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Compensated Deuices Incorporated |
1.5 WATT ZENER DIODES 600 200 200 mA 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 µA 50 50 35 5.0 4.0 1.0 0.5 10.0 5.0 VOLTS 1.0 1.0 1.0 1.0 1.0 1.0 2.0 3.72 4.08 MA 433 397 366 332 304 280 255 230 210 VOLTS .90 .80 .75 .70 .60 .50 .40 .35 .30 AMPS 4.2 3.9 3.6 3.3 3.0 2.7 2.5 2.3 |
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Compensated Deuices Incorporated |
DOUBLE PLUG CONSTRUCTION µA MAXIMUM REVERSE CURRENT IR@ VR MAXIMUM ZENER CURRENT 1 ZM VOLTS 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.5 2.0 2.5 3.5 4.0 5.0 6.0 7.0 8.0 9.0 mA 155 140 125 120 110 100 90 85 75 70 65 60 55 50 45 40 35 100 60 30 5 3 2 2 5 5 5 5 2 2 1 1 1 1 FIGURE 1 |
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Compensated Deuices Incorporated |
ZENER DIODE CHIPS µ A 10.0 10.0 1.0 1.0 1.0 1.0 .05 .05 .05 .05 .05 .05 .05 .05 .05 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 .01 VOLTS 5.17 5.70 6.24 6.61 6.92 7.60 8.44 9.12 9.87 10.65 11.40 12.15 12.92 13.67 14.44 15.20 1 |
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Compensated Deuices Incorporated |
1 AMP SCHOTTKY BARRIER RECTIFIER CHIPS 30 40 50 60 80 100 60 80 100 100 20 30 40 45 VOLTS 0.36 0.36 0.36 0.34 VOLTS 0.60 0.60 0.60 0.49 mA 0.10 0.10 0.10 0.05 mA 5.0 5.0 5.0 5.0 0.38 0.38 0.38 0.38 0.75 0.75 0.75 0.69 0.10 0.10 0.10 0.10 6.0 6.0 6.0 12.0 CHIP THICKNESS.......... |
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Compensated Deuices Incorporated |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES -55 to +100 -55 to +150 0 to + 75 -55 to +100 -55 to +150 0 to + 75 -55 to +100 -55 to +150 0 to + 75 -55 to +100 -55 to +150 0 to + 75 -55 to +100 -55 to +150 EFFECTIVE TEMPERATURE COEFFICIENT DIM D F G G1 S FIGURE 1 % / °C 0.01 0.01 0.01 0.005 |
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Compensated Deuices Incorporated |
SWITCHING DIODE ded. MOUNTING POSITION: Any. 22 COREY STREET, MELROSE, MASSACHUSETTS 02176 PHONE (781) 665-1071 FAX (781) 665-7379 WEBSITE: http://www.cdi-diodes.com E-mail: [email protected] IN4454 and 1N4454-1 1000 100 IF - Forward Current - (mA) 100ºC150 |
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Compensated Deuices Incorporated |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 9—6.5 6.2—6.9 5.9—6.5 5.9—6.5 6.2—6.9 5.9—6.5 5.9—6.5 mA 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 OHMS 15 10 15 15 10 15 15 10 15 15 10 15 15 10 mV 96 96 96 48 48 48 19 19 20 9 9 10 5 5 DESIGN DATA CASE: Hermetically sealed glass c |
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Compensated Deuices Incorporated |
1.5 WATT ZENER DIODES 10.0 5.0 VOLTS 1.0 1.0 1.0 1.0 1.0 1.0 2.0 3.72 4.08 MA 433 397 366 332 304 280 255 230 210 VOLTS .90 .80 .75 .70 .60 .50 .40 .35 .30 AMPS 4.2 3.9 3.6 3.3 3.0 2.7 2.5 2.3 2.1 DIM D F G S MILLIMETERS MIN MAX 2.31 2.62 0.48 0.71 4.28 5.08 0.08MIN. I |
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Compensated Deuices Incorporated |
9.0 VOLT NOMINAL ZENER VOLTAGE 9.45 8.55—9.45 8.55—9.45 8.55—9.45 8.55—9.45 mA 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 OHMS 20 20 20 20 20 20 20 20 20 20 20 20 mV 67 139 184 34 70 92 13 28 37 6.7 13.9 19 °C 0 to + 75 -55 to +100 -55 to +150 0 to + 75 -55 to +100 -55 to |
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Compensated Deuices Incorporated |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES RE RANGE IMPEDANCE STABILITY ZZT ∆ V ZT MAXIMUM (Note 1) OHMS 200 200 200 200 200 200 200 200 200 200 100 100 100 100 100 100 100 100 100 100 (Note 2) mV 64 132 32 66 13 26 6.4 13 3.2 6.6 64 132 32 66 13 26 6.4 13 3.2 6.6 0 -55 0 -55 0 -55 0 -55 0 -5 |
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Compensated Deuices Incorporated |
