| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Cystech Electonics |
Low VCE(sat) PNP Epitaxial Planar Transistor • Excellent DC current gain characteristics • Low Saturation Voltage VCE(sat)=-0.3V(typ)(IC=-2A, IB=-100mA). • Complementary to BTD2150N3 • Pb-free package Symbol BTB1424N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta= |
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Cystech Electonics |
Low Vcesat PNP Epitaxial Planar Transistor • Low VCE(sat), VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A • Excellent DC current gain characteristics • Complementary to BTD2118J3 Symbol BTB1412J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Pa |
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Cystech Electonics Corp |
PNP Transistor • Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A • Excellent current gain characteristics • Complementary to BTD882I3 • RoHS compliant package BVCEO IC RCESAT -30V -3A 150mΩ Symbol BTB772I3 Outline TO-251 B：Base C：Collector E：Emitter B |
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Cystech Electonics Corp |
PNP Transistor • Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.1A • Excellent current gain characteristics • Complementary to BTD882SA3 • Pb-free package Symbol BTB772SA3 Outline TO-92 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) P |
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Cystech Electonics Corp |
PNP Transistor • Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.2A • Excellent current gain characteristics • Complementary to BTD882T3/S • Pb-free package is available Equivalent Circuit BTB772T3/S Outline TO-126 B：Base C：Collector E：Emitter E C B Absolu |
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Cystech Electonics |
PNP Epitaxial Planar Transistor |
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Cystech Electonics |
Silicon PNP Epitaxial Planar Transistor 3 Issued Date : 2004.07.28 Revised Date : Page No. : 2/4 Test Conditions IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-160V, IE=0 VEB=-4V, IC=0 IC=-1A, IB=-100mA VCE=-5V, IC=-150mA VCE=-5V, IC=-100mA VCE=-5V, IC=-500mA VCE=-5V, IC=-150mA VCB=-10V |
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Cystech Electonics |
Low VCE(sat) PNP Epitaxial Planar Transistor • Excellent DC current gain characteristics • Low Saturation Voltage, VCE(sat)=-0.3V(typ) @IC=-2A, IB=-100mA. • Complementary to BTD2150AD3 • Pb-free package Symbol BTB1424AD3 Outline TO-126ML B：Base C：Collector E：Emitter EC B Absolute Maximum Ra |
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Cystech Electonics |
Low VCE(sat) PNP Epitaxial Planar Transistor • Excellent DC current gain characteristics • Low Saturation Voltage, VCE(sat)=-0.3V(typ) @IC=-2A, IB=-100mA. • Complementary to BTD2150AM3 • Pb-free package Symbol BTB1424AM3 Outline SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ra |
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Cystech Electonics |
Low VCE(sat) PNP Epitaxial Planar Transistor • Excellent DC current gain characteristics • Low Saturation Voltage VCE(sat)=-0.4V(typ) (IC=-2A, IB=-100mA). •Complementary to BTD2150L3 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Volt |
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Cystech Electonics |
Low VCE(sat) PNP Epitaxial Planar Transistor • Low VCE(sat), typically -0.3 V at IC / IB = -2A / -0.2A • Excellent current gain characteristics • Complementary to BTD2150LN3 Symbol BTB1424LN3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector- |
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Cystech Electonics |
Low VCE(SAT) PNP Epitaxial Planar Transistor Symbol BTB1426A3 Outline TO-92 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed)(Note 1) Power Diss |
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Cystech Electonics Corp |
PNP Transistor • Low VCE(sat), VCE(sat)=-0.15V (typical), at IC / IB =- 0.5A /- 50mA • Complementary to BTD1664M3 Symbol BTB1132M3 Outline SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-E |
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Cystech Electonics Corp |
PNP Transistor • Low VCE(sat), VCE(sat)=-0.7 V (typical), at IC / IB = -2A / -0.5A • Excellent current gain characteristics • Complementary to BTD1758J3 Symbol BTB1182J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Param |
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Cystech Electonics Corp |
PNP Transistor • Low VCE(sat) • Excellent current gain characteristics • Complementary to BTD1760J3 • RoHS compliant package BVCEO IC RCESAT -50V -3A 130mΩ Symbol BTB1184J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) |
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Cystech Electonics Corp |
PNP Transistor • Low VCE(sat), VCE(sat)=-0.45 V (typical), at IC / IB = -2A / -0.5A • Excellent current gain characteristics • Complementary to BTD1766M3 • Pb-free package Symbol BTB1188M3 Outline SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Rati |
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Cystech Electonics Corp |
PNP Transistor • Low VCE(SAT) , VCE(SAT)≤ -0.3V (IC / IB=-1A/-100mA) • Large collector current, IC=-1A • Complementary to BTD1781N3. • Pb-free package Symbol BTB1197N3 Outline SOT-23 B：Base C：Collector E：Emitter BTB1197N3 CYStek Product Specification CYStech |
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Cystech Electonics Corp |
PNP Transistor • Low VCE(SAT), VCE(SAT)= -0.16V (Typ.) @ IC/IB=-500mA/-50mA • High breakdown voltage, BVCEO=-80V • Complementary to BTD1782N3 • Pb-free package Symbol BTB1198N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Param |
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Cystech Electonics Corp |
PNP Transistor • Low VCE(sat), VCE(sat)=-0.38 V (typical), at IC / IB = -3A / -60mA • Excellent DC current gain characteristics • Fast switching speed • Large current capacity • RoHS compliant package BVCEO IC RCESAT -20V -5A 127mΩ typ. Applications • Strobe, vo |
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Cystech Electonics Corp |
PNP Transistor • 4 Amps continuous current, up to 10 Amps peak current • Very low saturation voltage • Excellent gain characteristics specified up to 3 Amps • Extremely low equivalent on resistance, RCE(SAT)=90mΩ at 3A • RoHS compliant package BVCEO IC RCE(SAT) - |
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Desde 2024. D4U Semiconductor.
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