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CDIL |
PNP PLASTIC POWER TRANSISTOR RATINGS (at TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) VCBO VCEO VEBO max. max. max. 150 V 150 V 5.0 V Continental Device |
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CDIL |
PNP PLASTIC POWER TRANSISTORS . 25 max. 150 max. min max. 1.5 70 240 V V A W °C V RATINGS (at TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) VCBO Collector-emitter voltage (open base) VCEO Emitter-base voltage (open collector) VEBO 96 |
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CDIL |
PNP/NPN COMPLEMENTARY SILICON EPITAXIAL TRANSISTOR |
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CDIL |
POWER TRANSISTOR Transition frequency IC=1.0A,VCE=4V fT PNP NPN Output Capacitance VCB=10V,IE=0,f=1MHz Co PNP NPN Switching Time VCC=30V, IB1=-IB2=0.15A Duty cycle =1% Turn on time Storage time Fall time ton ts tf 0.1 0 0.1 µs µs µs UNIT V V V A W ºC ºC MIN TYP M |
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CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR V, IE = 0 VBE=2V, IC = 0 VCE=12V,IC=2mA IC=2mA,VCE=12V IC=10mA,IB=1mA 100 <0.4 MIN 30 30 5.0 500 500 500 0.75 0.20 TYP MAX UNIT V V V nΑ nA V V Continental Device India Limited Data Sheet Page 1 of 4 NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC45 |
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CDIL |
POWER TRANSISTORS 280F IC=1A, VCE=5V R: 55 - 110 ; MIN TYP MAX 5.0 5.0 UNIT µΑ µΑ V V V UNIT V V V A A W ºC ºC 160 2.8 2.0 1.5 200 Base Emitter on Voltage DC Current Gain Collector Output Capacitance VBE (on) hFE Cob 55 28 480 220 30 pF MHz Transition Frequency |
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CDIL |
NPN EPITAXIAL PLANAR SILICON TRANSISTOR A 180 DC Current Gain VCE(Sat) IC=2A, IB=0.1A Collector Emitter Saturation Voltage Dynamic Characteristics ft VCE=2V,IC=0.5A, Transition Frequency f=100MHz Cob VCB=10V, IE=0 Collector Output Capacitance f=1MHz UNIT V V V A A W deg C TYP 150 35 MA |
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CDIL |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS itter Cutoff Current VEB=5V, IC=0 Collector Emitter Voltage IC=1mA, IB=0 D.C. Current Gain VCE=6V, I C=2mA Collector Emitter Saturation Voltage IC=10mA, I B=1mA Base Emitter On Voltage VCE=6V, I C=2mA DYNAMIC CHARACTERISTICS Transition Frequency VCE= |
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CDIL |
COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS 50 70 40 typ max 1.0 1.0 240 0.5 1.2 V V UNIT V µA µA fT Cob IC=500mA, VCE=2V IE=0, VCB=10V,f=1MHz PNP NPN Y 120 - 240 100 40 30 0.1 1.0 0.1 - MHz PF PF Switching Time Turn on Time Storage Time Fall Time Classification hFE* ton tstg tf VCC= |
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CDIL |
LOW FREQUENCY POWER AMPLIFIER TRANSISTOR 25°C max. max. max. max. max 15 15 5 800 200 V V V mA mW Continental Device India Limited Data Sheet Page 1 of 3 www.DataSheet4U.com CSA1362 Storage temperature Junction temperature THERMAL CHARACTERISTICS Tj = P (Rth j –t + Rth s –a) + Tamb T |
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CDIL |
PNP/NPN COMPLEMENTARY PLANAR SILICON TRANSISTORS |
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CDIL |
PNP SILICON PLANAR EPITAXIAL TRANSISTOR Voltage VCE(sat)* IC=500mA,IB=20mA CSA950 CSC2120 Base Emitter On Voltage Transition Frequency Collector Output Capacitance CSA950 CSC2120 VBE (on) VCE = 5V, IC= 10mA fT Cob IC=10mA, VCE=5V VCB=10V, IE=0 f=1MHz 19 13 Y : 160-320 pF pF CLASSIFICAT |
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CDIL |
PNP EPITAXIAL PLANAR SILICON TRANSISTOR VCE=6V* 0.6 Base Emitter Voltage Collector Emitter Saturation Voltage VCE(Sat) IC=700mA, IB=70mA* VBE(Sat) IC=700mA, IB=70mA* Base Emitter Saturation Voltage Dynamic Characteristics ft VCE=6V, IC=10mA, 50 Transition Frequency Cob VCB=6V, IE=0 Collec |
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CDIL |
PNP/NPN COMPLEMENTARY PLANAR SILICON TRANSISTORS Emitter Saturation Voltage VBE(on)* IC=5mA, VCE=5V 0.45 Base Emitter on Voltage Dynamic Characteristics Output Capacitance UNIT V V V A mA mW deg C TYP - MAX 1.0 1.0 320 1.5 0.75 UNIT V uA uA V V Cob NPN VCB=10V, IE=0, f=1MHz PNP ft NPN VCE=5V,IC |
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CDIL |
PNP EPITAXIAL PLANAR SILICON TRANSISTOR ion Frequency Collector Output Capacitance Base Spreading Resistance Noise Figure CLASSIFICATION *hFE CSA1015REV_5 281202D MIN TYP MAX 100 100 400 0.30 1.1 UNITS nA nA *hFE hFE VCE(sat) VBE(sat) IC =2mA, VCE=6V IC =150mA, VCE=6V IC=100mA,IB= 10 |
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CDIL |
LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR t (d.c.) Base current –V CBO –V CEO –V EBO –IC –I B max. max. max. max. max. 50 50 5 150 30 V V V mA mA Continental Device India Limited Data Sheet Page 1 of 2 www.DataSheet4U.com CSA1162 Total power dissipation at Tamb = 25°C Storage tempe |
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CDIL |
PNP SILICON EPITAXIAL POWER TRANSISTOR V IC=5A,IB=0.25A IC=5A,IB=0.25A MIN 50 120 - TYP - MAX 1.0 1.0 400 0.50 1.4 UNIT uA uA V V V ft Cob IC=1A, VCE=1V VCB=10V, IE=0 f=1MHz - 45 215 - MHz pF Continental Device India Limited Data Sheet Page 1 of 3 TO-220 Plastic Package C E |
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CDIL |
PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR VCE=5V, IC=1A Transition Frequency Cob VCB=10V, IE=0 Collector Output Capacitance f=1MHz *hFE Classification : R : 55-110, O : 80-160 UNIT V V V A A W deg C TYP 30 360 MAX 5.0 5.0 160 3.0 1.5 - UNIT uA uA V V V MHz pF Continental Device India |
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CDIL |
CSA 970 PNP SILICON PLANAR EPITAXIAL TRANSISTORS VEB=5V, IC=0 Collector Emitter Voltage IC=1mA, IB=0 D.C. Current Gain VCE=6V, I C=2mA Collector Emitter Saturation Voltage IC=10mA, I B=1mA Base Emitter On Voltage VCE=6V, I C=2mA DYNAMIC CHARACTERISTICS Transition Frequency VCE=6V, I C=1mA Collector |
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Desde 2024. D4U Semiconductor.
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