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Continental Device India Limited |
PNP PLASTIC POWER TRANSISTORS 0 V 120 V Continental Device India Limited Data Sheet Page 1 of 3 www.DataSheet4U.com CSB631, CSB631K CSD600, CSD600K Emitter-base voltage (open collector) Collector current Collector current (peak) Total power dissipation up to TA = 25°C Total |
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Continental Device India Limited |
PNP PLASTIC POWER TRANSISTORS 0 V 120 V Continental Device India Limited Data Sheet Page 1 of 3 www.DataSheet4U.com CSB631, CSB631K CSD600, CSD600K Emitter-base voltage (open collector) Collector current Collector current (peak) Total power dissipation up to TA = 25°C Total |
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Continental Device India Limited |
NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR ob VCB=10V, IE=0 f=1MHz 25 pF VALUE 100 100 6.0 2.0 3.0 1.2 10 150 -55 to +150 UNIT V V V A A W W deg C deg C MIN 100 100 1.0 TYP - MAX 10 3.0 1.5 10 UNIT V V uA mA V K Continental Device India Limited Data Sheet Page 1 of 2 TO-126 (SOT-32) P |
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Continental Device India Limited |
NPN SILICON EPITAXIAL POWER TRANSISTOR A, VCE=10V IC=0.3A, VCE=10V MIN 100 60 5 70 TYP 0.75 20 MAX 5 240 2.0 1.5 UNIT V V V mA V V V MHz Classification hFE O 70 - 140 Y 120 - 240 Continental Device India Limited Data Sheet 1 of 3 CSD73 TO - 220 Plastic Package TO-220 Plastic Packag |
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Continental Device India Limited |
NPN EPITAXIAL PLANAR SILICON TRANSISTOR (Sat) IC=1A, IB=0.1A Collector Emitter Saturation Voltage Dynamic Characteristics ft VCE=2V, IC=10mA, Transition Frequency Cob VCB=10V, IE=0 Collector Output Capacitance f=1MHz hFE* Classification : A 100-240; B 200-400; C 350-500 UNIT V V V A W deg |
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Continental Device India Limited |
PNP EPITAXIAL PLANAR SILICON TRANSISTOR =4V, IE=0 50 IEBO VEB=4V, IC=0 50 Emitter Cut off Current hFE IC=100uA,VCE=1V CMBT200 80 DC Current Gain CMBT200A 240 IC=10mA,VCE=1V CMBT200 CMBT200A CMBT200A CMBT200 CMBT200A 100 300 100 100 100 450 600 350 - UNIT V V V mA mW mW/deg C deg C deg C/ |
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Continental Device India Limited |
NPN SILICON EPITAXIAL TRANSISTOR ft VCE=2V,IC=100mA, Transition Frequency Cob VCB=10V, IE=0 Collector Output Capacitance f=1MHz SWITCHING TIMES ton VCC=10V,IC=100mA Turn on time tstg IB1=IB2=10mA, Storage time tf VBE(off)2=3V Fall time hFE(1) * CLASSIFICATION Y: 135-270 G: 200-400 |
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Continental Device India Limited |
SURFACE MOUNT ZENER DIODES 1 550 1.0 5Z1 CZ1W 5.1 5.2 - 6.0 45 5.0 10 2.0 0.03 600 1.0 5Z6 CZ1W 5.6 5.8 - 6.6 41 2.0 10 3.0 0.04 700 1.0 6Z2 CZ1W 6.2 6.4 - 7.2 37 3.5 10 4.0 0.05 700 1.0 6Z8 CZ1W 6.8 7.0 - 7.9 34 4.0 10 5.0 0.05 700 0.5 7Z5 CZ1W 7.5 7.7 - 8.7 31 4.5 10 6.0 0.0 |
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Continental Device India Limited |
SURFACE MOUNT ZENER DIODES 1 550 1.0 5Z1 CZ1W 5.1 5.2 - 6.0 45 5.0 10 2.0 0.03 600 1.0 5Z6 CZ1W 5.6 5.8 - 6.6 41 2.0 10 3.0 0.04 700 1.0 6Z2 CZ1W 6.2 6.4 - 7.2 37 3.5 10 4.0 0.05 700 1.0 6Z8 CZ1W 6.8 7.0 - 7.9 34 4.0 10 5.0 0.05 700 0.5 7Z5 CZ1W 7.5 7.7 - 8.7 31 4.5 10 6.0 0.0 |
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Continental Device India Limited |
SURFACE MOUNT ZENER DIODES 1 550 1.0 5Z1 CZ1W 5.1 5.2 - 6.0 45 5.0 10 2.0 0.03 600 1.0 5Z6 CZ1W 5.6 5.8 - 6.6 41 2.0 10 3.0 0.04 700 1.0 6Z2 CZ1W 6.2 6.4 - 7.2 37 3.5 10 4.0 0.05 700 1.0 6Z8 CZ1W 6.8 7.0 - 7.9 34 4.0 10 5.0 0.05 700 0.5 7Z5 CZ1W 7.5 7.7 - 8.7 31 4.5 10 6.0 0.0 |
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Continental Device India Limited |
