ♦ Resistor Settings are Stored in NV Memory ♦ Each Resistor has a High-Impedance Setting for Switch Operation to Control Digital Logic ♦ Low Temperature Coefficient ♦ 2-Wire Serial Interface ♦ 2.7V |
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Dallas Semiconducotr |
3.3V/ 32Mb Advanced NV SRAM with Clock § § § § 3.0V to 3.6V operation Surface-mount nonvolatile (NV) RAM ball-grid array (BGA) module construction 1024k x 32 NV SRAM memory space and separate 64 x 8 real-time clock (RTC) memory space RTC maintains hundredths of seconds, seconds, minutes, |
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Desde 2024. D4U Semiconductor.
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