| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Cystech Electonics Corp |
PNP Transistor • Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A • Excellent current gain characteristics • Complementary to BTD882I3 • RoHS compliant package BVCEO IC RCESAT -30V -3A 150mΩ Symbol BTB772I3 Outline TO-251 B：Base C：Collector E：Emitter B |
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Cystech Electonics Corp |
PNP Transistor • Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.1A • Excellent current gain characteristics • Complementary to BTD882SA3 • Pb-free package Symbol BTB772SA3 Outline TO-92 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) P |
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Cystech Electonics Corp |
PNP Transistor • Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.2A • Excellent current gain characteristics • Complementary to BTD882T3/S • Pb-free package is available Equivalent Circuit BTB772T3/S Outline TO-126 B：Base C：Collector E：Emitter E C B Absolu |
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Cystech Electonics Corp |
PNP Transistor • Low VCE(sat), VCE(sat)=-0.15V (typical), at IC / IB =- 0.5A /- 50mA • Complementary to BTD1664M3 Symbol BTB1132M3 Outline SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-E |
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Cystech Electonics Corp |
PNP Transistor • Low VCE(sat), VCE(sat)=-0.7 V (typical), at IC / IB = -2A / -0.5A • Excellent current gain characteristics • Complementary to BTD1758J3 Symbol BTB1182J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Param |
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Cystech Electonics Corp |
PNP Transistor • Low VCE(sat) • Excellent current gain characteristics • Complementary to BTD1760J3 • RoHS compliant package BVCEO IC RCESAT -50V -3A 130mΩ Symbol BTB1184J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) |
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Cystech Electonics Corp |
PNP Transistor • Low VCE(sat), VCE(sat)=-0.45 V (typical), at IC / IB = -2A / -0.5A • Excellent current gain characteristics • Complementary to BTD1766M3 • Pb-free package Symbol BTB1188M3 Outline SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Rati |
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Cystech Electonics Corp |
PNP Transistor • Low VCE(SAT) , VCE(SAT)≤ -0.3V (IC / IB=-1A/-100mA) • Large collector current, IC=-1A • Complementary to BTD1781N3. • Pb-free package Symbol BTB1197N3 Outline SOT-23 B：Base C：Collector E：Emitter BTB1197N3 CYStek Product Specification CYStech |
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Cystech Electonics Corp |
PNP Transistor • Low VCE(SAT), VCE(SAT)= -0.16V (Typ.) @ IC/IB=-500mA/-50mA • High breakdown voltage, BVCEO=-80V • Complementary to BTD1782N3 • Pb-free package Symbol BTB1198N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Param |
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Cystech Electonics Corp |
PNP Transistor • Low VCE(sat), VCE(sat)=-0.38 V (typical), at IC / IB = -3A / -60mA • Excellent DC current gain characteristics • Fast switching speed • Large current capacity • RoHS compliant package BVCEO IC RCESAT -20V -5A 127mΩ typ. Applications • Strobe, vo |
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Cystech Electonics Corp |
PNP Transistor • 4 Amps continuous current, up to 10 Amps peak current • Very low saturation voltage • Excellent gain characteristics specified up to 3 Amps • Extremely low equivalent on resistance, RCE(SAT)=90mΩ at 3A • RoHS compliant package BVCEO IC RCE(SAT) - |
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Cystech Electonics Corp |
PNP Transistor : Page No. : 2/4 Test Conditions IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-160V, IE=0 VEB=-4V, IC=0 IC=-1A, IB=-100mA VCE=-5V, IC=-150mA VCE=-5V, IC=-100mA VCE=-5V, IC=-500mA VCE=-5V, IC=-150mA VCB=-10V, IE=0, f=1MHz *Pulse Test: Pulse Width |
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Cystech Electonics Corp |
PNP Transistor mA, IB=0 IE=-50µA, IC=0 VCB=-160V, IE=0 VEB=-4V, IC=0 IC=-1A, IB=-100mA VCE=-5V, IC=-150mA VCE=-5V, IC=-100mA VCE=-5V, IC=-500mA VCE=-5V, IC=-150mA VCB=-10V, IE=0, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification of hFE 1 Rank Ra |
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Cystech Electonics Corp |
PNP Transistor stics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) hFE1 hFE2 fT Cob Min. -180 -160 -5 60 30 Typ. 140 27 Max. -1 -1 -0.6 -1.5 200 Unit V V V µA µA V V MHz pF www.DataSheet4U.com Spec. No. : C854M3 Issued Date : 2004.08.20 Revised |
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Cystech Electonics Corp |
PNP Transistor C854T3 Issued Date : 2005.08.23 Revised Date :2006.07.11 Page No. : 2/4 Test Conditions IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-160V, IE=0 VEB=-4V, IC=0 IC=-1A, IB=-100mA VCE=-5V, IC=-150mA VCE=-5V, IC=-100mA VCE=-5V, IC=-500mA VCE=-5V, IC |
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Cystech Electonics Corp |
PNP Transistor • Low VCE(sat), VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A • Excellent DC current gain characteristics Symbol BTB1427M3 Outline SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltag |
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Cystech Electonics Corp |
PNP Transistor Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down ra |
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Cystech Electonics Corp |
PNP Transistor • Low VCE(sat), typically -0.3 V at IC / IB = -2A / -0.2A • Excellent current gain characteristics • Complementary to BTD882AM3 Symbol BTB772AM3 Outline SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Colle |
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Cystech Electonics Corp |
PNP Transistor • Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.2A • Excellent current gain characteristics • Complementary to BTD882T3/S • Pb-free package is available Equivalent Circuit BTB772T3/S Outline TO-126 B：Base C：Collector E：Emitter E C B Absolu |
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Desde 2024. D4U Semiconductor.
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