SURFACE MOUNT ZENER DIODES 1 550 1.0 5Z1 CZ1W 5.1 5.2 - 6.0 45 5.0 10 2.0 0.03 600 1.0 5Z6 CZ1W 5.6 5.8 - 6.6 41 2.0 10 3.0 0.04 700 1.0 6Z2 CZ1W 6.2 6.4 - 7.2 37 3.5 10 4.0 0.05 700 1.0 6Z8 CZ1W 6.8 7.0 - 7.9 34 4.0 10 5.0 0.05 700 0.5 7Z5 CZ1W 7.5 7.7 - 8.7 31 4.5 10 6.0 0.0 |
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Continental Device India Limited |
SURFACE MOUNT ZENER DIODES 1 550 1.0 5Z1 CZ1W 5.1 5.2 - 6.0 45 5.0 10 2.0 0.03 600 1.0 5Z6 CZ1W 5.6 5.8 - 6.6 41 2.0 10 3.0 0.04 700 1.0 6Z2 CZ1W 6.2 6.4 - 7.2 37 3.5 10 4.0 0.05 700 1.0 6Z8 CZ1W 6.8 7.0 - 7.9 34 4.0 10 5.0 0.05 700 0.5 7Z5 CZ1W 7.5 7.7 - 8.7 31 4.5 10 6.0 0.0 |
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Continental Device India Limited |
SURFACE MOUNT ZENER DIODES 1 550 1.0 5Z1 CZ1W 5.1 5.2 - 6.0 45 5.0 10 2.0 0.03 600 1.0 5Z6 CZ1W 5.6 5.8 - 6.6 41 2.0 10 3.0 0.04 700 1.0 6Z2 CZ1W 6.2 6.4 - 7.2 37 3.5 10 4.0 0.05 700 1.0 6Z8 CZ1W 6.8 7.0 - 7.9 34 4.0 10 5.0 0.05 700 0.5 7Z5 CZ1W 7.5 7.7 - 8.7 31 4.5 10 6.0 0.0 |
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Continental Device India Limited |
SURFACE MOUNT ZENER DIODES 1 550 1.0 5Z1 CZ1W 5.1 5.2 - 6.0 45 5.0 10 2.0 0.03 600 1.0 5Z6 CZ1W 5.6 5.8 - 6.6 41 2.0 10 3.0 0.04 700 1.0 6Z2 CZ1W 6.2 6.4 - 7.2 37 3.5 10 4.0 0.05 700 1.0 6Z8 CZ1W 6.8 7.0 - 7.9 34 4.0 10 5.0 0.05 700 0.5 7Z5 CZ1W 7.5 7.7 - 8.7 31 4.5 10 6.0 0.0 |
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Continental Device India Limited |
POWER TRANSISTORS Hz CSA1301F CSC3280F IC=1A, VCE=5V R: 55 - 110 ; MIN TYP MAX 5.0 5.0 UNIT µΑ µΑ V V V UNIT V V V A A W ºC ºC DataShee 160 2.8 2.0 1.5 200 Base Emitter on Voltage DC Current Gain Collector Output Capacitance VBE (on) hFE Cob 55 28 480 220 30 pF |
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Continental Device India Limited |
(CIL928A / CIL2328) SILICON PLANAR EPITAXIAL TRANSISTORS E=1mA, IC=0 VCB=30V, IE = 0 VEB=5V, IC = 0 VCE=2V, IC=500mA IC=1.5A, IB=30mA VCE=2V, IC=500mA IC=500mA, VCE=2V IE=0, VCB=10V, f=1MHz NPN PNP 120 30 48 100 MIN 30 30 5 0.1 0.1 320 2.0 1.0 V V MHz pF pF TYP MAX UNITS V V V µA µA *hFE Classification *P |
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Continental Device India Limited |
(CIL928A / CIL2328) SILICON PLANAR EPITAXIAL TRANSISTORS E=1mA, IC=0 VCB=30V, IE = 0 VEB=5V, IC = 0 VCE=2V, IC=500mA IC=1.5A, IB=30mA VCE=2V, IC=500mA IC=500mA, VCE=2V IE=0, VCB=10V, f=1MHz NPN PNP 120 30 48 100 MIN 30 30 5 0.1 0.1 320 2.0 1.0 V V MHz pF pF TYP MAX UNITS V V V µA µA *hFE Classification *P |
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Continental Device India Limited |
HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD General Purpose Hermetically Sealed Glass Package Switching Diode www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) SYMBOL VALUE DESCRIPTION I 75 Average Rectified Current F(AV) IFRM 200 Peak Rectified Current PTA Pow |
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Continental Device India Limited |
HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD General Purpose Hermetically Sealed Glass Package Switching Diode www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) SYMBOL VALUE DESCRIPTION I 75 Average Rectified Current F(AV) IFRM 200 Peak Rectified Current PTA Pow |
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Continental Device India Limited |
HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD General Purpose Hermetically Sealed Glass Package Switching Diode www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) SYMBOL VALUE DESCRIPTION I 75 Average Rectified Current F(AV) IFRM 200 Peak Rectified Current PTA Pow |
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Desde 2024. D4U Semiconductor.
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