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Cystech Electonics |
N-Channel Logic Level Enhancement Mode Power MOSFET • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free Lead Plating and Halogen-free package Symbol MTB12N03Q8 Outline SOP-8 Pin 1 G：Gate D：Drain S：Source MTB12 |
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CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free lead plating and Halogen-free package Symbol MTB04N03H8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source MTB0 |
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Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free and Halogen-free package Symbol MTB11N03Q8 Outline Pin 1 SOP-8 G：Gate D：Drain S：Source MTB11N03Q8 CYStek |
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CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and halogen-free package Symbol MTB090N06I3 Outline TO-251 G：Gate D：Drain S：Source G DS Ordering Information Device MTB090N |
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CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rating Repetitive Avalanche Rated Pb-free lead plating package Ordering Information Device MTB04N03Q8-0-T3-G MTB04N03Q8-0-TF-G Package SOP-8 (Pb-fre |
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Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET • Low Gate Charge • Simple Drive Requirement • ESD protected gate • Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TC=25°C RDSON@VGS=10V, ID=8A RDSON@VGS=4.5V, ID=6A 100V 10A 108mΩ(TYP) 123mΩ(TYP) Equivalent Circuit MTB100N10RKJ3 O |
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Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating & Halogen-free package BVDSS ID @ VGS=10V, TA=25°C RDSON@VGS=10V, ID=1A RDSON@VGS=4.5V, ID=1A 250V 1.2A 722mΩ (typ.) 732mΩ (typ.) Equivalent Circuit MTBH0N25L3 G：Gate D：Drain S：So |
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Cystech Electonics |
Dual N-Channel Enhancement Mode Power MOSFET ID@VGS=10V, TA=70°C • Low On Resistance RDS(ON)@VGS=10V, ID=8A • Simple Drive Requirement • Low Gate Charge RDS(ON)@VGS=4.5V, ID=4A • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package 40V 18.5A 11.7A 5.6A 4.5A 16.4 |
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Cystech Electonics |
Dual P-Channel Logic Level Enhancement Mode Power MOSFET • RDS(ON)=75mΩ(max.)@VGS=-10V, ID=-3.5A • Simple drive requirement • Low on-resistance • Fast switching speed • Dual P-ch MOSFET package • Pb-free lead plating & halogen-free package Equivalent Circuit MTB60B06Q8 Outline SOP-8 G：Gate S：Source D：D |
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Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package RDSON(TYP) VGS=-10V, ID=-15A VGS=-4.5V, ID=-12A -100V -20A -4.4A 39.5mΩ 45.3mΩ Symbol MTB050P10H8 G：Gate D：Drain S：Sour |
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Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating & Halogen-free package -60V -3.3A 90mΩ (typ) 117mΩ (typ) Equivalent Circuit MTB080P06L3 G：Gate D：Drain S：Source Outline SOT-223 D S D G Ordering Information Device MTB080P06L3 |
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Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET • Single Drive Requirement • Ultra High Speed Switching • Pb-free lead plating and halogen-free package Symbol MTB080P06M3 Outline SOT-89 G：Gate S：Source D：Drain G DD S Ordering Information Device MTB080P06M3-0-T2-G Package SOT-89 (Pb-free lea |
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Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET • Simple drive requirement • Low on-resistance • Small package outline • Pb-free lead plating and halogen-free package Equivalent Circuit MTB080P06N6 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate-Source Volt |
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CYStech |
Dual N-Channel Enhancement Mode Power MOSFET Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, |
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CYStech |
N-Channel Power MOSFET • Simple drive requirement • Low on-resistance • Fast switching characteristic • Pb-free & halogen-free package BVDSS ID @ TA=25°C, VGS=10V RDS(ON)@VGS=10V, ID=4.5A RDS(ON)@VGS=4.5V, ID=3.3A 150V 4.9A 46.5 mΩ(typ) 52 mΩ(typ) Symbol MTB050N15BRQ8 |
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CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • Pb-free lead plating and RoHS compliant package RDSON(TYP) VGS=10V, ID=30A VGS=4.5V, ID=24A 30V 115A 3.8mΩ 6.1mΩ Symbol MTB04N03E3 Outline TO-220 G：Gate |
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CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET • Low On-resistance • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package 30V 115A 3.4mΩ 4.3mΩ Symbol MTB04N03F3 Outline TO-263 G：Gate D：Drain S：Source G DS Ordering Information Device |
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CYStech Electronics |
P-Channel Enhancement Mode Power MOSFET • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package -40V -6.8A -5.4A 31mΩ(typ) 41mΩ(typ) Equivalent Circuit MTB040P04Q8 Outline DD SOP-8 DD G：Gate S：Source D：Drain Pin 1 G SSS |
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CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET • Low on-resistance • Low voltage gate drive • Excellent thermal and electrical capabilities • Pb-free lead plating and halogen-free package Equivalent Circuit MTB030N04N3 Outline SOT-23 D G：Gate S：Source D：Drain S G Ordering Information Device |
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CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET RDSON(TYP) VGS=10V, ID=15A VGS=4.5V, ID=10A • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free lead plating and Halogen-free package 100V 42A 14.3A 9.8mΩ 11.1mΩ Symbol MTB013N10R |
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Desde 2024. D4U Semiconductor.
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