No. | parte # | Fabricante | Descripción | Hoja de Datos |
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CITC |
N-Channel Enhancement Mode MOSFET • 60V/12A RDS(ON) = 12mΩ (max.) @ VGS= 10V RDS(ON) = 14.5mΩ (max.) @ VGS= 4.5V • Reliable and Rugged. • Lead free and green device available (RoHS compliant). ■ Application • Secondary side synchronous rectification. • DC-DC converter. • Motor contro |
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CITC |
N-Channel Enhancement Mode MOSFET • High speed power switching, logic level • Enhanced body diode dv/dt capability • Enhanced avalanche ruggedness • 100% UIS tested, 100% Rg tested • Lead free, halogen free ■ Application • Synchronous rectification in SMPS • Hard switching and high s |
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CITC |
1A Surface Mount Schottky Barrier Rectifiers • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. |
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CITC |
1A Surface Mount Schottky Barrier Rectifiers • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. |
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CITC |
1A Trench Schottky Rectifiers • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Lead free in compliance with EU RoHS. ■ Outline SMA(D |
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