CITC SR5 Hoja de datos

No.	parte #	Fabricante	Descripción
1	SR515	CITC	5A Leaded Type Schottky Barrier Rectifiers • Axial lead type devices for through hole design. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction.
2	CSR5200-A	CITC	Super Low Barrier High Voltage Power Rectifier • Axial lead type devices for through hole design. • Low forward voltage drop. • Excellent high temperature stability. • Fast switching capability. • Suffix "G" indicates Halogen-free part, ex.CSR5200G-A. • Lead-free parts meet environmental standard
3	SR510	CITC	5A Leaded Type Schottky Barrier Rectifiers • Axial lead type devices for through hole design. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction.
4	SR56	CITC	5A Leaded Type Schottky Barrier Rectifiers • Axial lead type devices for through hole design. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction.
5	SR52	CITC	5A Leaded Type Schottky Barrier Rectifiers • Axial lead type devices for through hole design. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction.
6	SR520	CITC	5A Leaded Type Schottky Barrier Rectifiers • Axial lead type devices for through hole design. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction.
7	SR54	CITC	5A Leaded Type Schottky Barrier Rectifiers • Axial lead type devices for through hole design. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction.