| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Naina Semiconductor |
Fast Recovery Diodes • Diffused Series • Industrial grade • Excellent surge capabilities • Available in Normal and Reverse polarity • Optional Avalanche Characteristic 135NSF(R) Electrical Specifications (TA = 250C, unless otherwise noted) Symbol Parameters Values |
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Naina Semiconductor |
Fast Recovery Diodes • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Optional Avalanche Characteristic Electrical Specifications (TE = 250C, unless otherwise noted) Symbol Parameters Values Units IF(AV) Maximum avg. forward current |
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Diodes Incorporated |
1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER · · · · · · · Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Reverse Leakage Current Plastic Material: UL Flammab |
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SEMTECH |
SUPER FAST RECOVERY SILICON DIODES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. • Void free moulded plastic technique • Fast switching for high efficiency • High forward surge current capability • High temperature soldering:250℃/10s, 0.375”(9.5mm) l |
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Naina Semiconductor |
Fast Recovery Diodes • Diffused Series • Industrial grade • Excellent surge capabilities • Available in Normal and Reverse polarity • Optional Avalanche Characteristic 135NSF(R) Electrical Specifications (TA = 250C, unless otherwise noted) Symbol Parameters Values |
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Naina Semiconductor |
Fast Recovery Diodes • Diffused Series • Industrial grade • Excellent surge capabilities • Available in Normal and Reverse polarity • Optional Avalanche Characteristic 135NSF(R) Electrical Specifications (TA = 250C, unless otherwise noted) Symbol Parameters Values |
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Naina Semiconductor |
Fast Recovery Diodes • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Optional Avalanche Characteristic Electrical Specifications (TE = 250C, unless otherwise noted) Symbol Parameters Values Units IF(AV) Maximum avg. forward current |
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Diodes Incorporated |
1.0A SUPER-FAST GLASS PASSIVATED RECTIFIER · · · · · · · Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Reverse Leakage Current Plastic Material: UL Flammab |
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EIC discrete |
SUPER FAST RECTIFIER DIODES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Super fast recovery time SUPER FAST RECTIFIER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0. |
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Thinki Semiconductor |
(SF1601G - SF1608G) 16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diodes Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Unit : inch (mm) .196(5.00) .163(4.16) .054(1.39) .045(1.15) .269(6.85) .226(5.75) .624(15.87) |
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Thinki Semiconductor |
(SF1601G - SF1608G) 16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diodes Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Unit : inch (mm) .196(5.00) .163(4.16) .054(1.39) .045(1.15) .269(6.85) .226(5.75) .624(15.87) |
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Thinki Semiconductor |
(SF1601GA - SF1608GA) 16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diodes Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Unit : inch (mm) .196(5.00) .163(4.16) .054(1.39) .045(1.15) .269(6.85) .226(5.75) .624(15.87) |
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Thinki Semiconductor |
(SF1601GA - SF1608GA) 16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diodes Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Unit : inch (mm) .196(5.00) .163(4.16) .054(1.39) .045(1.15) .269(6.85) .226(5.75) .624(15.87) |
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Thinki Semiconductor |
(SF1601GD - SF1608GD) 16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diodes Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Unit : inch (mm) .196(5.00) .163(4.16) .054(1.39) .045(1.15) .269(6.85) .226(5.75) .624(15.87) |
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Shindengen |
Fast Recovery Diodes ・Full Molded ・High Voltage ・Low Noise ・Dielectric Strength 2kV ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): FTO-220AG Package (JEITA Code): SC-91 Equivalent circuit Absolute Maximum Ratings (unless otherwise specified : Tc=25℃) Item |
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Naina Semiconductor |
Fast Recovery Diodes • Diffused Series • Industrial grade • Excellent surge capabilities • Available in Normal and Reverse polarity • Optional Avalanche Characteristic 140NSF(R) Electrical Specifications (TA = 250C, unless otherwise noted) Symbol Parameters Values |
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Naina Semiconductor |
Fast Recovery Diodes • Diffused Series • Industrial grade • Excellent surge capabilities • Available in Normal and Reverse polarity • Optional Avalanche Characteristic 140NSF(R) Electrical Specifications (TA = 250C, unless otherwise noted) Symbol Parameters Values |
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Naina Semiconductor |
Fast Recovery Diodes • Diffused Series • Industrial grade • Excellent surge capabilities • Available in Normal and Reverse polarity • Optional Avalanche Characteristic 140NSF(R) Electrical Specifications (TA = 250C, unless otherwise noted) Symbol Parameters Values |
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Naina Semiconductor |
Fast Recovery Diodes • Diffused Series • Industrial grade • Excellent surge capabilities • Available in Normal and Reverse polarity • Optional Avalanche Characteristic 135NSF(R) Electrical Specifications (TA = 250C, unless otherwise noted) Symbol Parameters Values |
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Naina Semiconductor |
Fast Recovery Diodes • Diffused Series • Industrial grade • Excellent surge capabilities • Available in Normal and Reverse polarity • Optional Avalanche Characteristic 135NSF(R) Electrical Specifications (TA = 250C, unless otherwise noted) Symbol Parameters Values |
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Desde 2024. D4U Semiconductor.
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