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DGME |
N-CHANNEL ENHANCEMENT MODE MOSFET |
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DGME |
N-CHANNEL ENHANCEMENT MODE MOSFET |
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DGME |
N-CHANNEL ENHANCEMENT MODE MOSFET |
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DGME |
N-CHANNEL ENHANCEMENT MODE MOSFET |
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DGME |
N-CHANNEL ENHANCEMENT MODE MOSFET |
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DGME |
N-CHANNEL ENHANCEMENT MODE MOSFET issipation Derating Factor AboPvDe(D2F5) ℃ TO-220/TO-262 TO-220F Operating and Storage Temperature Range Maximum Temperature for Soldering TJ，TSTG TL Value 600 7* 4.0* 25 ±30 400 7.0 14.5 4.5 147 48 1.18 0.38 150，-55～+150 300 Unit V A A V m |
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Desde 2024. D4U Semiconductor.
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