| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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DP |
Single-stage linear LED driver chip |
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Dongchen |
discharge tube |
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Fairchild Semiconductor |
N-Channel MOSFET • r DS(ON) = 4.3mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 61nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82575 Applications • |
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Dongchen |
discharge tube |
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ON Semiconductor |
N-Channel MOSFET Applications • RDS(on) = 3.5 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A • QG(tot) = 96 nC ( Typ.) @ VGS = 10 V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 82584 • Synchronous Re |
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SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-220F Package. D G D S G D S G SDP SERIES TO-220 SDF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM E AS PD |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A • Fast Switching • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET i |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 2.85 mΩ (Typ.) @ VGS = 10 V, ID = 50 A • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr • Soft Reverse-Recovery Body Diode • Enables High Efficiency in Synchronous Rectification • Fast Switching Speed • 100% UIL Tested • RoHS Com |
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Diodes |
DUAL PNP SURFACE MOUNT TRANSISTOR • Epitaxial Planar Die Construction • Ideally Suited for Automated Assembly Processes • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) • Ultra Small Package Mechanical Data • • • • • • • SOT-963 Case: SOT-963 Case Material: |
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Diodes |
DUAL PNP SURFACE MOUNT TRANSISTOR • Epitaxial Planar Die Construction • Ideally Suited for Automated Assembly Processes • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) • Ultra Small Package Mechanical Data • • • • • • • SOT-963 Case: SOT-963 Case Material: |
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Fairchild Semiconductor |
N-Channel PowerTrench MOSFET • RDS(on) = 2.21 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr = 112 nC • Soft Reverse-Recovery Body Diode • Enables High Efficiency in Synchronous Rectification • Fast Switching Speed • 100% UIL Tested |
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INCHANGE |
Ultrafast Rectifier ·With TO-220 packaging ·Metal silicon junction, majority carrier conduction ·Low power loss, high efficiency ·Guardring for overvoltage protection ·High surge capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operat |
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Fairchild Semiconductor |
N-Channel MOSFET • r DS(ON) = 3.5mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 95nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82584 Applications • |
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Littelfuse |
SIDACtor Protection Thyristors & Benefits t%JGGFSFOUJBMQSPUFDUJPO t-PXJOTFSUJPOMPTT t-PXDBQBDJUBODF t-PXQSPmMF t4NBMMYNNGPPUQSJOU t%FTJHOFEGPS7MJOF drivers t"TTVSHFSBUJOH Applicable Global Standards t5*"" t5*"# t*56, |
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Daico Industries |
PHASE SHIFTER |
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DAICO |
3 Section Phase Shifter / Amplifier/ Switch 1300 - 1700 MHz 45° LSB, 315° Range ±1.0 dB Balance between Outputs +20 dBm Output Compression Molybdenum Case for Heat Transfer Integrated GaAs FET Amplifiers, MMIC SPST Blanking Switch, Passive Power Divider, 3 Section Phase Shifter, and TTL and EC |
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DAICO |
GAAS 1 SECTION PHASE SHIFTER -154 180 ±3 1.3/1 100 µA µA dB dB DEG DEG DEG DEG OHMS nSec nSec mV dBm dBm dBm dBm °C In T/F 200C2437 At Fc 180 1.2 0.4 1.0 0 100 400 1000 3000 VSWR Impedance Switching Speed Transition (Rise/Fall) Time Switching (Video) Transients Intercept |
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Infineon Technologies |
Fast Switching EmCon Diode • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage www.DataSheet4U.net Product Summary VRRM IF VF T jmax P-TO220-3.SMD 1200 4 1.65 150 P-TO220-2-2. V A V °C • Easy paralleling Type IDP0 |
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Infineon Technologies |
Fast Switching EmCon Diode • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage www.DataSheet4U.net Product Summary VRRM IF VF T jmax P-TO220-3.SMD 600 6 1.5 175 P-TO220-2-2. V A V °C • 175°C operating temperature • |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 4.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET |
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Desde 2024. D4U Semiconductor.
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