CITC MBR Hoja de datos

No.	parte #	Fabricante	Descripción
1	MBR30100CT	CITC	30A High Power Schottky Barrier Rectifiers ■ Outline • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction
2	MBRB2045CT	CITC	20A Surface Mount High Power Schottky Barrier Rectifiers • Electrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV(ΜΒRΒ2040CT~ΜΒRΒ2065CT). standard >10ΚV(ΜΒRΒ20100CT~ΜΒRΒ20200CT). • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. •
3	MBRF20100CT	CITC	20A High Power Schottky Barrier Rectifiers ■ Outline • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction
4	MBRF10100CT	CITC	10A High Power Schottky Barrier Rectifiers • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix "
5	MBRF2065CT	CITC	20A High Power Schottky Barrier Rectifiers ■ Outline • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction
6	MBR20200	CITC	20A High Power Schottky Barrier Rectifiers ■ Outline • Electrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV(ΜΒR2040~ΜΒR2065). standard >10ΚV(ΜΒR20100~ΜΒR20200). • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. •
7	MBRB30150CT	CITC	30A Surface Mount High Power Schottky Barrier Rectifiers • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix "
8	MBRF2045CT	CITC	20A High Power Schottky Barrier Rectifiers ■ Outline • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction
9	MBRB2040CT	CITC	20A Surface Mount High Power Schottky Barrier Rectifiers • Electrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV(ΜΒRΒ2040CT~ΜΒRΒ2065CT). standard >10ΚV(ΜΒRΒ20100CT~ΜΒRΒ20200CT). • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. •
10	MBRF2045CT-T	CITC	Trench Schottky Rectifier • Low forward voltage drop. • Excellent high temperature stability. • Fast switching capability. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 ■ Mechanical Data • Epoxy : UL94-V0 rated ﬂame retardant. • Case : JEDEC ITO-220AB
11	MBRF10L45CT-T	CITC	Trench Schottky Rectifier • Low forward voltage drop. • Excellent high temperature stability. • Fast switching capability. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 ■ Mechanical Data • Epoxy : UL94-V0 rated ﬂame retardant. • Case : JEDEC ITO-220AB
12	MBR10L100CT-T	CITC	Trench Schottky Rectifier • Low forward voltage drop. • Excellent high temperature stability. • Fast switching capability. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 ■ Mechanical data • Epoxy : UL94-V0 rated flame retardant. • Case : JEDEC TO-220AB
13	MBR20100CT-T	CITC	Trench Schottky Rectifier • Low forward voltage drop. • Excellent high temperature stability. • Fast switching capability. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 ■ Mechanical data • Epoxy : UL94-V0 rated flame retardant. • Case : JEDEC TO-220AB
14	MBRF20100CT-T	CITC	Trench Schottky Rectifier • Low forward voltage drop. • Excellent high temperature stability. • Fast switching capability. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 ■ Mechanical data • Epoxy : UL94-V0 rated flame retardant. • Case : JEDEC ITO-220AB
15	MBR10L60CT-T	CITC	Trench Schottky Rectifier • Low forward voltage drop. • Excellent high temperature stability. • Fast switching capability. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 ■ Mechanical Data • Epoxy : UL94-V0 rated ﬂame retardant. • Case : JEDEC TO-220AB m
16	MBRF2060CT	CITC	20A High Power Schottky Barrier Rectifiers ■ Outline • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction
17	MBR1040	CITC	10A High Power Schottky Barrier Rectifiers ■ Outline • Electrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV(ΜΒR1040~ΜΒR1065). standard >10ΚV(ΜΒR10100~ΜΒR10200). • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. •
18	MBRF10200CT	CITC	10A High Power Schottky Barrier Rectifiers • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix "
19	MBRF3060CT	CITC	30A High Power Schottky Barrier Rectifiers ■ Outline • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction
20	MBRB2060CT	CITC	20A Surface Mount High Power Schottky Barrier Rectifiers • Electrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV(ΜΒRΒ2040CT~ΜΒRΒ2065CT). standard >10ΚV(ΜΒRΒ20100CT~ΜΒRΒ20200CT). • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. •