| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Cypress Semiconductor |
16-Kbit (2K x 8) Serial (SPI) F-RAM ■ 16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability f |
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Cypress Semiconductor |
4-Kbit (512 x 8) Serial (I2C) F-RAM ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See Data Retention and Endurance on page 10) ❐ NoDelay™ writes ❐ Advanced high-reliability |
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Cypress Semiconductor |
4-Mbit (512K x 8) Serial (SPI) F-RAM ■ 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512 K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 10-year data retention ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Very fast serial peri |
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Cypress Semiconductor |
128-Kbit (16K x 8) Serial (SPI) F-RAM ■ 128-Kbit ferroelectric random access memory (F-RAM) logically organized as 16K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability |
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Cypress Semiconductor |
1-Mbit (64 K x 16) F-RAM Memory ■ ■ ■ ■ ■ Low-voltage operation: VDD = 2.0 V to 3.6 V Industrial temperature: –40 C to +85 C 44-pin thin small outline package (TSOP) Type II Restriction of hazardous substances (RoHS) compliant 1-Mbit ferroelectric random access memory (F-RAM) |
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Cypress Semiconductor |
4-Kbit (512 x 8) Serial (SPI) F-RAM ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability f |
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Cypress Semiconductor |
2-Mbit (256 K x 8) Serial (SPI) F-RAM ■ 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 8 ❐ High-endurance 10 trillion (1014) read/writes ❐ 121-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability |
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Cypress Semiconductor |
256-Kbit (32K x 8) Serial (SPI) F-RAM ■ 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability |
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Cypress Semiconductor |
64-Kbit (8 K x 8) Serial (SPI) Automotive F-RAM ■ 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8 ❐ High-endurance 10 trillion (1013) read/writes ❐ 121-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability f |
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Cypress Semiconductor |
64-Kbit (8 K x 8) Serial (SPI) Automotive F-RAM ■ 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8 ❐ High-endurance 10 trillion (1013) read/writes ❐ 121-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability f |
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Cypress Semiconductor |
512-Kbit (64 K x 8) Serial (I2C) F-RAM ■ 512-Kbit ferroelectric random access memory (F-RAM) logically organized as 64 K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliabilit |
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Cypress Semiconductor |
4-Mbit (256K x 16) F-RAM Memory ■ 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K × 16 ❐ Configurable as 512K × 8 using UB and LB ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (see the Data Retention and Endurance table) ❐ |
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Cypress Semiconductor |
16-Kbit (2K x 8) Serial (I2C) F-RAM ■ 16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability f |
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Cypress Semiconductor |
2-Mbit (128 K x 16) F-RAM Memory ■ 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 16 ❐ Configurable as 256 K × 8 using UB and LB ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (see the Data Retention and Endurance table) |
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Cypress Semiconductor |
256-Kbit (32 K x 8) F-RAM Memory ■ 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (see the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Page mode operation ❐ Ad |
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Cypress Semiconductor |
2-Mbit (256 K ?? 8) Serial (SPI) F-RAM ■ 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability |
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Cypress Semiconductor |
4-Kbit (512 x 8) Serial (SPI) Automotive F-RAM ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ❐ High-endurance 10 trillion (1013) read/writes ❐ 121-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability fe |
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Cypress Semiconductor |
16-Kbit (2K x 8) Serial (SPI) Automotive F-RAM ■ 16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2 K × 8 ❐ High-endurance 10 trillion (1013) read/writes ❐ 121-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability f |
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Cypress Semiconductor |
16-Kbit (2K x 8) Serial (I2C) F-RAM ■ 16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability f |
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Cypress Semiconductor |
64-Kbit (8K x 8) Serial (I2C) F-RAM ■ 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability f |
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Desde 2024. D4U Semiconductor.
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