LOW REVERSE LEAKAGE CHARACTERISTICS mAdc µ V/ √ HZ mAdc 1N5518B 1N5519B 1N5520B 1N5521B 1N5522B 1N5523B 1N5524B 1N5525B 1N5526B 1N5527B 1N5528B 1N5529B 1N5530B 1N5531B 1N5532B 1N5533B 1N5534B 1N5535B 1N5536B 1N5537B 1N5538B 1N5539B 1N5540B 1N5541B 1N5542B 1N5543B 1N5544B 1N5545B |
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Compensated Deuices Incorporated |
8.4 VOLT NOMINAL ZENER VOLTAGE + 5% k:.................................Au AL THICKNESS.......25,000 Å Min GOLD THICKNESS...4,000 Å Min CHIP THICKNESS.............10 Mils NOTE 1 Zener impedance is derived by superimposing on lZT @ 60Hz rms a.c. current equal to 10% of lZT. The maximum |
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Compensated Deuices Incorporated |
ZENER DIODE CHIPS 25.0 27.0 28.0 30.0 33.0 36.0 39.0 43.0 ZENER TEST CURRENT lZT MAXIMUM VOLTAGE REGULATION ∆VZ (Note 2) VOLTS 0.70 0.70 0.75 0.80 0.80 0.90 0.95 0.95 0.97 0.99 0.99 0.97 0.96 0.95 0.90 0.75 0.50 0.10 0.08 0.10 0.11 0.12 0.13 0.14 0.15 0.16 0.17 0.18 |
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Compensated Deuices Incorporated |
ZENER DIODE CHIPS MS 10 10 9 9 8 7 5 2 3.5 4.0 4.5 5.0 7 8 9 10 14 16 20 22 23 25 35 40 45 50 60 70 80 95 110 125 150 175 200 250 350 MAXIMUM REVERSE CURRENT (lR @ VR) MAXIMUM KNEE IMPEDANCE (ZZK ) (Note 2) OHMS 400 400 400 400 500 550 600 700 700 700 700 700 700 700 |
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Compensated Deuices Incorporated |
LOW CURRENT OPERATION AT 250 uA 5 90 87 85 83 80 77 75 70 65 61 µ V/ 1 1 1 1 1 1 1 1 1 1 1 2 4 5 Hz 1N4614 1N4615 1N4616 1N4617 1N4618 1N4619 1N4620 1N4621 1N4622 1N4623 1N4624 1N4625 1N4626 1N4627 1.8 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 FIGURE 1 DESIGN DATA C |
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Compensated Deuices Incorporated |
3 AMP SCHOTTKY BARRIER RECTIFIERS d, “B” Body per MIL-PRF-19500/620. D-5B LEAD MATERIAL: Copper clad steel LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 30 ˚C/W maximum at L = .375 inch THERMAL IMPEDANCE: (ZOJX): 3 ˚C/W maximum POLARITY: Cathode end is banded. MOUNTING POSITIO |
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Compensated Deuices Incorporated |
3 AMP SCHOTTKY BARRIER RECTIFIERS INISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 10 ˚C/W maximum at L = 0 inch THERMAL IMPEDANCE: (ZOJX): 3 ˚C/W maximum POLARITY: Cathode end is banded. MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) of this device is approximate |
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Compensated Deuices Incorporated |
(1N3821 - 1N3828A) ZENER DIODE 0 9 9 9 9 8 8 7 7 5 5 2 2 mA 276 276 252 252 www.DataSheet.co.kr µA 100 100 75 75 25 25 5 5 5 5 3 3 3 3 3 3 VOLTS 1 1 1 1 1 1 1 1 1 1 1 1 2 2 3 3 FIGURE 1 238 238 213 213 194 194 178 178 162 162 146 146 DESIGN DATA CASE: Hermetically sealed gla |
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Compensated Deuices Incorporated |
SCHOTTKY BARRIER RECTIFIER FARADS 5.0 0.6 50 5.0 0.6 50 5.0 0.6 50 5.0 0.6 50 5.0 0.6 50 5.0 0.6 50 BACKSIDE IS CATHODE FIGURE 1 MAXIMUM RATINGS, 0.5 AMP DEVICES Operating Temperature: -65°C to +125°C Storage Temperature: -65°C to +150°C Average Rectified Forwar |
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Compensated Deuices Incorporated |
500 mW ZENER DIODES 57 141 128 117 108 99 90 83 76 68 63 VOLTS 1.5 1.5 1.5 1.6 1.6 1.6 0.9 0.5 0.4 0.4 0.3 0.35 AMPS 2.5 2.2 2.0 1.8 1.65 1.5 1.4 1.27 1.17 1.10 0.97 1.23 VOLTS 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.5 2.0 2.5 3.5 4.0 IZSM SURGE VR IR1 @ 25ºC µA 100 60 30 5.0 3.0 |
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Desde 2024. D4U Semiconductor.
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