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Comset Semiconductors |
HIGH POWER TRANSISTOR ) IS/B ES/B fT ton ts tf Ratings Test Condition(s) Min 250 7 20 10 5 0.15 10 8 - Typ 0.22 0.5 1.23 0.28 1.45 0.23 Max 1.5 1.5 6 1 60 1 1.5 1.5 1 2 0.5 Unit V V mA mA mA V A A MHz Collector-Emitter Sustaining Voltage IC=200 mA (*) Emitter-Base |
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Comset Semiconductors |
(BUX84 / BUX85) Silicon diffused power transistors free air Value 70 2.5 Unit K/W K/W COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BUX84 – BUX85 ELECTRICAL CHARACTERISTICS (3) TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VCEM= VCESmax VBE=0V B |
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Comset Semiconductors |
HIGH POWER TRANSISTOR E VCE(SAT) VBE(SAT) IS/B ES/B fT ton ts tf Ratings Collector-Emitter Sustaining Voltage (*) Emitter-Base Breakdown Voltage (*) Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain (*) Collector-Emitter saturation |
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Comset Semiconductors |
HIGH POWER TRANSISTOR FE VCE(SAT) VBE(SAT) IS/B ES/B fT ton ts tf Ratings Collector-Emitter Sustaining Voltage (*) Emitter-Base Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain (*) Test Condition(s) IC= 200 mA IC= 0 A, IE= |
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Comset Semiconductors |
VERY HIGH VOLTAGE POWER TRANSISTOR BUX48A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) VEBO Ratings Collector-Emitter Sustaining Voltage (*) Emitter-Base Voltage Test Condition(s) IC= 100 mA IC= 0 IE= 50 mA VCE= 400 V IB= 0 RBE= 10Ω VCE= 450 V IB= 0 RB |
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Comset Semiconductors |
HIGH VOLTAGE FAST SWITCHING erwise noted Symbol VCEO(SUS) ICER ICEO ICES IEBO VCE(SAT) VBE(SAT) ton ts tf Ratings Collector-Emitter Sustaining Voltage (*) Test Condition(s) IC =100 mA Min 700 - Typ 0.5 1.5 0.2 Max 1 8 2 1 6 2 1.5 2 3 1.6 2 1 3 0.8 Unit V mA mA mA mA VCE |
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COMSET |
HIGH POWER NPN TRANSISTOR |
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Comset Semiconductors |
HIGH POWER DISSIPATION TRANSISTOR EB0(SUS) ICEO ICEX IEBO hFE VCE(SAT) VBE(SAT) IS/B fT ton ts tf Ratings Collector-Emitter Sustaining Voltage (*) Emitter-Base Breakdown Voltage (*) Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain (*) Collecto |
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Comset Semiconductors |
HIGH POWER TRANSISTOR (SAT) VBE(SAT) IS/B fT ton ts tf Ratings Collector-Emitter Sustaining Voltage (*) Emitter-Base Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain (*) Collector-Emitter saturation Voltage (*) Base-Emitter |
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Comset Semiconductors |
HIGH POWER TRANSISTOR ted Symbol VCEO(SUS) VEB0 ICEO ICEX IEBO hFE VCE(SAT) VBE(SAT) IS/B ES/B fT ton ts tf Ratings Collector-Emitter Sustaining Voltage (*) Emitter-Base Voltage Collector Cutoff Current Test Condition(s) IC=200 mA Min 125 7 15 8 4 1 15 8 - Typ 0.6 0. |
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Comset Semiconductors |
HIGH VOLTAGE FAST SWITCHING |
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Comset Semiconductors |
VERY HIGH VOLTAGE POWER TRANSISTOR Ratings Collector-Emitter Sustaining Voltage (*) Emitter-Base Voltage Collector Cutoff Current Test Condition(s) IC= 100 mA Min 700 7 15 - Typ - Mx 30 1 0.5 3 1 50 1.5 3 1.5 2 Unit V V mA mA mA V IC= 0A, IE= 50 mA VCE= 700 V, IB= 0A VCE= 1200 |
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Comset Semiconductors |
(BUX84 / BUX85) Silicon diffused power transistors free air Value 70 2.5 Unit K/W K/W COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BUX84 – BUX85 ELECTRICAL CHARACTERISTICS (3) TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VCEM= VCESmax VBE=0V B |
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Desde 2024. D4U Semiconductor.
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