| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Comchip |
Small Signal Transistor -Power dissipation O PCM: 0.20W (@TA=25 C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846=80V BC847=50V BC848=30V -Operating and storage junction temperature range: TJ, TSTG= -65 to +150 OC SOT-23 0.118(3.00) 0.110(2.80) 3 0.055(1 |
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Comchip |
Small Signal Transistor -Power dissipation PCM: 0.15W (@TA=25°C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846W=80V BC847W=50V BC848W=30V -Operating and storage junction temperature range: TJ, TSTG= -55 to +150°C Mechanical data -Case: SOT-323, molded pl |
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Comchip |
General Purpose Transistors - For general AF applications. - High collector current. - High current gain. - Low collector-emitter saturation voltage. Marking: BC817-16-G: 6A BC817-25-G: 6B BC817-40-G: 6C Diagram: Collector 3 1 Base 2 Emitter SOT-23 0.056(1.40) 0.047(1.20) 0. |
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Comchip |
General Purpose Transistors - For general AF applications. - High collector current. - High current gain. - Low collector-emitter saturation voltage. Mechanical data - Case: SOT-23, molded plastic. - Terminals: Solderable per MIL-STD-750, method 2026. - Weight: 0.0078 grams(ap |
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Comchip |
General Purpose Transistors - For general AF applications. - High collector current. - High current gain. - Low collector-emitter saturation voltage. Mechanical data - Case: SOT-23, molded plastic. - Terminals: Solderable per MIL-STD-750, method 2026. - Weight: 0.0078 grams(ap |
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Comchip |
Small Signal Transistor -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications -Power dissipation PCM: 0.15W (@TA=25°C) -Collector current ICM: -0.1A -Collector-base voltage VCBO: BC856W= -80V BC857W= -50V BC858W= -30V -Operating and storage ju |
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Comchip |
Small Signal Transistor -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications -Power dissipation PCM: 0.15W (@TA=25°C) -Collector current ICM: -0.1A -Collector-base voltage VCBO: BC856W= -80V BC857W= -50V BC858W= -30V -Operating and storage ju |
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Comchip |
Small Signal Transistor -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications -Power dissipation PCM: 0.15W (@TA=25°C) -Collector current ICM: -0.1A -Collector-base voltage VCBO: BC856W= -80V BC857W= -50V BC858W= -30V -Operating and storage ju |
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Comchip |
Small Signal Transistor -Power dissipation PCM: 0.15W (@TA=25°C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846W=80V BC847W=50V BC848W=30V -Operating and storage junction temperature range: TJ, TSTG= -55 to +150°C Mechanical data -Case: SOT-323, molded pl |
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Comchip |
Small Signal Transistor -Power dissipation PCM: 0.15W (@TA=25°C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846W=80V BC847W=50V BC848W=30V -Operating and storage junction temperature range: TJ, TSTG= -55 to +150°C Mechanical data -Case: SOT-323, molded pl |
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Comchip |
Small Signal Transistor - Power dissipation PCM: 0.15W (@TA=25°C) - Collector current ICM: 0.1A - Collector-base voltage VCBO: BC846W=80V BC847W=50V BC848W=30V Mechanical data - Case: SOT-323, molded plastic. - Terminals: solderable per MIL-STD-750, method 2026. - Approx. w |
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Comchip |
Small Signal Transistor - Power dissipation PCM: 0.15W (@TA=25°C) - Collector current ICM: 0.1A - Collector-base voltage VCBO: BC846W=80V BC847W=50V BC848W=30V Mechanical data - Case: SOT-323, molded plastic. - Terminals: solderable per MIL-STD-750, method 2026. - Approx. w |
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Comchip |
Small Signal Transistor - Power dissipation PCM: 0.15W (@TA=25°C) - Collector current ICM: 0.1A - Collector-base voltage VCBO: BC846W=80V BC847W=50V BC848W=30V Mechanical data - Case: SOT-323, molded plastic. - Terminals: solderable per MIL-STD-750, method 2026. - Approx. w |
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Comchip |
Small Signal Transistor -Power dissipation O PCM: 0.20W (@TA=25 C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846=80V BC847=50V BC848=30V -Operating and storage junction temperature range: TJ, TSTG= -65 to +150 OC SOT-23 0.118(3.00) 0.110(2.80) 3 0.055(1 |
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Comchip |
Small Signal Transistor -Power dissipation O PCM: 0.20W (@TA=25 C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846=80V BC847=50V BC848=30V -Operating and storage junction temperature range: TJ, TSTG= -65 to +150 OC SOT-23 0.118(3.00) 0.110(2.80) 3 0.055(1 |
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Comchip |
Small Signal Transistor -Power dissipation O PCM: 0.20W (@TA=25 C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846=80V BC847=50V BC848=30V -Operating and storage junction temperature range: TJ, TSTG= -65 to +150 OC SOT-23 0.118(3.00) 0.110(2.80) 3 0.055(1 |
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Comchip |
Small Signal Transistor -Power dissipation O PCM: 0.20W (@TA=25 C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846=80V BC847=50V BC848=30V -Operating and storage junction temperature range: TJ, TSTG= -65 to +150 OC SOT-23 0.118(3.00) 0.110(2.80) 3 0.055(1 |
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Comchip |
Small Signal Transistor -Power dissipation O PCM: 0.20W (@TA=25 C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846=80V BC847=50V BC848=30V -Operating and storage junction temperature range: TJ, TSTG= -65 to +150 OC SOT-23 0.118(3.00) 0.110(2.80) 3 0.055(1 |
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Comchip |
Small Signal Transistor -Power dissipation O PCM: 0.20W (@TA=25 C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846=80V BC847=50V BC848=30V -Operating and storage junction temperature range: TJ, TSTG= -65 to +150 OC SOT-23 0.118(3.00) 0.110(2.80) 3 0.055(1 |
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Comchip |
Small Signal Transistor -Power dissipation O PCM: 0.20W (@TA=25 C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846=80V BC847=50V BC848=30V -Operating and storage junction temperature range: TJ, TSTG= -65 to +150 OC SOT-23 0.118(3.00) 0.110(2.80) 3 0.055(1 |
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Desde 2024. D4U Semiconductor.
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