Comset Semiconductors BD9 Hoja de datos

No.	parte #	Fabricante	Descripción
1	BD911	Comset Semiconductors	Silicon NPN Power Transistors st Condition(s) Min Typ Max ICBO Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Sustaining Voltage () Collector-Emitter saturation Voltage () Base-Emitter Saturation Voltage () Base-Emitter Voltage () D
2	BD912	Comset Semiconductors	Power Linear/Switching -VCE=50 V, IB=0V -VCB=100 V, IE=0V -VCB=100 V, IE=0V, Tj=150°C Min - Typ - Max -1 -0.5 Unit mA mA -5 -100 40 15 5 3 -1 -1.5 250 -150 1 3 2.5 MHz mA V V - Emitter Cutoff Current Collector Emitter Breakdown Voltage Base Emitter Voltage (*) -VBE
3	BD902	Comset Semiconductors	Silicon NPN Power Transistors BD898 – BD900 – BD902 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE= 0 VCB = -45 V IE= 0 VCB = -60 V TC=25°C IE= 0 VCB = -80 V IE= 0 VCB = -100 V IE= 0 VCB = -45 V IE= 0 VCB = -60 V TC=100° C IE= 0
4	BD909	Comset Semiconductors	Silicon NPN Power Transistors st Condition(s) Min Typ Max ICBO Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Sustaining Voltage () Collector-Emitter saturation Voltage () Base-Emitter Saturation Voltage () Base-Emitter Voltage () D
5	BD900	Comset Semiconductors	Silicon NPN Power Transistors BD898 – BD900 – BD902 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE= 0 VCB = -45 V IE= 0 VCB = -60 V TC=25°C IE= 0 VCB = -80 V IE= 0 VCB = -100 V IE= 0 VCB = -45 V IE= 0 VCB = -60 V TC=100° C IE= 0