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RF Power N-Channel Enhancement-Mode Lateral MOSFET |
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28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET cations subject to change without notice http://www.cree.com/ UGF27025 Rev. 1 UGF27025 Maximum Ratings Rating Drain to Source Voltage, Gate connected to Source Gate to Source Voltage o Total Device Dissipation @ Tcase = 70 C o Derate above 70 C Sto |
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26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET |
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Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET ol VDSS VGSS PD Tstg TJ Value 65 +15 to –0.5 65 0.83 -65 to +150 200 Unit Volts Volts Watts W/oC oC oC Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol ΘJC Typical - Unit oC/W Electrical DC Characteristics (TC |
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Desde 2024. D4U Semiconductor.
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