| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance) 2.4 41.8 31.85 27 2.55 11.8 16.4 0.6 1.8 44.5 34.2 2.85 2.75 12.5 17.5 2 0.75 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 11 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ra |
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Siemens Semiconductor Group |
Silicon Tuning Diode (For UHF-TV-tuners High capacitance ratio Low series inductance) 9 20 16.1 2.4 2.3 7.5 9.8 pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 CT1/C T28 ∆CT/C T 6 8.2 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MH |
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Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance) 2.4 41.8 31.85 27 2.55 11.8 16.4 0.6 1.8 44.5 34.2 2.85 2.75 12.5 17.5 2 0.75 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 11 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ra |
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Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance Low series resistance) T 39 29.4 2.5 2.4 41.8 31.85 2.7 2.55 11.8 16.4 0.6 0.6 44.5 34.2 2.85 2.75 12.5 17.5 2 0.75 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 11 - VR = 2 V, VR = 25 V, f = 1 MHz |
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Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals/ Low forward resistance/ small capacitance small inductance) V I (BR) = 5 µA Reverse current VR = 35 V Forward voltage I F = 100 mA AC characteristics Diode capacitance CT 0.3 0.21 0.09 0.3 - pF VR = 0 V, f = 100 MHz VR = 5 V, f = 1 MHz Case capacitance CC rf f = 1 MHz Forward resistance Ω τrr 1.2 1 75 |
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Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (For UHF-TV-tuners High capacitance ratio Low series inductance Low series resistance) 8 2.07 2 7.2 10 21.5 16.4 2.28 2.2 8.1 11 pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 CT1/C T28 ∆CT/C T 6.3 9 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio VR = 1 V, VR |
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Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance Low series resistance) T 39 29.4 2.5 2.4 41.8 31.85 2.7 2.55 11.8 16.4 0.6 0.6 44.5 34.2 2.85 2.75 12.5 17.5 2 0.75 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 11 - VR = 2 V, VR = 25 V, f = 1 MHz |
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Siemens Semiconductor Group |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance High capacitance ratio) 1 V, f = 1 MHz VR = 2.5 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/C T3 CT1/C T4 rs CC Ls 3 - - VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Series resistance Ω pF nH VR = 1 V, f |
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Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals/ Low forward resistance/ small capacitance small inductance) V I (BR) = 5 µA Reverse current VR = 35 V Forward voltage I F = 100 mA AC characteristics Diode capacitance CT 0.3 0.21 0.09 0.3 - pF VR = 0 V, f = 100 MHz VR = 5 V, f = 1 MHz Case capacitance CC rf f = 1 MHz Forward resistance Ω τrr 1.2 1 75 |
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Siemens Semiconductor Group |
Silicon Tuning Diode (For VHF-TV-tuners High capacitance ratio Low series inductance Low series resistance) 14.7 40 32 3.2 2.9 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 9.8 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio CT1/C T28 13.5 ∆CT/C T - VR = 1 V, VR = 28 V, f = 1 M |
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Siemens Semiconductor Group |
Silicon Tuning Diode (For UHF-TV-tuners High capacitance ratio Low series inductance) |
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Siemens Semiconductor Group |
Silicon Tuning Diode (For VHF-TV-tuners High capacitance ratio Low series inductance Low series resistance) |
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Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (For VHF-TV-tuners High capacitance ratio Low series inductance Low series resistance) 2 2.72 2.55 11.1 15.3 42 33.2 3.05 2.8 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 9.5 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio CT1/C T28 13.5 ∆CT/C T - VR = 1 V |
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Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (For VHF-TV-tuners High capacitance ratio Low series inductance Low series resistance) 2 2.72 2.55 11.1 15.3 42 33.2 3.05 2.8 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 9.5 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio CT1/C T28 13.5 ∆CT/C T - VR = 1 V |
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Siemens Semiconductor Group |
Silicon Tuning Diode (For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series inductance Low series resistance) T 51 39.6 2.6 2.5 56.5 43.4 2.8 2.7 15.5 20.9 0.85 0.6 61.5 47.2 3 2.9 17 23.2 2 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2 /CT25 CT1 /CT28 ∆CT/CT 14.5 18 - - VR = 2 V, VR = 25 V |
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Siemens Semiconductor Group |
Silicon Tuning Diode (For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series inductance Low series resistance) T 51 39.6 2.6 2.5 56.5 43.4 2.8 2.7 15.5 20.9 0.85 0.6 61.5 47.2 3 2.9 17 23.2 2 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2 /CT25 CT1 /CT28 ∆CT/CT 14.5 18 - - VR = 2 V, VR = 25 V |
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ETC |
CIT RELAY • Switching capacity up to 40A @ 14VDC • Small size and light weight • PCB pin mounting available • Suitable for automobile and lamp accessories • Two footprint styles available CTA5 24.0x19.0x20.0mm CONTACT DATA Contact Arrangement Contact Ratin |
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Vishay Siliconix |
Multilayer Ceramic Chip Capacitors LowInductance • Low inductance, typically half the inductance of standard product. • Reduces AC noise in multi-chip modules (MCM). • Low profile, robust device for easy mounting. GENERAL SPECIFICATIONS NOTE: Electrical characteristics @ + 25°C unless otherwise sp |
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Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (For UHF-TV-tuners High capacitance ratio Low series inductance Low series resistance) 8 2.07 2 7.2 10 21.5 16.4 2.28 2.2 8.1 11 pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 CT1/C T28 ∆CT/C T 6.3 9 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio VR = 1 V, VR |
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Siemens Semiconductor Group |
Silicon Tuning Diode (For SAT-indoor-units High capacitance ratio Low series inductance) 2 0.65 5 - pF VR = 1 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 25 V, f = 1 MHz Capacitance ratio CT1/C T25 CT1/C T28 ∆CT/C T 9.7 - - VR = 1 V, VR = 28 V, f = 1 MHz Capacitance ratio 1) % Ω nH VR = |
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Desde 2024. D4U Semiconductor.
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