CENTRONIC OSD Hoja de datos

No.	parte #	Fabricante	Descripción
1	OSD7.5-5T	CENTRONIC	(OSDxx-5T) General Purpose Silicon Sensors 0.21 0.21 0.21 Dark Current (nA) NEP WHz-½ λ = 436 nm Typ. Capacitance pF Shunt Resistance Meg. ohms Min. 250 100 100 60 50 20 5 3 2 1 Typ. 1000 700 600 300 200 100 25 12 15 5 7 9 9 10 12 20 26 30 45 125 1 1 3 3 3 8 / 23 9 9 13 15 Risetime ns λ = 820
2	OSD1-5T	CENTRONIC	(OSDxx-5T) General Purpose Silicon Sensors 0.21 0.21 0.21 Dark Current (nA) NEP WHz-½ λ = 436 nm Typ. Capacitance pF Shunt Resistance Meg. ohms Min. 250 100 100 60 50 20 5 3 2 1 Typ. 1000 700 600 300 200 100 25 12 15 5 7 9 9 10 12 20 26 30 45 125 1 1 3 3 3 8 / 23 9 9 13 15 Risetime ns λ = 820
3	OSD3-5T	CENTRONIC	(OSDxx-5T) General Purpose Silicon Sensors 0.21 0.21 0.21 Dark Current (nA) NEP WHz-½ λ = 436 nm Typ. Capacitance pF Shunt Resistance Meg. ohms Min. 250 100 100 60 50 20 5 3 2 1 Typ. 1000 700 600 300 200 100 25 12 15 5 7 9 9 10 12 20 26 30 45 125 1 1 3 3 3 8 / 23 9 9 13 15 Risetime ns λ = 820
4	OSD5-5T	CENTRONIC	(OSDxx-5T) General Purpose Silicon Sensors 0.21 0.21 0.21 Dark Current (nA) NEP WHz-½ λ = 436 nm Typ. Capacitance pF Shunt Resistance Meg. ohms Min. 250 100 100 60 50 20 5 3 2 1 Typ. 1000 700 600 300 200 100 25 12 15 5 7 9 9 10 12 20 26 30 45 125 1 1 3 3 3 8 / 23 9 9 13 15 Risetime ns λ = 820
5	OSD15-5T	CENTRONIC	(OSDxx-5T) General Purpose Silicon Sensors 0.21 0.21 0.21 Dark Current (nA) NEP WHz-½ λ = 436 nm Typ. Capacitance pF Shunt Resistance Meg. ohms Min. 250 100 100 60 50 20 5 3 2 1 Typ. 1000 700 600 300 200 100 25 12 15 5 7 9 9 10 12 20 26 30 45 125 1 1 3 3 3 8 / 23 9 9 13 15 Risetime ns λ = 820
6	OSD35-5T	CENTRONIC	(OSDxx-5T) General Purpose Silicon Sensors 0.21 0.21 0.21 Dark Current (nA) NEP WHz-½ λ = 436 nm Typ. Capacitance pF Shunt Resistance Meg. ohms Min. 250 100 100 60 50 20 5 3 2 1 Typ. 1000 700 600 300 200 100 25 12 15 5 7 9 9 10 12 20 26 30 45 125 1 1 3 3 3 8 / 23 9 9 13 15 Risetime ns λ = 820
7	OSD50-5T	CENTRONIC	(OSDxx-5T) General Purpose Silicon Sensors 0.21 0.21 0.21 Dark Current (nA) NEP WHz-½ λ = 436 nm Typ. Capacitance pF Shunt Resistance Meg. ohms Min. 250 100 100 60 50 20 5 3 2 1 Typ. 1000 700 600 300 200 100 25 12 15 5 7 9 9 10 12 20 26 30 45 125 1 1 3 3 3 8 / 23 9 9 13 15 Risetime ns λ = 820
8	OSD60-5T	CENTRONIC	(OSDxx-5T) General Purpose Silicon Sensors 0.21 0.21 0.21 Dark Current (nA) NEP WHz-½ λ = 436 nm Typ. Capacitance pF Shunt Resistance Meg. ohms Min. 250 100 100 60 50 20 5 3 2 1 Typ. 1000 700 600 300 200 100 25 12 15 5 7 9 9 10 12 20 26 30 45 125 1 1 3 3 3 8 / 23 9 9 13 15 Risetime ns λ = 820
9	OSD100-5T	CENTRONIC	(OSDxx-5T) General Purpose Silicon Sensors 0.21 0.21 0.21 Dark Current (nA) NEP WHz-½ λ = 436 nm Typ. Capacitance pF Shunt Resistance Meg. ohms Min. 250 100 100 60 50 20 5 3 2 1 Typ. 1000 700 600 300 200 100 25 12 15 5 7 9 9 10 12 20 26 30 45 125 1 1 3 3 3 8 / 23 9 9 13 15 Risetime ns λ = 820
10	OSD1-E	CENTRONIC	Silicon Photodetectors
11	OSD3-E	CENTRONIC	Silicon Photodetectors
12	OSD5-E	CENTRONIC	Silicon Photodetectors
13	OSD7.5-E	CENTRONIC	Silicon Photodetectors
14	OSD15-E	CENTRONIC	Silicon Photodetectors
15	OSD50-E	CENTRONIC	Silicon Photodetectors
16	OSD60-E	CENTRONIC	Silicon Photodetectors
17	OSD100-E	CENTRONIC	Silicon Photodetectors