CDIL CSD Hoja de datos

No.	parte #	Fabricante	Descripción
1	CSD1133	CDIL	(CSD1133 / CSD1134) PNP / NPN PLASTIC POWER TRANSISTORS 1 A; VCE = 4 V All diminsions in mm. Data Sheet K VCBO VCEO IC Ptot Tj VCEsat hFE RATINGS (at TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (o
2	CSD1047F	CDIL	TO-3P Fully Isolated Plastic Package Transistor 60 6.0 VCE(sat) VBE (on) hFE fT Co IC=5A, IB=0.5A IC=1A, VCE= 5V IC=1A,VCE=5V ** IC=6A,VCE=5V IC=1A,VCE=5V VCB E MAX 12 15 90 150 UNIT V V V A A W ºC ºC MAX 0.1 0.1 UNIT mA mA V V V Base Emitter on Voltage DC Current Gain Transition frequency O
3	CSD1047	CDIL	TO-3P Fully Isolated Plastic Package Transistor
4	CSD880	CDIL	Audio Frequency Power Amplifier cy Cob VCB=10V, IE=0 70 Collector Output Capacitance f=1MHz Switching Time ton VCC=30V, 0.8 Turn-0n Time tstg IB1=IB2=0.2A, 1.5 Storage Time tf Pulse Width=20us 0.8 Fall Time Duty Cycle=1% hFE CLASSIFICATION:O : 60 -120, Y : 100 -200, GR : 150-300 UN
5	CSD655	CDIL	NPN EPITAXIAL PLANAR SILICON TRANSISTOR ,VCE=1V 250 DC Current Gain Dynamic Characteristics ft VCE=1V,IC=150mA, 250 Transition Frequency Cob VCB=10V, IE=0 Collector Out-put Capacitance f=1MHz Cib VEB=0.5V, IC=0 In-put Capacitance f=1MHz hFE CLASSIFICATION D : 250-500; E : 300-800; F : 600-
6	CSD401	CDIL	NPN PLASTIC POWER TRANSISTOR ) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) VCBO VCEO VEBO max. max. max. 200 V 150 V 5.0 V Continental Device India Limited Data Sheet Page 1 of 3 CSD401
7	CSD545	CDIL	NPN SILICON EPITAXIAL TRANSISTOR 5 to +150 UNIT V V V A A mW ºC TYP MAX UNIT V V V µA µA 60 30 0.85 0.1 Base Emitter Saturation Voltage Collector Emitter Saturation Voltage VBE(sat)* IC=500mA,IB=50mA VCE(sat)* IC=500mA,IB=50mA 1.2 0.3 V V ELECTRICAL CHARACTERISTICS (Ta=25ºC
8	CSD1134	CDIL	(CSD1133 / CSD1134) PNP / NPN PLASTIC POWER TRANSISTORS 1 A; VCE = 4 V All diminsions in mm. Data Sheet K VCBO VCEO IC Ptot Tj VCEsat hFE RATINGS (at TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (o
9	CSD313	CDIL	PNP / NPN PLASTIC POWER TRANSISTOR pen collector) All dim insions in m m . K VCBO VCEO IC Ptot Tj VCEsat hFE max. max. max. max. max. max. min max. 60 60 3.0 30 150 V V A W °C 1.0 V 40 320 VCBO VCEO VEBO max. max. max. 60 V 60 V 5.0 V Continental Device India Limited Data
10	CSD471A	CDIL	NPN SILICON PLANAR EPITAXIAL TRANSISTOR amic Characteristics Transition Frequency ft VCE=6V, IC=10mA, - Output Capacitance Cob VCB=6V, IE=0 - f=1MHz TYP - 130 16 MAX - 0.1 400 0.5 1.2 - hFE* Classification : O : 70-140; Y : 120-240; G : 200-400; UNIT V V V A mW deg C deg C UN
11	CSD882	CDIL	Audio Frequency Power Amplifier E =1mA Saturation Voltages VCE (sat)* IC=2A, IB=0.2A VBE (sat)* IC=2A, IB=0.2A IC=20mA,VCE=2V hFE* DC Current Gain IC=1A,VCE=2V** hFE* Output Capacitance at f=1MHz Transition Frequency * Pulse test : pulse width <350µs ; duty cycle <2% **hFE classifi
12	CSD600	CDIL	PNP PLASTIC POWER TRANSISTORS max. 100 max. 100 120 V 120 V Continental Device India Limited Data Sheet www.DataSheet4U www.DataSheet4U.com 4U.com Page 1 of 3 www.DataSheet4U.com CSB631, CSB631K CSD600, CSD600K Emitter-base voltage (open collector) Collector current Colle
13	CSD600K	CDIL	PNP PLASTIC POWER TRANSISTORS max. 100 max. 100 120 V 120 V Continental Device India Limited Data Sheet www.DataSheet4U www.DataSheet4U.com 4U.com Page 1 of 3 www.DataSheet4U.com CSB631, CSB631K CSD600, CSD600K Emitter-base voltage (open collector) Collector current Colle
14	CSD667	CDIL	NPN EPITAXIAL PLANAR SILICON TRANSISTOR A,VCE=5V 60-320 60-200 DC Current Gain IC=500mA,VCE=5V >30 >30 VCE(Sat) IC=500mA,IB=50mA <1.0 <1.0 Collector Emitter Saturation Voltage VBE IC=150mA,VCE=5V <1.5 <1.5 Base to Emitter Voltage Dynamic Characteristics ft IC=150mA,VCE=5V** typ140
15	CSD1833	CDIL	NPN SILICON EPITAXIAL POWER TRANSISTOR tter Saturation Voltage hFE IC=1A, VCE=5V DC Current Gain Dynamic Characteristics Transition Frequency ft Collector Output Capacitance Cob hFE CLASSIFICATION MARKING **Pulse Test VCB=10V, IE=0 f=1MHz D : 60-120; E : 100-200, CSD 1833E VCE=5V,IC=5
16	CSD863	CDIL	EPITAXIAL PLANAR SILICON TRANSISTORS E=2V IC=500mA, IB=50mA NPN PNP Base Emitter Saturation Voltage VBE (sat) IC=500mA, IB=50mA MIN 60 50 5.0 60 30 DYNAMIC CHARACTERISTICS Transition Frequency Output Capacitance fT VCE=10V, IC=50mA Cob VCB=10V,IE=0, f=1MHz NPN PNP CLASSIFICATION