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Cree |
Silicon Carbide Schottky Diode Package • • • • • 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching TO-220-2 PIN 1 PIN 2 Benefits • • • • • Replace Bipolar with Unipolar Re |
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Cree |
Silicon Carbide Schottky Diode Package VRRM = 1200 V IF (TC=135˚C) = 18 A** Qc = 54 nC** • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Switching |
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Cree |
Silicon Carbide Schottky Diode VRRM = 1200 V IF TC<135˚C = 20 A Qc = 96 nC Package • • • • • 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching TO-220-2 PIN 1 PIN 2 B |
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CREE |
Silicon Carbide Schottky Diode • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Switching • • Positive Temperature Coefficient on VF Increased Creepage/Clearance Distance Benef |
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Cree |
Silicon Carbide Schottky Diode Package VRRM = 1200 V IF (TC=135˚C) = 9.5 A Qc = 27 nC • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Switching • Positive Temperature |
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Cree |
Silicon Carbide Schottky Diode Package • • • • • 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF TO-252-2 Benefits • • • • • Replace Bipol |
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Cree |
Silicon Carbide Schottky Diode Package • • • • • • 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive Temperature Coefficient on VF TO-252-2 Benefits • • • |
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Cree |
Silicon Carbide Schottky Diode Package IF (TC=135˚C) = 16 A Qc = 52 nC • • • • • 1200-Volt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF TO-252-2 |
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CREE |
Silicon Carbide Schottky Diode • 1.2-KVolt Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching Behavior • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially N |
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Cree |
Silicon Carbide Schottky Diode • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Rectifiers • |
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Cree |
Silicon Carbide Schottky Diode Package • • • • • • 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive Temperature Coefficient on VF TO-220-2 PIN 1 PIN 2 Benefits • • |
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Cree |
Silicon Carbide Schottky Diode Package • • • • • 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching TO-220-2 PIN 1 PIN 2 Benefits • • • • • Replace Bipolar with Unipolar Re |
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Cree |
Silicon Carbide Schottky Diode VRRM = 1200 V IF = 20 A Qc =130 nC Package • • • • • 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching TO-220-2 PIN 1 PIN 2 Benefits • • • • |
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Cree |
Silicon Carbide Schottky Diode Qc = • • • • • 1.2-KVolt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF Benefits • • • • • Replace Bipolar with Unipolar R |
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Cree |
Silicon Carbide Schottky Diode VRRM = IF; TC<135˚C 1200 V = 54 A 260 nC Qc = Package • • • • • 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching TO-247-3 Benefits • • |
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CREE |
Silicon Carbide Schottky Diode • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Switching • • Positive Temperature Coefficient on VF Increased Creepage/Clearance Distance Benef |
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CREE |
Silicon Carbide Schottky Diode • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Switching • • Positive Temperature Coefficient on VF Increased Creepage/Clearance Distance Benef |
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Cree |
Silicon Carbide Schottky Diode VRRM = IF; TC<135˚C 1200 V = 43 A 192 nC Qc = Package • • • • • 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching TO-247-3 Benefits • • • |
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Desde 2024. D4U Semiconductor.
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