| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤4.5mΩType4mΩ) l High Power and Current Handing Capability l Low Reverse transfer Capacitances(Typical:480pF) l 100% Single Pulse avalanche energy Test Applications： UPS,Inverter,Lighting. Absolute（Tc= 25℃ |
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Huajing |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤3.5mΩ) l Low Gate Charge (Typical Data:75nC) l Low Reverse transfer capacitances(Typical:800pF) l 100% Single Pulse avalanche energy Test Applications： UPS,Inverter,Lighting. Absolute（Tc= 25℃ unless otherw |
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HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET Fast Switching Low Gate Charge Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： VDSS ID PD(TC=2 |
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Semico |
Dynamic LED controller RID 。，， ，，，/“ON”； ，。‘00’, 1， 7GRIDs，10SEGs ，。 ：2011-03-A 2 11 MOS MSB LSB 0 0 - - - - b1 b0 00：4GRIDs,13SEGs 01：5GRIDs,12SEGs 10：6GRIDs,11SEGs 11：7GRIDs,10SEGs CS1628 2.2.3.1 ， ，。‘01’, 0， 。 MSB LSB 0 1 - - b3 b2 b1 b0 00： 10： |
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Semico |
VFD display driver |
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STMicroelectronics |
Overvoltage protected AC switch Enables equipment to meet IEC 61000-4-5 surge with overvoltage crowbar technology High noise immunity against static dV/dt and IEC 61000-4-4 burst Needs no external protection snubber or varistor Reduces component count by up to 80% and Inter |
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I-CORE |
LED driver controller |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Trench FET Power MOSFET l Low ON Resistance(Rdson≤5.3mΩ) l Low Gate Charge (Typical Data:68nC) l Low Reverse transfer capacitances(Typical:300pF) l 100% Single Pulse avalanche energy Test Applications： UPS,DC Motor Control and Class D Amplifier. |
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JILIN SINO-MICROELECTRONICS |
N-CHANNEL MOSFET zLow gate charge zLow Crss (typical 235pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes Marking JCS1404C-O-C-N-B JCS1404F-O-F-N-B JCS1404C JCS1404F Package TO-220C TO-220MF Hal |
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IDT |
LOW EMI CLOCK GENERATOR • Pin and function compatible to Cypress W180-53 • Packaged in 8-pin SOIC • Provides a spread spectrum output clock • Accepts a clock input and provides same frequency dithered output • Input frequency of 15 to 28 MHz • Peak reduction by 7dB - 14dB t |
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Galaxy Power |
16 Pin Quicksaver Charge Controller For Ni-cd & Ni-mh Batteries • • Charge termination methods include: Voltage slope Charge timers Four stage charge sequence: Soft start charge Fast charge Topping charge Maintenance charge Reverse-pulse charging available in all charge stages Nine programmable charge rates betwe |
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Integrated Circuit Systems |
Charge Controller |
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HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： l Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： 650 V 10 A 62 W 0.62 Ω Symb |
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SMSC Corporation |
USB Port Power Controller Datasheet General Description The UCS1001 provides a USB port power switch for precise control of up to 2.5 amperes continuous current with over-current limit (OCL), dynamic thermal management, latch or auto-recovery (low test current) fault handli |
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GSW |
LCD drive control |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤10.5Ω) l Low Gate Charge (Typical Data:4.7nC) l Low Reverse transfer capacitances(Typical:2.9pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤15Ω) l Low Gate Charge (Typical Data:6.7nC) l Low Reverse transfer capacitances(Typical:2.6pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（T |
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BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 600 V ID(Tc=25℃) 9.5 A ID(Tc=100℃) 5.7 A IDM 38 A VGSS ±20 V EAS 700 mJ EAR 15.6 mJ IAR 9.5 A RθJC 2.5 ℃/W RθJA 62.5 ℃/W |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Trench FET Power MOSFET l Low ON Resistance(Rdson≤5.3mΩ) l Low Gate Charge (Typical Data:68nC) l Low Reverse transfer capacitances(Typical:300pF) l 100% Single Pulse avalanche energy Test Applications： UPS,DC Motor Control and Class D Amplifier. |
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Integrated Circuit Systems |
User Programmable Differential Output Graphics Clock Generator • • • • • • Supports high-resolution graphics - CLK output to 180 MHz Eliminates need for multiple ECL output crystal oscillators Fully programmable synthesizer capability - not just a clock multiplier Available in 20-pin 300-mil wide body SOIC packa |
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Desde 2024. D4U Semiconductor.
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