CITC SB1 Hoja de datos

No.	parte #	Fabricante	Descripción
1	SB1065CT	CITC	10A High Power Schottky Barrier Rectifiers • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix "
2	SB1045CT	CITC	10A High Power Schottky Barrier Rectifiers • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix "
3	2SB1188	CITC	2A General Purpose PNP Transistor • Low VCE(sat) VCE(sat) = -0.5V(Typ.) (IC/IB=-2A/-0.2A). • Complements 2SD1766. • Suffix "G" indicates Halogen-free part, ex.2SB1188G. • Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228 ■ Outline SOT-89 .071(
4	CSB10100CT-A	CITC	Super Low Barrier High Voltage Power Rectifier • Low forward voltage drop. • Excellent high temperature stability. • Fast switching capability. • Suffix "G" indicates Halogen-free part, ex.CSB10100CTG-A. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 ■ Mechanical data • Epox
5	SB1040CT	CITC	10A High Power Schottky Barrier Rectifiers • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix "
6	SB1060CT	CITC	10A High Power Schottky Barrier Rectifiers • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix "