| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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DC COMPONENTS |
TRANSIENT VOLTAGE SUPPRESSOR * Glass passivated junction * 500 Watts Peak Pulse Power capability on 10/1000 µs waveform * Excellent clamping capability * Low zener impedance * Fast response time DO-15 MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-0 rate flame retardan |
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DC COMPONENTS |
PNP Transistor kdown Voltage BVCEO -30 Emitter-Base Breakdown Volatge BVEBO -5 Collector Cutoff Current ICBO - Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) IEBO VCE(sat) VBE(sat) - DC Current Gain(1) |
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DC COMPONENTS |
TRANSIENT VOLTAGE SUPPRESSOR * Glass passivated junction * 500 Watts Peak Pulse Power capability on 10/1000 µs waveform * Excellent clamping capability * Low zener impedance * Fast response time DO-15 MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-0 rate flame retardan |
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DC COMPONENTS |
TRANSIENT VOLTAGE SUPPRESSOR * Glass passivated junction * 500 Watts Peak Pulse Power capability on 10/1000 µs waveform * Excellent clamping capability * Low zener impedance * Fast response time DO-15 MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-0 rate flame retardan |
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DC COMPONENTS |
TRANSIENT VOLTAGE SUPPRESSOR * Glass passivated junction * 500 Watts Peak Pulse Power capability on 10/1000 µs waveform * Excellent clamping capability * Low zener impedance * Fast response time DO-15 MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-0 rate flame retardan |
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Dc Components |
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR BVCBO BVCEO BVEBO ICEO IEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 fT 380µs, Duty Cycle Min -300 -300 -5 80 80 40 50 2% Typ -0.15 - Max -5 -0.1 -0.7 -0.9 -1 - Unit V V V µA µA V V V V MHz Test Conditions IC=-100µA, IE=0 IC=-1mA, |
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Desde 2024. D4U Semiconductor.
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