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Central Semiconductor |
DUAL P-CHANNEL MOSFET • ESD protection up to 1800V (Human Body Model) • 350mW power dissipation • Very low rDS(ON) • Low threshold voltage • Logic level compatible • Small, SOT-363 surface mount package MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage |
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Central Semiconductor Corp |
SURFACE MOUNT SILICON TRIPLE ISOLATED HIGH VOLTAGE SCHOTTKY DIODE TM Semiconductor Corp. • MEETS GALVANIC ISOLATION REQUIREMENTS OF IEEE 1394 • HIGH VOLTAGE (70V) • ULTRAmini™ PACKAGE • REQUIRES LESS BOARD SPACE THAN 3 INDIVIDUAL DIODES • LOW FORWARD VOLTAGE SOT-363 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR |
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Central Semiconductor Corp |
ULTRAmini. DUAL OPPOSING HIGH VOLTAGE SCHOTTKY DIODES TM Semiconductor Corp. • • • • SOT-363 CASE DUAL OPPOSING (DO) SCHOTTKY DIODES HIGH VOLTAGE (70V) LOW FORWARD VOLTAGE GALVANICALLY ISOLATED DESCRIPTION: The Central Semiconductor CMKD6263DO incorporates two galvanically isolated, High Voltage, |
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Central Semiconductor Corp |
ULTRAmini. DUAL OPPOSING SCHOTTKY DIODES TM Semiconductor Corp. • • • • SOT-363 CASE DUAL OPPOSING (DO) SCHOTTKY DIODES SPACE SAVINGS ULTRAmini™ FAMILY GALVANICALLY ISOLATED LOW FORWARD VOLTAGE (0.58V TYP @ 100mA) DESCRIPTION: The Central Semiconductor CMKSH-3DO incorporates two galva |
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Central Semiconductor Corp |
ULTRAmini. SURFACE MOUNT COMPLEMENTARY TRANSISTORS , VEB(OFF)=3.0V VCE=30V, VEB(OFF)=500mV IC=10µA IC=10mA IE=10µA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=1.0V, IC=150mA VCE=10V, IC=500mA NPN (Q |
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Central Semiconductor Corp |
SURFACE MOUNT DUAL PNP SILICON TRANSISTORS 0V, VBE=0.5V 50 BVCBO IC=10µA 60 BVCEO IC=10mA 60 BVEBO IE=10µA 5.0 VCE(SAT) IC=150mA, IB=15mA 0.4 VCE(SAT) IC=500mA, IB=50mA 1.6 VBE(SAT) IC=150mA, IB=15mA 1.3 VBE(SAT) IC=500mA, IB=50mA 2.6 hFE VCE=10V, IC=0.1mA 75 hFE VCE= |
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Central Semiconductor Corp |
ULTRAmini. SURFACE MOUNT SILICON TRANSISTORS CB=20V VEB=3.0V IC=100µA IC=1.0mA IE=100µA IC=10mA, IB=1.0mA IC=10mA, IB=1.0mA VCE=5.0V, IC=0.1mA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=500µA, f=20MHz VCB=5.0V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz VCE=5.0V, IC=1.0mA, f=1.0kHz VCE=5.0V |
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Central Semiconductor |
ULTRA-HIGH SPEED SILICON SWITCHING DIODES |
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Central Semiconductor |
ULTRA-HIGH SPEED SILICON SWITCHING DIODES |
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Central Semiconductor Corp |
ULTRAminiTM SURFACE MOUNT DUAL NPN SMALL SIGNAL SWITCHING TRANSISTORS 15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=1.0V, IC=150mA VCE=10V, IC=150mA VCE=10V, IC=500mA O MIN MAX 10 10 10 10 75 40 6.0 0.3 1.0 1.2 2.0 0.6 35 50 75 50 100 40 UNITS n |
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Central Semiconductor Corp |
