CITC SK1 Hoja de datos

No.	parte #	Fabricante	Descripción
1	SK110AS	CITC	1A Surface Mount Schottky Barrier Rectifiers • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction.
2	SK14B	CITC	1A Surface Mount Schottky Barrier Rectifiers • Electrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV(SK12B~SK16B). standard >10ΚV(SK110B~SK120B). • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capabilit
3	SK14AS	CITC	1A Surface Mount Schottky Barrier Rectifiers • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction.
4	SK120MAFG	CITC	1A Surface Mount Schottky Barrier Rectifiers • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction.
5	SK115MAFG	CITC	1A Surface Mount Schottky Barrier Rectifiers • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction.
6	SK110MAFG	CITC	1A Surface Mount Schottky Barrier Rectifiers • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction.
7	SK12A	CITC	1A Surface Mount Schottky Barrier Rectifiers • Electrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV(SK12A~SK16A). standard >10ΚV(SK110A~SK120A). • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capabilit
8	SK14A	CITC	1A Surface Mount Schottky Barrier Rectifiers • Electrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV(SK12A~SK16A). standard >10ΚV(SK110A~SK120A). • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capabilit
9	SK15AS	CITC	1A Surface Mount Schottky Barrier Rectifiers • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction.
10	SK16MAFG	CITC	1A Surface Mount Schottky Barrier Rectifiers • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction.
11	SK14MAFG	CITC	1A Surface Mount Schottky Barrier Rectifiers • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction.
12	SK115B	CITC	1A Surface Mount Schottky Barrier Rectifiers • Electrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV(SK12B~SK16B). standard >10ΚV(SK110B~SK120B). • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capabilit
13	SK120B	CITC	1A Surface Mount Schottky Barrier Rectifiers • Electrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV(SK12B~SK16B). standard >10ΚV(SK110B~SK120B). • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capabilit
14	SK110B	CITC	1A Surface Mount Schottky Barrier Rectifiers • Electrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV(SK12B~SK16B). standard >10ΚV(SK110B~SK120B). • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capabilit
15	SK16B	CITC	1A Surface Mount Schottky Barrier Rectifiers • Electrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV(SK12B~SK16B). standard >10ΚV(SK110B~SK120B). • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capabilit
16	SK12B	CITC	1A Surface Mount Schottky Barrier Rectifiers • Electrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV(SK12B~SK16B). standard >10ΚV(SK110B~SK120B). • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capabilit
17	SK120AS	CITC	1A Surface Mount Schottky Barrier Rectifiers • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction.
18	SK115AS	CITC	1A Surface Mount Schottky Barrier Rectifiers • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction.
19	SK16AS	CITC	1A Surface Mount Schottky Barrier Rectifiers • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction.
20	SK12AS	CITC	1A Surface Mount Schottky Barrier Rectifiers • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction.