| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Central Semiconductor |
NPN Transistor |
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Central Semiconductor |
NPN Transistor |
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Central Semiconductor |
POWER TRANSISTOR |
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Central Semiconductor |
POWER TRANSISTOR BVCEO IC=50mA (MJE700T,701T,800T,801T) 60 VCE(SAT) IC=1.5A, IB=30mA (MJE700T,702T,800T,802T) VCE(SAT) IC=2.0A, IB=40mA (MJE701T,703T,801T,803T) VCE(SAT) IC=4.0A, IB=40mA VBE(ON) VCE=3.0V, IC=1.5A (MJE700T,702T,800T,802T) VBE(ON) VCE=3.0V, I |
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Central Semiconductor |
NPN Transistor |
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Central Semiconductor |
POWER TRANSISTOR |
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Central Semiconductor |
POWER TRANSISTOR |
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Central Semiconductor |
POWER TRANSISTOR |
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Central Semiconductor |
(MJE250 - MJE254 / MJE240 - MJE244) COMPLEMENTARY SILICON POWER TRANSISTORS |
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Central Semiconductor |
(MJE250 - MJE254 / MJE240 - MJE244) COMPLEMENTARY SILICON POWER TRANSISTORS |
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Central Semiconductor |
(MJE250 - MJE254 / MJE240 - MJE244) COMPLEMENTARY SILICON POWER TRANSISTORS |
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Central Semiconductor |
NPN SILICON POWER TRANSISTOR E13004) VCE=700V, VBE(OFF)=1.5V (MJE13005) VCE=700V, VBE(OFF)=1.5V, TC=100°C (MJE13005) VEB=9.0V IC=10mA (MJE13004) IC=10mA (MJE13005) IC=1.0A, IB=0.2A IC=2.0A, IB=0.5A IC=4.0A, IB=1.0A IC=2.0A, IB=0.5A, TC=100°C IC=1.0A, IB=0.2A IC=2.0A, IB=0.5A IC= |
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Central Semiconductor |
POWER TRANSISTOR |
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CENTRAL SEMICONDUCTOR |
NPN SILICON POWER TRANSISTOR C=10mA IC=1.0A, IB=0.2A IC=2.0A, IB=0.5A IC=4.0A, IB=1.0A IC=1.0A, IB=0.2A IC=2.0A, IB=0.5A VCE=5.0V, IC=1.0A VCE=5.0V, IC=2.0A 400 10 8.0 MAX 1.0 5.0 1.0 0.5 0.6 1.0 1.2 1.6 60 40 UNITS mA mA mA V V V V V V (Continued) R1 MJE13005 ELECTRICAL |
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Central Semiconductor |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS JE700,701,800,801) 60 VCE(SAT) IC=1.5A, IB=30mA (MJE700,702,800,802) VCE(SAT) IC=2.0A, IB=40mA (MJE701,703,801,803) VCE(SAT) IC=4.0A, IB=40mA VBE(ON) VCE=3.0V, IC=1.5A (MJE700,702,800,802) VBE(ON) VCE=3.0V, IC=2.0A (MJE701,703,801,803) VBE(O |
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Central Semiconductor |
Transistor JE700,701,800,801) 60 VCE(SAT) IC=1.5A, IB=30mA (MJE700,702,800,802) VCE(SAT) IC=2.0A, IB=40mA (MJE701,703,801,803) VCE(SAT) IC=4.0A, IB=40mA VBE(ON) VCE=3.0V, IC=1.5A (MJE700,702,800,802) VBE(ON) VCE=3.0V, IC=2.0A (MJE701,703,801,803) VBE(O |
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Central Semiconductor |
Transistor JE700,701,800,801) 60 VCE(SAT) IC=1.5A, IB=30mA (MJE700,702,800,802) VCE(SAT) IC=2.0A, IB=40mA (MJE701,703,801,803) VCE(SAT) IC=4.0A, IB=40mA VBE(ON) VCE=3.0V, IC=1.5A (MJE700,702,800,802) VBE(ON) VCE=3.0V, IC=2.0A (MJE701,703,801,803) VBE(O |
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Central Semiconductor |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS JE700,701,800,801) 60 VCE(SAT) IC=1.5A, IB=30mA (MJE700,702,800,802) VCE(SAT) IC=2.0A, IB=40mA (MJE701,703,801,803) VCE(SAT) IC=4.0A, IB=40mA VBE(ON) VCE=3.0V, IC=1.5A (MJE700,702,800,802) VBE(ON) VCE=3.0V, IC=2.0A (MJE701,703,801,803) VBE(O |
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Central Semiconductor |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS JE700,701,800,801) 60 VCE(SAT) IC=1.5A, IB=30mA (MJE700,702,800,802) VCE(SAT) IC=2.0A, IB=40mA (MJE701,703,801,803) VCE(SAT) IC=4.0A, IB=40mA VBE(ON) VCE=3.0V, IC=1.5A (MJE700,702,800,802) VBE(ON) VCE=3.0V, IC=2.0A (MJE701,703,801,803) VBE(O |
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Central Semiconductor |
SILICON NPN TRANSISTORS |
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Desde 2024. D4U Semiconductor.
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