DEVELOPER MICROELECTRONICS DP1 Hoja de datos

No.	parte #	Fabricante	Descripción
1	DP1801B	DEVELOPER MICROELECTRONICS	Quasi-Resonant PSR CC/CV PWM Power Switch  Low Cost Solution Built-in 800V power BJT  Quasi-Resonant Primary Side Regulation (QR-PSR) Control with High Efficiency  Multi-Mode PSR Control  Fast Dynamic Response  Built-in Dynamic Base Drive  Audio Noise Free Operation  ±4% CC and CV Reg
2	DP1800	DEVELOPER MICROELECTRONICS	Quasi-Resonant PSR CC/CV PWM Power Switch  Low Cost Solution Built-in 800V power BJT  Quasi-Resonant Primary Side Regulation (QR-PSR) Control with High Efficiency  Multi-Mode PSR Control  Fast Dynamic Response  Built-in Dynamic Base Drive  Audio Noise Free Operation  ±4% CC and CV Reg
3	DP1803	DEVELOPER MICROELECTRONICS	Quasi-Resonant PSR CC/CV PWM Power Switch  Low Cost Solution Built-in 800V power BJT  Quasi-Resonant Primary Side Regulation (QR-PSR) Control with High Efficiency  Multi-Mode PSR Control  Fast Dynamic Response  Built-in Dynamic Base Drive  Audio Noise Free Operation  ±4% CC and CV Reg
4	DP1510	DEVELOPER MICROELECTRONICS	PWM Control 3A Step-Down Converter
5	DP1804	DEVELOPER MICROELECTRONICS	Quasi-Resonant PSR CC/CV PWM Power Switch  Low Cost Solution Built-in 750V power BJT  Quasi-Resonant Primary Side Regulation (QR-PSR) Control with High Efficiency  Multi-Mode PSR Control  Fast Dynamic Response  Built-in Dynamic Base Drive  Audio Noise Free Operation  ±4% CC and CV Reg
6	DP170N03	Developer Microelectronics	N-Channel MOSFET
7	DP10N60	Developer Microelectronics	N-Channel MOSFET  Low gate charge  Crss ( 16.9pF) Low Crss (typical 16.9pF )  Fast switching  100% avalanche tested  dv/dt Improved dv/dt capabilit  RoHS RoHS product DP10N60 N N-CHANNEL MOSFET Package ORDER MESSAGE Order codes DP10N60 Marking D