Central Semiconductor Corp PMD Hoja de datos

No.	parte #	Fabricante	Descripción
1	PMD19K100	Central Semiconductor Corp	SILICON POWER DARINGTON TRANSISTORS
2	PMD10K	Central Semiconductor Corp	SILICON POWER DARLING TRANSISTORSl
3	PMD10K60	Central Semiconductor Corp	SILICON POWER DARLING TRANSISTORSl
4	PMD11K100	Central Semiconductor Corp	SILICON POWER DARLING TRANSISTORSl
5	PMD16K	Central Semiconductor Corp	SILICON POWER DARLINGTON TRANSISTORS R VCE=Rated VCEO, RBE=1.0kΩ, TC=150°C IEBO VEB=5.0V BVCEO IC=100mA (PMD16K60, 17K60) 60 BVCEO IC=100mA (PMD16K80, 17K80) 80 BVCEO IC=100mA (PMD16K100, 17K100) 100 VCE(SAT) IC=10A, IB=40mA VBE(SAT) IC=10A, IB=40mA VBE(ON) VCE=3.0V, IC=10A
6	PMD16K80	Central Semiconductor Corp	SILICON POWER DARLINGTON TRANSISTORS
7	PMD19K80	Central Semiconductor Corp	SILICON POWER DARINGTON TRANSISTORS
8	PMD10K100	Central Semiconductor Corp	SILICON POWER DARLING TRANSISTORSl
9	PMD10K80	Central Semiconductor Corp	SILICON POWER DARLING TRANSISTORSl
10	PMD11K	Central Semiconductor Corp	SILICON POWER DARLING TRANSISTORSl
11	PMD11K60	Central Semiconductor Corp	SILICON POWER DARLING TRANSISTORSl
12	PMD11K80	Central Semiconductor Corp	SILICON POWER DARLING TRANSISTORSl
13	PMD16K100	Central Semiconductor Corp	SILICON POWER DARLINGTON TRANSISTORS
14	PMD16K60	Central Semiconductor Corp	SILICON POWER DARLINGTON TRANSISTORS
15	PMD17K	Central Semiconductor Corp	SILICON POWER DARLINGTON TRANSISTORS R VCE=Rated VCEO, RBE=1.0kΩ, TC=150°C IEBO VEB=5.0V BVCEO IC=100mA (PMD16K60, 17K60) 60 BVCEO IC=100mA (PMD16K80, 17K80) 80 BVCEO IC=100mA (PMD16K100, 17K100) 100 VCE(SAT) IC=10A, IB=40mA VBE(SAT) IC=10A, IB=40mA VBE(ON) VCE=3.0V, IC=10A
16	PMD17K100	Central Semiconductor Corp	SILICON POWER DARLINGTON TRANSISTORS
17	PMD17K60	Central Semiconductor Corp	SILICON POWER DARLINGTON TRANSISTORS
18	PMD17K80	Central Semiconductor Corp	SILICON POWER DARLINGTON TRANSISTORS
19	PMD18K	Central Semiconductor Corp	COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS MBOL TEST CONDITIONS MIN ICER VCE=54V, RBE=2.2kΩ (PMD18K, 19K80) ICER VCE=67V, RBE=2.2kΩ (PMD18K, 19K100) IEBO VEB=5.0V BVCER IC=100mA, RBE=2.2kΩ (PMD18K, 19K80) 80 BVCER IC=100mA, RBE=2.2kΩ (PMD18K, 19K100) 100 BVCEO IC=100mA (PMD18K, 19K8
20	PMD18K100	Central Semiconductor Corp	SILICON POWER DARINGTON TRANSISTORS