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Central Semiconductor |
SCHOTTKY BRIDGE RECTIFIER • Low Leakage Current (20µA TYP @ VRRM) • High 1.0A Current Rating • Low VF Schottky Diodes (440mV MAX @ IF=1.0A) MAXIMUM RATINGS: (TA=25°C unless otherwise noted) Peak Repetitive Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forw |
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Central Semiconductor Corp |
1.0 AMP DUAL IN LINE BRIDGE RECTIFIER TA=125°C VF IF=1.0A CJ VR=4.0V, f=1.0MHz 25 MAX 10 0.5 1.1 UNITS µA mA V pF R3 (4-January 2010) CBR1-D020S SERIES SURFACE MOUNT 1 AMP SILICON BRIDGE RECTIFIER SMDIP CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER w w w. c e n t r a l s e m |
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Central Semiconductor |
SILICON BRIDGE RECTIFIERS wise noted) SYMBOL TEST CONDITIONS MIN MAX IR VR=Rated VRRM 10 VF IF=1.0A 1.1 UNITS μA V R3 (11-June 2012) CBR1-D010 SERIES SILICON BRIDGE RECTIFIER 1 AMP, 100 THRU 1000 VOLTS DIP CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER w w w. c |
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Central Semiconductor |
1.0 AMP DUAL IN LINE BRIDGE RECTIFIER TA=125°C VF IF=1.0A CJ VR=4.0V, f=1.0MHz 25 MAX 10 0.5 1.1 UNITS µA mA V pF R3 (4-January 2010) CBR1-D020S SERIES SURFACE MOUNT 1 AMP SILICON BRIDGE RECTIFIER SMDIP CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER w w w. c e n t r a l s e m |
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Central Semiconductor |
SILICON BRIDGE RECTIFIERS °C °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS TYP MAX IR VR=Rated VRRM 10 IR VR=Rated VRRM, TA=125°C 500 VF IF=5.0A 1.2 CJ VR=4.0V, f=1.0MHz 300 UNITS μA μA V pF R3 (24-June 2013) |
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Central Semiconductor |
SILICON BRIDGE RECTIFIERS °C °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS TYP MAX IR VR=Rated VRRM 10 IR VR=Rated VRRM, TA=125°C 500 VF IF=5.0A 1.2 CJ VR=4.0V, f=1.0MHz 300 UNITS μA μA V pF R3 (24-June 2013) |
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Central Semiconductor |
SILICON BRIDGE RECTIFIERS |
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Central Semiconductor |
SILICON BRIDGE RECTIFIERS |
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Central Semiconductor |
SILICON BRIDGE RECTIFIERS |
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Central Semiconductor |
SILICON BRIDGE RECTIFIERS |
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Central Semiconductor |
SILICON BRIDGE RECTIFIERS ITIONS IR VR=Rated VRRM VF IF=5.0A trr IF=0.5A, IR=1.0A, Irr=0.25A (100V, 200V, 400V) trr IF=0.5A, IR=1.0A, Irr=0.25A (600V) MIN MAX 10 1.3 200 350 UNITS μA V ns ns R1 (4-November 2013) CBR10F-010P SERIES FAST RECOVERY SILICON BRIDGE RECTIFIERS |
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Central Semiconductor |
SURFACE MOUNT 1 AMP FAST RECOVERY SILICON BRIDGE RECTIFIER 5A, IR=1.0A, Rec. to 0.25A (200V, 300V, 400V) trr IF=0.5A, IR=1.0A, Rec. to 0.25A (600V) trr IF=0.5A, IR=1.0A, Rec. to 0.25A (800V, 1000V) CJ VR=4.0V, f=1.0MHz 25 MAX 5.0 0.5 1.3 200 300 500 UNITS µA mA V ns ns ns pF R1 (4-January 2010) CBR1F |
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Central Semiconductor |
SURFACE MOUNT 1 AMP FAST RECOVERY SILICON BRIDGE RECTIFIER 5A, IR=1.0A, Rec. to 0.25A (200V, 300V, 400V) trr IF=0.5A, IR=1.0A, Rec. to 0.25A (600V) trr IF=0.5A, IR=1.0A, Rec. to 0.25A (800V, 1000V) CJ VR=4.0V, f=1.0MHz 25 MAX 5.0 0.5 1.3 200 300 500 UNITS µA mA V ns ns ns pF R1 (4-January 2010) CBR1F |
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Central Semiconductor |
SILICON BRIDGE RECTIFIERS ITIONS IR VR=Rated VRRM VF IF=12.5A trr IF=0.5A, IR=1.0A, Irr=0.25A (100V, 200V, 400V) trr IF=0.5A, IR=1.0A, Irr=0.25A (600V) MIN MAX 10 1.3 200 350 UNITS μA V ns ns R1 (4-November 2013) CBR25F-010P SERIES FAST RECOVERY SILICON BRIDGE RECTIFIERS |
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Central Semiconductor |
SILICON BRIDGE RECTIFIERS ITIONS IR VR=Rated VRRM VF IF=12.5A trr IF=0.5A, IR=1.0A, Irr=0.25A (100V, 200V, 400V) trr IF=0.5A, IR=1.0A, Irr=0.25A (600V) MIN MAX 10 1.3 200 350 UNITS μA V ns ns R1 (4-November 2013) CBR25F-010P SERIES FAST RECOVERY SILICON BRIDGE RECTIFIERS |
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Central Semiconductor |
SILICON BRIDGE RECTIFIERS |
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Central Semiconductor |
SILICON BRIDGE RECTIFIERS • Efficient use of board space: requires only 42mm2 of board space vs. 120mm2 of board space needed for industry standard 1.0 Amp surface mount bridge rectifier. • 50% higher density (Amps/mm2) than the industry standard 1.0 Amp surface mount bridge |
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Central Semiconductor |
SCHOTTKY BRIDGE RECTIFIER • Low Leakage Current (20µA TYP @ VRRM) • High 2.0A Current Rating • Low VF Schottky Diodes (500mV MAX @IF=2.0A) MAXIMUM RATINGS: (TA=25°C unless otherwise noted) Peak Repetitive Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forwa |
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Central Semiconductor |
SCHOTTKY BRIDGE RECTIFIER • Low Leakage Current (40µA TYP @ VRRM) • High 5.0A Current Rating • Low VF Schottky Diodes (500mV MAX @ IF=5.0A) MAXIMUM RATINGS: (TA=25°C unless otherwise noted) Peak Repetitive Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forw |
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Central Semiconductor |
SURFACE MOUNT LOW PROFILE SILICON BRIDGE RECTIFIER • Low leakage current (10μA MAX @ VRRM) • Low profile case (1.45mm MAX) MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Peak Repetitive Reverse Voltage VRRM DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) Average Forward Current |
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Desde 2024. D4U Semiconductor.
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