Comset Semiconductor 2N3 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2N3773	Comset Semiconductor	NPN Power Transistor eakdown collector current Test Condition(s) Min 140 15 5 1.5 Typ - Max 2 2 Unit V mA mA IC= 200 mA, IB = 0 VCE= 140 V, IB= 0 VCE= 140 V, VBE= -1.5V VCE= 140 V, VBE= -1.5V Tcase = 150°C VEB= 7 V, IC= 0 IC= 8 A, VCE= 4 V IC= 16 A, VCE= 4 V IC= 8
2	2N3584	Comset Semiconductor	NPN SILICON POWER TRANSISTORS 17/10/2012 COMSET SEMICONDUCTORS 1\|3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN 2N3583 – 2N3584 – 2N3585 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICEO Ratings Test Condition(s) 2N3583 2N3584 2N3585 2N3583 2N3584
3	2N3789	Comset Semiconductor	EPITAXIAL-BASE TRANSISTORS 2N3792 ELETRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage Test Condition(s) 2N3789 2N3791 IC=-200 mA, IB=0 () 2N3790 2N3792 2N3789 2N3791 IC=-200 mA, IB=0 () 2N3790 2N3792 2N3789 VCE=-30
4	2N3020	Comset Semiconductor	SILICON PLANAR EPITAXIAL TRANSISTORS high gain and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC PD PD TJ TStg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Total Power Dis
5	2N3439	Comset Semiconductor	Transistor - http://www.DataSheet4U.co.kr/ NPN 2N3439 – 2N3440 ELECTRICAL CHARACTERISTICS Tj=25°C unless otherwise specified Symbol ICBO ICEO ICEX IEBO VCEO hFE VCE(SAT) VBE(SAT) fT Cob Ratings Collector Cutoff Current Collector Cutoff Current Collector Cut
6	2N3714	Comset Semiconductor	(2N3713 - 2N3716) EPITAXIAL-BASE TRANSISTORS 3716 ELETRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage Test Condition(s) 2N3713 2N3715 IC=200 mA, IB=0 () 2N3714 2N3716 2N3713 2N3715 IC=200 mA, IB=0 () 2N3714 2N3716 2N3713 VCE=30 V, IB=
7	2N3715	Comset Semiconductor	(2N3713 - 2N3716) EPITAXIAL-BASE TRANSISTORS 3716 ELETRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage Test Condition(s) 2N3713 2N3715 IC=200 mA, IB=0 () 2N3714 2N3716 2N3713 2N3715 IC=200 mA, IB=0 () 2N3714 2N3716 2N3713 VCE=30 V, IB=
8	2N3716	Comset Semiconductor	(2N3713 - 2N3716) EPITAXIAL-BASE TRANSISTORS 3716 ELETRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage Test Condition(s) 2N3713 2N3715 IC=200 mA, IB=0 () 2N3714 2N3716 2N3713 2N3715 IC=200 mA, IB=0 () 2N3714 2N3716 2N3713 VCE=30 V, IB=
9	2N3791	Comset Semiconductor	EPITAXIAL-BASE TRANSISTORS 2N3792 ELETRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage Test Condition(s) 2N3789 2N3791 IC=-200 mA, IB=0 () 2N3790 2N3792 2N3789 2N3791 IC=-200 mA, IB=0 () 2N3790 2N3792 2N3789 VCE=-30
10	2N3227	Comset Semiconductor	SILICON ANNULAR TRANSISTORS n voltage (1) Collector-Emitter voltage Test Condition(s) IE = 0 ; VCB = 20V IE = 0 ; VCB = 20V ; TA = 150°C VCE = 20V ; VEB(off) = 3V VCE = 20V ; VEB(off) = 3V IC =10 µA ; IB = 0 IE =10 µA ; IC = 0 IC = 10 mA IC =10 µA ; IB = 0 Min Typ 40 6 20 40
11	2N3447	Comset Semiconductor	TRANSISTORS S Symbol RthJC Ratings Thermal Resistance, Junction to Case 2N4347 2N3442 Value 1.75 1.5 Unit °C/W 1 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN 2N3442 – 2N4347 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) IC
12	2N3713	Comset Semiconductor	(2N3713 - 2N3716) EPITAXIAL-BASE TRANSISTORS 3716 ELETRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage Test Condition(s) 2N3713 2N3715 IC=200 mA, IB=0 () 2N3714 2N3716 2N3713 2N3715 IC=200 mA, IB=0 () 2N3714 2N3716 2N3713 VCE=30 V, IB=
13	2N3054	Comset Semiconductor	Silicon Power Transistor -Emitter saturation Voltage Base-Emitter Voltage Transition Frequency Test Condition(s) Min 55 40 8 500 Typ - Max 0.5 1 1 6 80 1 6 1.7 - Unit mA VCE= 30 V, IB= 0 VEB = 7V, IC = 0 VCE = 90V TC = 25°C VBE = 1.5V TC = 150°C IC=0.1 mA, IB=0 IC= 100
14	2N3110	Comset Semiconductor	General Purpose Amplifier s Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter saturation Voltage Base-Emitter saturation Voltage DC Cur
15	2N3441	Comset Semiconductor	Silicon Power Transistor A mA V V - IC= 100 mA , IB= 0 A VCE= 140 V , IB= 0 VCE= 140 V , VBE= 1.5 V VCE= 140 V , VBE= 1.5 V Tcase = 150°C VEB= 7 V, IC= 0 A IC= 2.7 A , IB= 900 mA IC= 40 A , IB= 4 A IC= 500 mA, VCE= 4 V IC= 2.7 A, VCE= 4 V (*) Pulse Duration = 300 µs, Duty
16	2N3442	Comset Semiconductor	TRANSISTORS S Symbol RthJC Ratings Thermal Resistance, Junction to Case 2N4347 2N3442 Value 1.75 1.5 Unit °C/W 1 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN 2N3442 – 2N4347 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) IC
17	2N3583	Comset Semiconductor	NPN SILICON POWER TRANSISTORS 17/10/2012 COMSET SEMICONDUCTORS 1\|3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN 2N3583 – 2N3584 – 2N3585 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICEO Ratings Test Condition(s) 2N3583 2N3584 2N3585 2N3583 2N3584
18	2N3585	Comset Semiconductor	NPN SILICON POWER TRANSISTORS 17/10/2012 COMSET SEMICONDUCTORS 1\|3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN 2N3583 – 2N3584 – 2N3585 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICEO Ratings Test Condition(s) 2N3583 2N3584 2N3585 2N3583 2N3584
19	2N3636	Comset Semiconductor	Silicon Planar RF Transistors COMSET SEMICONDUCTORS Min -175 -175 -5 Typ - Max -100 -50 - Unit nA nA V V V 1/3 21/09/2012 Datasheet pdf - http://www.DataSheet4U.co.kr/ PNP 2N3636 – 2N3637 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Con
20	2N3790	Comset Semiconductor	EPITAXIAL-BASE TRANSISTORS 2N3792 ELETRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage Test Condition(s) 2N3789 2N3791 IC=-200 mA, IB=0 () 2N3790 2N3792 2N3789 2N3791 IC=-200 mA, IB=0 () 2N3790 2N3792 2N3789 VCE=-30