CT Micro GP1 Hoja de datos

No.	parte #	Fabricante	Descripción
1	GP10NC60KD	STMicroelectronics	short-circuit rugged IGBT ■ Lower on voltage drop (VCE(sat)) ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode ■ Short-circuit withstand time 10µs Description This IGBT utilizes the advanced PowerMESH™ process re
2	GP160306-CSC3	CT Micro	SMD Type Green Emitter  Side view 0602 package  Viewing Angle = 600  Compatible with infrared and vapor phase reflow solder process  High reliability  Ultra bright Green  RoHS compliance Applications  Optical indicator.  Switch and Symbol Display. GP160306-CSC3 S
3	RGP10G	Micro Commercial Components	1.0 Amp Glass Passivated Junction Fast Recovery Rectifiers 50 to 1000 Volts omponents 21201 Itasca Street Chatsworth !"# $ % !"# RGP10A THRU RGP10M 1.0 Amp Glass Passivated Junction Fast Recovery Rectifiers 50 to 1000 Volts DO-41 • • • • • High temperature me
4	STGP10NC60HD	ST Microelectronics	N-CHANNEL IGBT ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode Applications ■ High frequency motor controls ■ SMPS and PFC in both hard switch and resonant topologies ■
5	STGP10NC60S	ST Microelectronics	Fast IGBT ■ ■ ■ Very low on-voltage drop (VCE(sat)) Minimum power losses at 5 kHz in hard switching Optimized performance for medium operating frequencies 1 3 1 2 3 Application ■ Medium frequency motor control DPAK TO-220 Description This IGBT utilizes
6	GP15	Micro Commercial Components	1.5 Amp Glass Passivated Junction Rectifiers 50 to 1000 Volts omponents 21201 Itasca Street Chatsworth !"# $ % !"# GP15A THRU GP15M 1.5 Amp Glass Passivated Junction Rectifiers 50 to 1000 Volts DO-15 • • • • High temperature metallurgically bond
7	GP15D	Micro Commercial Components	1.5 Amp Glass Passivated Junction Rectifiers 50 to 1000 Volts omponents 21201 Itasca Street Chatsworth !"# $ % !"# GP15A THRU GP15M 1.5 Amp Glass Passivated Junction Rectifiers 50 to 1000 Volts DO-15 • • • • High temperature metallurgically bond
8	GP15J	Micro Commercial Components	1.5 Amp Glass Passivated Junction Rectifiers 50 to 1000 Volts omponents 21201 Itasca Street Chatsworth !"# $ % !"# GP15A THRU GP15M 1.5 Amp Glass Passivated Junction Rectifiers 50 to 1000 Volts DO-15 • • • • High temperature metallurgically bond
9	GP15M	Micro Commercial Components	1.5 Amp Glass Passivated Junction Rectifiers 50 to 1000 Volts omponents 21201 Itasca Street Chatsworth !"# $ % !"# GP15A THRU GP15M 1.5 Amp Glass Passivated Junction Rectifiers 50 to 1000 Volts DO-15 • • • • High temperature metallurgically bond
10	STGP18N40LZ	STMicroelectronics	Automotive-grade 390V internally clamped IGBT • Designed for automotive applications and AEC-Q101 qualified • 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH • ESD gate-emitter protection • Gate-collector high voltage clamping • Logic level gate drive • Low saturation voltage • High pulsed cu
11	RGP10B	Micro Commercial Components	1.0 Amp Glass Passivated Junction Fast Recovery Rectifiers 50 to 1000 Volts omponents 21201 Itasca Street Chatsworth !"# $ % !"# RGP10A THRU RGP10M 1.0 Amp Glass Passivated Junction Fast Recovery Rectifiers 50 to 1000 Volts DO-41 • • • • • High temperature me
12	RGP15J	Micro Commercial Components	1.5 Amp Glass Passivated Junction Fast Recovery Rectifiers 50 to 1000 Volts omponents 21201 Itasca Street Chatsworth !"# $ % !"# RGP15A THRU RGP15M 1.5 Amp Glass Passivated Junction Fast Recovery Rectifiers 50 to 1000 Volts DO-15 • • • • High temperature metal
13	STGP10NC60KD	STMicroelectronics	600V short-circuit rugged IGBT • Lower on voltage drop (VCE(sat)) • Lower Cres / Cies ratio (no cross-conduction susceptibility) • Very soft ultra fast recovery antiparallel diode • Short-circuit withstand time 10 μs Applications • High frequency motor controls • SMPS and
14	STGP10NB60SDFP	ST Microelectronics	N-CHANNEL IGBT actor Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C) Storage Temperature Max. Operating Junction Temperature Value 600 20 ± 20 20 10 80 30 0.2 2500 –65 to 150 175 Unit V V V A A A W W/°C V °C °C (q ) Pulse width limited by safe operating ar
15	STGP10NB37LZ	ST Microelectronics	IGBT ■ Low threshold voltage ■ Low on-voltage drop ■ Low gate charge ■ High current capability ■ High voltage clamping feature Applications ■ Automotive ignition Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trad
16	GP1A05A5	Sharp Microelectronics	Opic Photointerrupter With Connector
17	STGP10NC60H	ST Microelectronics	N-CHANNEL IGBT Type STGP10NC60H ■ ■ ■ VCES 600V IC VCE(sat) (Max)@ 25°C @100°C < 2.5V 10A Low on-voltage drop (Vcesat) Low CRES / CIES ratio (no cross-conduction susceptbility) Very soft ultra fast recovery antiparallel diode TO-220 3 1 2 Description Using the
18	STGP19NC60W	STMicroelectronics	19 A - 600 V - ultra fast IGBT ■ High frequency operation ■ Low CRES / CIES ratio (no cross-conduction susceptibility) Applications ■ High frequency motor controls, inverters, UPS ■ HF, SMPS and PFC in both hard switch and resonant topologies Description This IGBT utilizes the adv
19	GP10NB37LZ	STMicroelectronics	internally clamped IGBT ■ Low threshold voltage ■ Low on-voltage drop ■ Low gate charge ■ High current capability ■ High voltage clamping feature Applications ■ Automotive ignition Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trad
20	HRGP160406-PCSC3	CT Micro	Dual Wavelength SMD Type Emitter  Side view 0602 package  Viewing Angle = 650  Compatible with infrared and vapor phase reflow solder process  High reliability  Dual dominant wavelength (R=620nm , G=520nm)  RoHS compliance Applications  General lighting  Indoor signage disp