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CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free lead plating and Halogen-free package Symbol MTB04N03H8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source MTB0 |
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CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and halogen-free package Symbol MTB090N06I3 Outline TO-251 G：Gate D：Drain S：Source G DS Ordering Information Device MTB090N |
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CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rating Repetitive Avalanche Rated Pb-free lead plating package Ordering Information Device MTB04N03Q8-0-T3-G MTB04N03Q8-0-TF-G Package SOP-8 (Pb-fre |
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CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • Pb-free lead plating and RoHS compliant package RDSON(TYP) VGS=10V, ID=30A VGS=4.5V, ID=24A 30V 115A 3.8mΩ 6.1mΩ Symbol MTB04N03E3 Outline TO-220 G：Gate |
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CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET • Low On-resistance • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package 30V 115A 3.4mΩ 4.3mΩ Symbol MTB04N03F3 Outline TO-263 G：Gate D：Drain S：Source G DS Ordering Information Device |
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CYStech Electronics |
P-Channel Enhancement Mode Power MOSFET • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package -40V -6.8A -5.4A 31mΩ(typ) 41mΩ(typ) Equivalent Circuit MTB040P04Q8 Outline DD SOP-8 DD G：Gate S：Source D：Drain Pin 1 G SSS |
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CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET • Low on-resistance • Low voltage gate drive • Excellent thermal and electrical capabilities • Pb-free lead plating and halogen-free package Equivalent Circuit MTB030N04N3 Outline SOT-23 D G：Gate S：Source D：Drain S G Ordering Information Device |
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CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET RDSON(TYP) VGS=10V, ID=15A VGS=4.5V, ID=10A • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free lead plating and Halogen-free package 100V 42A 14.3A 9.8mΩ 11.1mΩ Symbol MTB013N10R |
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CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and halogen-free package Symbol MTB010N06I3 Outline TO-251 G：Gate D：Drain S：Source G DS Ordering Information Device Packag |
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CYStech Electronics |
N- AND P-Channel Enhancement Mode MOSFET • Simple drive requirement • Low on-resistance • Fast switching speed • ESD protected gate • Common drain structure • Pb-free lead plating and halogen-free package Ordering Information Device MTB20C06KQ8-0-T3-G MTB20C06KQ8-0-TF-G Package SOP-8 (Pb |
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CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET • Simple drive requirement • Small package outline • Pb-free lead plating and halogen-free package Symbol MTB090N06N3 Outline SOT-23 D G：Gate S：Source D：Drain S G Ordering Information Device MTB090N06N3-0-T1-G Package SOT-23 (Pb-free lead pla |
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CYStech Electronics |
P- & N-Channel Enhancement Mode Power MOSFET • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package N-CH 150V 2.4A 6.8A 172mΩ 178mΩ P-CH -150V -2.0A -5.8A 257mΩ 275mΩ Equivalent Circuit MTBA6C15H8 Outline Pin 1 DFN5×6 Pin 1 G： |
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CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free lead plating and Halogen-free package Symbol MTB03N03H8 Outline Pin 1 EDFN5×6 G：Gate D：Drain S：Source MTB |
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CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free lead plating and halogen-free package Symbol MTB04N03AQ8 Outline Pin 1 SOP-8 G：Gate D：Drain S：Source Ord |
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CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=15A 100V 29A 5.5A 26.4 mΩ(typ) 30.8 |
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CYStech Electronics |
P-Channel Enhancement Mode Power MOSFET RDS(ON)@VGS=-10V, ID=-6A RDS(ON)@VGS=-4.5V, ID=-4A • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • ESD protected gate • RoHS compliant package RDS(ON)@VGS=-4V, ID=-3A -60V -34A -5.9A 21.4 mΩ(typ) |
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CYStech Electronics |
P-Channel Enhancement Mode Power MOSFET • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package Equivalent Circuit MTB032P06V8 Outline Pin 1 DFN3×3 G：Gate S：Source D：Drain Ordering Information Device MTB032P06V8-0-T1-G Pa |
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CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V RDS(ON)@VGS=10V, ID=10A RDS(ON)@VGS=4.5V, ID=8A 100V 10A 10.3 mΩ(typ) 12.3 mΩ(t |
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CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package & Halogen-free package Symbol MTB015N10RI3 Outline TO-251S G：Gate D：Drain S：Source GDS Ordering Information Device MTB015N10RI3-0-U |
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CYStech Electronics |
N-Channel Enhancement Mode Power MOSFET • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • Pb-free lead plating and halogen-free package Symbol MTB04N03J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB04N03J3- |
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Desde 2024. D4U Semiconductor.
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