ULTRAmini. DUAL SMALL SIGNAL SWITCHING TRANSISTOR TM Semiconductor Corp. • • • SPACE SAVING ULTRAmini™ FAMILY TWO NPN OR TWO PNP TRANSISTORS IN A SINGLE PACKAGE COMPLEMENTARY, ONE NPN AND ONE PNP TRANSISTOR IN A SINGLE PACKAGE Marking Codes: CMKT3904 K40 CMKT3906 K60 CMKT3946 K46 SOT-363 DESC |
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Central Semiconductor Corp |
ULTRAmini. SURFACE MOUNT SILICON TRANSISTORS CB=20V VEB=3.0V IC=100µA IC=1.0mA IE=100µA IC=10mA, IB=1.0mA IC=10mA, IB=1.0mA VCE=5.0V, IC=0.1mA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=500µA, f=20MHz VCB=5.0V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz VCE=5.0V, IC=1.0mA, f=1.0kHz VCE=5.0V |
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Central Semiconductor Corp |
ULTRAmini. SURFACE MOUNT SILICON TRANSISTORS CB=20V VEB=3.0V IC=100µA IC=1.0mA IE=100µA IC=10mA, IB=1.0mA IC=10mA, IB=1.0mA VCE=5.0V, IC=0.1mA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=500µA, f=20MHz VCB=5.0V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz VCE=5.0V, IC=1.0mA, f=1.0kHz VCE=5.0V |
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Central Semiconductor |
ULTRA LOW LEAKAGE SILICON SWITCHING DIODES • Low Total Conduction Losses MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s P |
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Central Semiconductor |
ULTRA LOW LEAKAGE SILICON SWITCHING DIODES 100mA VR=0, f=1 MHz IR=IF=10mA, RL=100Ω Rec. to 1.0mA www.DataSheet.co.kr MIN 100 MAX 500 0.85 0.95 1.1 2.0 3.0 UNITS pA V V V V pF µs R2 (7-August 2003) Datasheet pdf - http://www.DataSheet4U.net/ Central TM CMKD6001 SURFACE MOUNT ULTRAmini™ |
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Central Semiconductor |
SURFACE MOUNT DUAL PNP SILICON TRANSISTORS 0V, VBE=0.5V 50 BVCBO IC=10µA 60 BVCEO IC=10mA 60 BVEBO IE=10µA 5.0 VCE(SAT) IC=150mA, IB=15mA 0.4 VCE(SAT) IC=500mA, IB=50mA 1.6 VBE(SAT) IC=150mA, IB=15mA 1.3 VBE(SAT) IC=500mA, IB=50mA 2.6 hFE VCE=10V, IC=0.1mA 75 hFE VCE= |
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Central Semiconductor |
DUAL NPN SILICON TRANSISTORS 10mA, IB=1.0mA 0.5 VBE(SAT) IC=10mA, IB=1.0mA 0.8 hFE VCE=5.0V, IC=0.1mA 400 1200 hFE VCE=5.0V, IC=1.0mA 450 hFE VCE=5.0V, IC=10mA 400 fT VCE=5.0V, IC=500μA, f=20MHz 50 Cob VCB=5.0V, IE=0, f=1.0MHz 4.0 Cib VBE=0.5V, IC=0, f=1.0MHz 10 |
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Central Semiconductor |
SURFACE MOUNT SILICON DUAL SMALL SIGNAL NPN SWITCHING TRANSISTOR • ULTRAmini™ space saving package containing two 3920 NPN transistors MARKING CODE: K20 APPLICATIONS: • Load switching • Small signal amplification • Lamp and relay drivers • MOSFET gate drive MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Coll |
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Central Semiconductor |
SURFACE MOUNT TRIPLE ISOLATED HIGH SPEED SILICON SWITCHING DIODES |
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Central Semiconductor |
PNP/PNP DUAL SMALL SIGNAL SWITCHING TRANSISTORS • Two NPN (3904) or Two PNP (3906) Transistors in a single package MARKING CODES: CMKT3904: K04 CMKT3906: K06 MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissi |
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Desde 2024. D4U Semiconductor.
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