CT Micro H11 Hoja de datos

No.	parte #	Fabricante	Descripción
1	H1153	Micro Quality Semiconductor	High Voltage Diode
2	H11L1	QT Optoelectronics	MICROPROCESSOR COMPLATIBLE CAAS SCHMITT TRIGGER OPTOCOUPLERS
3	D44H11	STMicroelectronics	Complementary power transistors ■ Low collector-emitter saturation voltage ■ Fast switching speed Applications ■ Power amplifier ■ Switching circuits Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose lin
4	H11L1	CT Micro	Schmitt Trigger  High isolation 5000 VRMS  Patented coplanar structure DMC-Isolator®  DC input with Schmitt Trigger output  1MHz(NRZ) data rate  Operating Temperature range - 55 °C to 100 °C  External Creepage ≥ 7.4mm  Distance Through Isolation ≥ 0.4mm  Cle
5	H11A4	CT Micro	Phototransistor Optocoupler  High isolation 5000 VRMS  Patented coplanar structure DMC-Isolator®  DC input with transistor output  Operating Temperature range - 55 °C to 110 °C  External Creepage ≥ 7.4mm  Distance Through Isolation ≥ 0.4mm  Clearance Distance ≥ 7.5mm (S/
6	H11A5	CT Micro	Phototransistor Optocoupler  High isolation 5000 VRMS  Patented coplanar structure DMC-Isolator®  DC input with transistor output  Operating Temperature range - 55 °C to 110 °C  External Creepage ≥ 7.4mm  Distance Through Isolation ≥ 0.4mm  Clearance Distance ≥ 7.5mm (S/
7	MJD44H11	ST Microelectronics	Complementary power transistors ■ Low collector-emitter saturation voltage ■ Fast switching speed ■ Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") Applications ■ Power amplifier ■ Switching circuits Description These devices are manufactured using low v
8	MJB44H11T4-A	STMicroelectronics	Automotive-grade low voltage NPN power transistor • Designed for automotive applications and AEC- Q101 qualified • Low collector-emitter saturation voltage • Fast switching speed Applications • Power amplifier • Switching circuits Description This device is an NPN transistor manufactured using new l
9	H11L2	CT Micro	Schmitt Trigger  High isolation 5000 VRMS  Patented coplanar structure DMC-Isolator®  DC input with Schmitt Trigger output  1MHz(NRZ) data rate  Operating Temperature range - 55 °C to 100 °C  External Creepage ≥ 7.4mm  Distance Through Isolation ≥ 0.4mm  Cle
10	H11L3	CT Micro	Schmitt Trigger  High isolation 5000 VRMS  Patented coplanar structure DMC-Isolator®  DC input with Schmitt Trigger output  1MHz(NRZ) data rate  Operating Temperature range - 55 °C to 100 °C  External Creepage ≥ 7.4mm  Distance Through Isolation ≥ 0.4mm  Cle
11	H11A2	CT Micro	Phototransistor Optocoupler  High isolation 5000 VRMS  Patented coplanar structure DMC-Isolator®  DC input with transistor output  Operating Temperature range - 55 °C to 110 °C  External Creepage ≥ 7.4mm  Distance Through Isolation ≥ 0.4mm  Clearance Distance ≥ 7.5mm (S/
12	H11A3	CT Micro	Phototransistor Optocoupler  High isolation 5000 VRMS  Patented coplanar structure DMC-Isolator®  DC input with transistor output  Operating Temperature range - 55 °C to 110 °C  External Creepage ≥ 7.4mm  Distance Through Isolation ≥ 0.4mm  Clearance Distance ≥ 7.5mm (S/
13	H11B3	CT Micro	Photodarlington Optocoupler  High isolation 5000 VRMS  CTR flexibility available see order information  DC input with transistor output  Temperature range - 55 °C to 100 °C  Regulatory Approvals  UL - UL1577 (E364000)  VDE - EN60747-5-5(VDE0884-5)  CQC – GB4943.1, GB889
14	H11B255	CT Micro	Photodarlington Optocoupler  High isolation 5000 VRMS  CTR flexibility available see order information  DC input with transistor output  Temperature range - 55 °C to 100 °C  Regulatory Approvals  UL - UL1577 (E364000)  VDE - EN60747-5-5(VDE0884-5)  CQC – GB4943.1, GB889
15	H11L3	QT Optoelectronics	MICROPROCESSOR COMPLATIBLE CAAS SCHMITT TRIGGER OPTOCOUPLERS
16	D45H11	STMicroelectronics	Complementary power transistors ■ Low collector-emitter saturation voltage ■ Fast switching speed Applications ■ Power amplifier ■ Switching circuits Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose lin
17	STTH112-Y	STMicroelectronics	Automotive high voltage ultrafast rectifier • Very low conduction losses • Negligible switching losses • Low forward and reverse recovery times • High junction temperature • AEC-Q101 qualified • ECOPACK®2 compliant component Datasheet - production data Description The STTH112-Y, which is usi
18	H11A1	CT Micro	Phototransistor Optocoupler  High isolation 5000 VRMS  Patented coplanar structure DMC-Isolator®  DC input with transistor output  Operating Temperature range - 55 °C to 110 °C  External Creepage ≥ 7.4mm  Distance Through Isolation ≥ 0.4mm  Clearance Distance ≥ 7.5mm (S/
19	H11B1	CT Micro	Photodarlington Optocoupler  High isolation 5000 VRMS  CTR flexibility available see order information  DC input with transistor output  Temperature range - 55 °C to 100 °C  Regulatory Approvals  UL - UL1577 (E364000)  VDE - EN60747-5-5(VDE0884-5)  CQC – GB4943.1, GB889
20	H11B2	CT Micro	Photodarlington Optocoupler  High isolation 5000 VRMS  CTR flexibility available see order information  DC input with transistor output  Temperature range - 55 °C to 100 °C  Regulatory Approvals  UL - UL1577 (E364000)  VDE - EN60747-5-5(VDE0884-5)  CQC – GB4943.1, GB889