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CDIL |
COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS 50 70 40 typ max 1.0 1.0 240 0.5 1.2 V V UNIT V µA µA fT Cob IC=500mA, VCE=2V IE=0, VCB=10V,f=1MHz PNP NPN Y 120 - 240 100 40 30 0.1 1.0 0.1 - MHz PF PF Switching Time Turn on Time Storage Time Fall Time Classification hFE* ton tstg tf VCC= |
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CDIL |
Low Frequency Amplifier IE=10µA, IC=0 VCB=20V, IE = 0 VCE=3V,IC=10mA VCE=3V,IC=500mA 4.0 VCE(sat)* * IC=150mA,IB=15mA VBE (on) B 60-120 IC=10mA, VCE=3V C 100-200 0.64 D 160-320 V Continental Device India Limited Data Sheet Page 1 of 3 CSC1213 CSC1213A TO-92 Plas |
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CDIL |
NPN SILICON POWER TRANSISTOR ut Capacitance f=1MHz *hFE Classification : R : 55-110, O : 80-160 UNIT V V V A A W deg C MAX 5.0 5.0 160 3.0 1.5 - UNIT uA uA V V V MHz pF Continental Device India Limited Data Sheet Page 1 of 2 TO-3P (TO-218) Plastic Package A D B C DIM A B |
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CDIL |
PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS .7 Collector Emitter Saturation Voltage VCE(Sat)* IC=200mA,IB=20mA VBE(Sat) * IC=200mA,IB=20mA <1.1 <1.1 Base Emitter Saturation Voltage DYNAMIC CHARACTERISTICS Transition Frequency Out-Put Capacitance UNIT V V V mA mW deg C UNIT V V V nA nA nA V V |
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CDIL |
NPN EPITAXIAL SILICON POWER TRANSISTOR = 1mA, f=10.7MHz VCB =6V, - IE = 1mA, f=100 MHz VCB =6V, - IE = 1mA, f=100 MHz 20 5 MIN 30 3 40 450 0.72 1 260 MHz V pF dB dB TYP MAX UNITS V V *hFE Classifications B : 40 - 110 C : 65 - 160 D : 100 - 260 Continental Device India Limited Data S |
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CDIL |
NPN EPITAXIAL SILICON POWER TRANSISTOR (open collector) Collector current Collector current (Peak) Total power dissipation up to TA = 25 C Total power dissipation up to T C = 25 C Junction temperature Storage temperature CHARACTERISTICS T amb = 25 C unless otherwise specified Collector c |
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CDIL |
COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS 50 70 40 typ max 1.0 1.0 240 0.5 1.2 V V UNIT V µA µA fT Cob IC=500mA, VCE=2V IE=0, VCB=10V,f=1MHz PNP NPN Y 120 - 240 100 40 30 0.1 1.0 0.1 - MHz PF PF Switching Time Turn on Time Storage Time Fall Time Classification hFE* ton tstg tf VCC= |
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CDIL |
NPN SILICON HIGH VOLTAGE TRANSISTOR |
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CDIL |
Low Frequency Amplifier IE=10µA, IC=0 VCB=20V, IE = 0 VCE=3V,IC=10mA VCE=3V,IC=500mA 4.0 VCE(sat)* * IC=150mA,IB=15mA VBE (on) B 60-120 IC=10mA, VCE=3V C 100-200 0.64 D 160-320 V Continental Device India Limited Data Sheet Page 1 of 3 CSC1213 CSC1213A TO-92 Plas |
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CDIL |
PNP/NPN COMPLEMENTARY SILICON EPITAXIAL TRANSISTOR |
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CDIL |
NPN EPITAXIAL PLANAR SILICON TRANSISTOR hFE VCE=2V, IC=0.1A 120 DC Current Gain VCE(Sat) IC=2A, IB=0.1A Collector Emitter Saturation Voltage Dynamic Characteristics ft VCE=2V, IC=0.5A, Transition Frequency f=100MHz Cob VCB=10V, IE=0 Collector Output Capacitance f=1MHz Hfe Classifications |
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CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR 0µA,IE=0 IE=10µA, IC=0 VCB=18V, IE = 0 VBE=2V, IC = 0 VCE=12V,IC=2mA IC=2mA,VCE=12V IC=10mA,IB=1mA 100 <0.4 MIN 30 30 5.0 500 500 500 0.75 0.20 TYP MAX UNIT V V V nΑ nA V V DataSheet4U.com Continental Device India Limited Data Sheet Page 1 of 4 Dat |
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CDIL |
NPN PLASTIC POWER TRANSISTOR e (open collector) Collector current Collector current (Peak) Base current K VCBO VCEO IC Ptot Tj VCEsat hFE max. max. max. max. max. max. min 500 400 7.0 50 150 V V A W °C 1.0 V 15 VCBO VCEO VEBO IC ICP IB max. max. max. max. max. max. 500 |
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CDIL |
NPN SILICON HIGH VOLTAGE TRANSISTOR s Cob VCB=10V, IE=0, Collector Output Capacitance f=1MHz Transition Frequency ft VCE=30V,IC=10mA, UNIT V V V mA mW deg C TYP 3.5 MAX 0.1 0.1 360 0.5 1.0 5.0 UNIT uA uA V V V pF 120 - MHz Continental Device India Limited Data Sheet Page 1 of |
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CDIL |
NPN EPITAXIAL SILICON POWER TRANSISTOR tor-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current VCBO VCEO VEBO IC max. max. max. max. 50 50 4.0 3.0 V V V A Continental Device India Limited Data Sheet Page 1 of 3 |
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CDIL |
NPN PLASTIC POWER TRANSISTOR |
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CDIL |
NPN PLASTIC POWER TRANSISTOR |
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CDIL |
PNP/NPN COMPLEMENTARY PLANAR SILICON TRANSISTORS |
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CDIL |
NPN Silicon Planar Epitaxial Transistor C=10mA, IB=0 VCE=12.5V, IC=12.5mA IC=15mA, IB=1.5mA IC=15mA, IB=1.5mA VCB=10V, IE=0,f=1MHz VCB=10V, IE= - 1mA f=30MHz VCE=12.5V, IC=12.5mA VCC=12.5V, IE= - 12.5mA f=45MHz MIN 25 20 0.8 300 28 TYP MAX 100 1.0 200 0.2 1.5 2.0 25 36 V V pF ps MHz dB UNI |
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CDIL |
PNP EPITAXIAL PLANAR SILICON TRANSISTOR tter Voltage Collector Emitter Saturation Voltage VCE(Sat) IC=700mA, IB=70mA* VBE(Sat) IC=700mA, IB=70mA* Base Emitter Saturation Voltage Dynamic Characteristics ft VCE=6V, IC=10mA, 50 Transition Frequency Cob VCB=6V, IE=0 Collector Output Capacitanc |
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Desde 2024. D4U Semiconductor.
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