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Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent Circuit MTD030N10QJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTD030N10QJ3-0-T3-G Package Shipping |
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Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=10A 40V 58A 13.4A 5.1 mΩ(typ) 6.6 mΩ(typ) Symbol MTD07N04E3 Outline TO-220 G：G |
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CYStech |
N-CHANNEL MOSFET • Low on-resistance • High ESD capability • High speed switching • Low-voltage drive(4V) • Easily designed drive circuits • Easy to use in parallel • Pb-free package Equivalent Circuit MTDN7002ZHS6R Outline SOT-363R Tr1 Tr2 The following character |
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Cystech Electonics |
Dual N-Channel Enhancement Mode Power MOSFET • Simple drive requirement • Low on-resistance • Fast switching speed • Dual N-ch MOSFET package • Pb-free lead plating & Halogen-free package RDSON@VGS=5V, ID=2A 100V 2.9A 2.3A 70mΩ(typ) 82mΩ(typ) Equivalent Circuit MTDA0A10Q8 Outline SOP-8 D2 D |
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Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=10A 40V 53A 13A 5.1 mΩ(typ) 6.6 mΩ(typ) Symbol MTD07N04FP Outline TO-220FP G：G |
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Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET • Single Drive Requirement • Fast Switching Characteristic • Pb-free lead plating and halogen-free package Symbol MTDA0N10L3 Outline SOT-223 D G：Gate D：Drain S：Source S D G Ordering Information Device MTDA0N10L3-0-T3-G Package SOT-223 (Pb-fre |
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Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET • Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package Equivalent Circuit MTDA4N20J3 Outline TO-252 G：Gate D：Drain S：Source GDS Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Volt |
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Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package Symbol MTDB6N20H8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Inform |
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Cystech Electonics |
ESD protected Dual N-CHANNEL MOSFET |
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CYStech |
N-CHANNEL MOSFET • High speed switching • Low-voltage drive(1.5V) • Easily designed drive circuits • Easy to use in parallel • Pb-free package RDSON(TYP) VGS=4.5V, ID=200mA VGS=2.5V, ID=175mA VGS=1.8V, ID=150mA VGS=1.5V, ID=40mA 30V 0.3A 0.85Ω 1.23Ω 1.8Ω 2.3Ω Equ |
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CYStech |
Dual N-Channel Enhancement Mode Power MOSFET • RDS(ON)=40mΩ@VGS=4.5V, ID=4A • Simple drive requirement • Low on-resistance • Fast switching speed • Dual N-ch MOSFET package • Pb-free package Equivalent Circuit MTDN4228Q8 Outline SOP-8 G：Gate S：Source D：Drain MTDN4228Q8 CYStek Product Speci |
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CYStech |
Dual N-Channel Enhancement Mode Power MOSFET • Simple drive requirement • Low gate charge • Low on-resistance • Fast switching speed • ESD protected • Pb-free lead plating and halogen-free package Equivalent Circuit MTDN5280Z6 Outline TDFN2×5-6L G：Gate S：Source D：Drain MTDN5820Z6 CYStek Pr |
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CYStech |
Dual N-Channel Enhancement Mode Power MOSFET • 1.8V drive available • Low on-resistance • Fast switching speed • Pb-free lead plating package Equivalent Circuit MTDN8810T8 G：Gate S : Source D : Drain Ordering Information Device MTDN8810T8 Package TSSOP-8 (Pb-free lead plating package) Shi |
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Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=11A RDS(ON)@VGS=6V, ID=6A 100V 48A 10 |
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Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating package Symbol MTD06N04Q8 Outline Pin 1 SOP-8 G：Gate D：Drain S：Source MTD06N04Q8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Pa |
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Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET Single Drive Requirement Low On-resistance Fast switching Characteristic Pb-free lead plating and halogen-free package Symbol MTD070P15J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTD070P15J3-0-T3-G |
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CYStech |
P-Channel Enhancement Mode Power MOSFET • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating & Halogen-free package BVDSS ID@ VGS=-10V, TC=25°C RDSON@VGS=-10V, ID=-25A RDSON@VGS=-6V, ID=-10A -30V -102A(silicon limit) 3.9mΩ(typ.) 5.6mΩ(typ.) Equivalent Circuit MTD5D0P03J3 |
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CYStech |
N-Channel Logic Level Enhancement Mode Power MOSFET VGS=4.5V, ID=3A • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating package 100V 4.9A 52mΩ 57mΩ 73mΩ Symbol MTD55N10Q8 Outline Pin 1 SOP-8 G：Gate D：Drain S：Source Ordering Information Device MTD55N10Q8-0-T3-G Package SOP-8 (P |
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Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating package RDSON(MAX) 120mΩ Equivalent Circuit MTDA0P10FP Outline TO-220FP G：Gate D：Drain S：Source Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol D |
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Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating & Halogen-free package Equivalent Circuit MTDA5N10J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTDA5N10J3-0-T3-G Package TO-252 (Pb-free l |
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Desde 2024. D4U Semiconductor.
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