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Continental |
NPN Epitaxial Silicon Power Transistor YP MAX 100 UNIT µA V V V 240 1.5 0.5 V V Base Emitter Saturation Voltage Collector Emitter Saturation Voltage Dynamic Characteristics DESCRIPTION Output Capacitance Input Capacitance *Pulsed Test tp=300µs,Duty Cycle<2% VBE (Sat) VCE (Sat) SYMBOL |
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Continental Device India Limited |
SILICON PLANAR SWITCHING DIODE IF = 5 mA Forward Voltage IF = 10 mA IF = 100 mA IF = 150 mA Reverse Voltage Leakage Current IR VR=75V VR=75V, Tj=150ºC VR=25V, Tj=150ºC VR=20V Diode Capacitance Reverse Recovery Time Cd trr VR=0V, f=1MHz IF=IR=10mA, Irr=0.1xIR, RL=100Ω MIN 0.62 MA |
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Continental Device India Limited |
SILICON PLANAR EPITAXIAL HIGH SPEED DIODES 5, CMBD4148 Reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA trr < 4 ns RATINGS (per diode) (at TA = 25°C unless otherwise specified) Limiting values Continuous reverse voltage Repetitive peak |
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Continental Device India Limited |
SILICON PLANAR EPITAXIAL HIGH SPEED DIODE less otherwise specified) Continuous reverse voltage VR Repetitive peak reverse voltage VRRM Forward current (d.c.) IF Repetitive peak forward current IFRM Non –repetitive peak forward current T = 1 µsec IFSM T = 1 sec IFSM Diode capacitance CD VR = 0 |
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Continental Device India Limited |
SILICON PLANAR EPITAXIAL HIGH SPEED DIODES 5, CMBD4148 Reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA trr < 4 ns RATINGS (per diode) (at TA = 25°C unless otherwise specified) Limiting values Continuous reverse voltage Repetitive peak |
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Continental Device India Limited |
SILICON PLANAR EPITAXIAL HIGH SPEED DIODE less otherwise specified) Continuous reverse voltage VR Repetitive peak reverse voltage VRRM Forward current (d.c.) IF Repetitive peak forward current IFRM Non –repetitive peak forward current T = 1 µsec IFSM T = 1 sec IFSM Diode capacitance CD VR = 0 |
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Continental Device India Limited |
SILICON PLANAR SWITCHING DIODE IF = 5 mA Forward Voltage IF = 10 mA IF = 100 mA IF = 150 mA Reverse Voltage Leakage Current IR VR=75V VR=75V, Tj=150ºC VR=25V, Tj=150ºC VR=20V Diode Capacitance Reverse Recovery Time Cd trr VR=0V, f=1MHz IF=IR=10mA, Irr=0.1xIR, RL=100Ω MIN 0.62 MA |
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Desde 2024. D4U Semiconductor.
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