| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
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DEE |
Diode * International standard package * Direct copper bonded Al2O3-ceramic base plate * Planar passivated chips * Isolation voltage 3600 V~ * UL registered, E 72873 APPLICATIONS www.DataSheet.net/ ADVANTAGES * Space and weight savings * Simple mounting |
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DEE |
Diode * International standard package * Direct copper bonded Al2O3-ceramic base plate * Planar passivated chips * Isolation voltage 3600 V~ * UL registered, E 72873 APPLICATIONS www.DataSheet.net/ ADVANTAGES * Space and weight savings * Simple mounting |
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DEE |
Diode * International standard package * Direct copper bonded Al2O3-ceramic base plate * Planar passivated chips * Isolation voltage 3600 V~ * UL registered, E 72873 APPLICATIONS www.DataSheet.net/ ADVANTAGES * Space and weight savings * Simple mounting |
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|
DEE |
Diode * International standard package * Direct copper bonded Al2O3-ceramic base plate * Planar passivated chips * Isolation voltage 3600 V~ * UL registered, E 72873 APPLICATIONS www.DataSheet.net/ ADVANTAGES * Space and weight savings * Simple mounting |
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|
DEE |
Diode * International standard package * Direct copper bonded Al2O3-ceramic base plate * Planar passivated chips * Isolation voltage 3600 V~ * UL registered, E 72873 APPLICATIONS www.DataSheet.net/ ADVANTAGES * Space and weight savings * Simple mounting |
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|
DEE |
Diode * International standard package * Direct copper bonded Al2O3-ceramic base plate * Planar passivated chips * Isolation voltage 3600 V~ * UL registered, E 72873 APPLICATIONS www.DataSheet.net/ ADVANTAGES * Space and weight savings * Simple mounting |
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Desde 2024. D4U Semiconductor.
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