No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Dallas Semiconducotr |
Triple 128-Position Nonvolatile Digital Variable Resistor/Switch ♦ Three 20kΩ, 128-Position Linear Digital Resistors ♦ Resistor Settings are Stored in NV Memory ♦ Each Resistor has a High-Impedance Setting for Switch Operation to Control Digital Logic ♦ Low Temperature Coefficient ♦ 2-Wire Serial Interface ♦ 2.7V |
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Dallas Semiconductor |
1024k Flexible NV SRAM SIMM Flexibly organized as 32k x 32, 64k x 16 or 128k x 8bits 10 years minimum data retention in the absence of external power Nonvolatile circuitry transparent to and independent from host system Automatic write protection circuitry safeguards against da |
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Dallas Semiconducotr |
Serial Communications Module ♦ Communicates from PCs to ICs Through a Serial Port ♦ Fast Communication to 2-Wire Devices ♦ Eleven General-Purpose Digital I/O Pins, Including SDA and SCL ♦ Built-in Pullup Resistors for SDA and SCL Minimize Required External Hardware DS3900 Appl |
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Dallas Semiconducotr |
4-Channel Cold-Cathode Fluorescent Lamp Controller ♦ High-Density CCFL Controller for LCD TV and PC Monitor Backlights ♦ Can Be Easily Cascaded to Support More Than 4 Lamps ♦ Minimal External Components ♦ Analog Brightness Control ♦ Per-Channel Lamp Control Ensures Equal Brightness Among Lamps and Ma |
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Dallas Semiconducotr |
Chateau Channelized T1 And E1 And HDLC Controller |
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Dallas Semiconducotr |
Advanced NV SRAM Battery Cap Houses 400 mAh primary lithium battery Snaps directly onto a surface –mounted 40mm ball –grid array (BGA) Nonvolatile SRAM module Attaches after host BGA module has been surface –mounted to protect lithium battery from the high temperatures of reflow so |
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Dallas Semiconducotr |
Triple 128-Position Nonvolatile Digital Variable Resistor/Switch ♦ Three 20kΩ, 128-Position Linear Digital Resistors ♦ Resistor Settings are Stored in NV Memory ♦ Each Resistor has a High-Impedance Setting for Switch Operation to Control Digital Logic ♦ Low Temperature Coefficient ♦ 2-Wire Serial Interface ♦ 2.7V |
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Dallas |
Single/Dual/Triple/Quad DS3/E3/STS-1 LIUs Single, Dual, Triple, or Quad Integrated Transmitter, Receiver, and Jitter Attenuators for DS3, E3, and STS-1 Each Port Independently Configurable Perform Receive Clock/Data Recovery and Transmit Waveshaping Hardware |
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Dallas Semiconductor |
Stratum 3/3E Timing Card IC Synchronization Subsystem for Stratum 3E, 3, 4E, and 4, SMC and SEC - Meets Requirements of GR-1244 Stratum 3/3E, GR-253, G.812 Types I, III, and IV, and G.813 - Stratum 3E Holdover Accuracy with Suitable External Oscillator - Programmable Bandwidth, |
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Dallas Semiconductor |
Advanced NV SRAM Battery § § § Houses 380mAh primary lithium batteries Snaps directly onto a surface-mounted 40mm ball-grid array (BGA) nonvolatile (NV) SRAM module Attaches after host BGA module has been surface-mounted to protect lithium battery from the high temperatures |
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Dallas Semiconducotr |
3.3V/ 32Mb Advanced NV SRAM with Clock § § § § 3.0V to 3.6V operation Surface-mount nonvolatile (NV) RAM ball-grid array (BGA) module construction 1024k x 32 NV SRAM memory space and separate 64 x 8 real-time clock (RTC) memory space RTC maintains hundredths of seconds, seconds, minutes, |
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