| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Cystech Electonics |
Low VCE(sat) PNP Epitaxial Planar Transistor • Excellent DC current gain characteristics • Low Saturation Voltage VCE(sat)=-0.3V(typ)(IC=-2A, IB=-100mA). • Complementary to BTD2150N3 • Pb-free package Symbol BTB1424N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta= |
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CYStech |
PNP Transistor |
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CYStech |
PNP Transistor • Low VCE(sat) • Excellent current gain characteristics • Complementary to BTD882J3 • RoHS compliant package Symbol BTB772J3 Outline TO-252AB TO-252AA B：Base C：Collector E：Emitter BCE B CE Absolute Maximum Ratings (Ta=25°C) Parameter Collecto |
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CYStech |
PNP Transistor • Low VCE(sat), typically -0.2 V at IC / IB = -2A / -0.2A • Excellent current gain characteristics • Complementary to BTD882NUT3 • Pb-free lead plating and halogen-free package Symbol BTB772NUT3 Outline TO-126 B：Base C：Collector E：Emitter ECB Or |
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CYStech |
PNP Transistor Low VCE(sat), typically -0.45 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Pb-free lead plating and halogen-free package Symbol BTB772ST3 Outline TO-126 B：Base C：Collector E：Emitter ECB Ordering Information Device BTB |
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Cystech Electonics |
Low Vcesat PNP Epitaxial Planar Transistor • Low VCE(sat), VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A • Excellent DC current gain characteristics • Complementary to BTD2118J3 Symbol BTB1412J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Pa |
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Cystech Electonics Corp |
PNP Transistor • Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A • Excellent current gain characteristics • Complementary to BTD882I3 • RoHS compliant package BVCEO IC RCESAT -30V -3A 150mΩ Symbol BTB772I3 Outline TO-251 B：Base C：Collector E：Emitter B |
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Cystech Electonics Corp |
PNP Transistor • Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.1A • Excellent current gain characteristics • Complementary to BTD882SA3 • Pb-free package Symbol BTB772SA3 Outline TO-92 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) P |
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Cystech Electonics Corp |
PNP Transistor • Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.2A • Excellent current gain characteristics • Complementary to BTD882T3/S • Pb-free package is available Equivalent Circuit BTB772T3/S Outline TO-126 B：Base C：Collector E：Emitter E C B Absolu |
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CYStech |
PNP Transistor • Low VCE(sat) • Excellent current gain characteristics • RoHS compliant and halogen-free package Symbol BTB1184J3S Outline TO-252(DPAK) B：Base C：Collector E：Emitter B CE Ordering Information Device BTB1184J3S-S-T3-G Package TO-252 (RoHS comp |
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CYStech |
PNP Transistor |
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CYStech |
PNP Transistor |
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CYStech |
PNP Transistor |
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CYStech |
PNP Transistor • Excellent DC current gain characteristics • Low Saturation Voltage, VCE(sat)=-0.12V(typ) @IC=-1A, IB=-50mA. • Complementary to BTD2150FP • Pb-free lead plating package Symbol BTB1424FP Outline TO-220FP B：Base C：Collector E：Emitter BCE Absolu |
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CYStech |
PNP Transistor • Low VCE(SAT), VCE(SAT)=-0.21V(typically) at IC=-500mA/IB=-50mA. • Complementary to BTD2444N3. • Pb-free lead plating and halogen-free package Symbol BTB1590N3 Outline SOT-23 B：Base C：Collector E：Emitter Ordering Information Device BTB1590N3-X-T |
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CYStech |
PNP Transistor • High collector current and low VCE(SAT). • Complement to BTD5213L3. • Pb-free lead plating package. Symbol BTB5213L3 Outline SOT-223 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emi |
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CYStech |
PNP Transistor • Low VCE(sat), VCE(sat)=-0.3 V (max), at IC / IB = -2A / -0.1A • Excellent current gain characteristics • Pb-free lead plating package Symbol BTB772AT3 Outline TO-126 B：Base C：Collector E：Emitter ECB Ordering Information Device BTB772AT3-0-BL- |
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CYStech |
PNP Transistor • Low VCE(sat), typically -0.2 V at IC / IB = -2A / -0.2A • Excellent current gain characteristics • Complementary to BTD882NUJ3 • Pb-free lead plating and halogen-free package Symbol BTB772NUJ3 Outline TO-252(DPAK) B：Base C：Collector E：Emitter B |
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CYStech |
PNP Transistor Low VCE(sat), VCE(sat)=-0.15V (typical), at IC / IB = -2A / -0.2A Excellent DC current gain characteristics Wide SOA RoHS compliant package Symbol BTB857T3 Outline TO-126 B：Base C：Collector E：Emitter E CB Ordering Information Device BT |
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CYStech |
PNP Transistor • Low VCE(sat) • Excellent current gain characteristics • Pb-free lead plating and halogen-free package Symbol BTB9435J3 Outline TO-252 (DPAK) B：Base C：Collector E：Emitter B CE Ordering Information Device BTB9435J3-0-T3-G Package TO-252 (Pb-f |
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Desde 2024. D4U Semiconductor.
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