CDIL CIL Hoja de datos

No.	parte #	Fabricante	Descripción
1	CIL187	CDIL	NPN SILICON PLANAR EPITAXIAL TRANSISTORS e DC Current Gain IEBO VBE (on) VCE(sat) VCB=25V, IE = 0 Tj= 150ºC VEB=5V, IC = 0 IC =1A, VCE =1V IC=1A,IB=100mA hFE VCE=10V,IC=5mA VCE=1V,IC=300mA VCE=1V,IC=1A 50 100 40 1 10 1 0.5 300 DYNAMIC CHARACTERISTICS Transition Frequency Collector Ca
2	CIL351	CDIL	(CIL351 / CIL352) NPN SILICON PLANAR TRANSISTORS CIL351 CIL352 IC=10mA, IB=0.5mA IC=100mA, IB=5mA Base Emitter on Voltage DYNAMIC CHARACTERISTICS DESCRIPTION Transition Frequency VBE (on) IC=10mA, VCE=5V MIN 70 75 6.0 TYP MAX UNIT V V V 25 100 200 250 480 0.25 0.60 1.0 nA Collector Emitter S
3	CIL5xx	CDIL	(CILxxx) Epoxy Transistors
4	CIL352	CDIL	(CIL351 / CIL352) NPN SILICON PLANAR TRANSISTORS CIL351 CIL352 IC=10mA, IB=0.5mA IC=100mA, IB=5mA Base Emitter on Voltage DYNAMIC CHARACTERISTICS DESCRIPTION Transition Frequency VBE (on) IC=10mA, VCE=5V MIN 70 75 6.0 TYP MAX UNIT V V V 25 100 200 250 480 0.25 0.60 1.0 nA Collector Emitter S
5	CIL6xx	CDIL	(CILxxx) Epoxy Transistors
6	CIL7xx	CDIL	(CILxxx) Epoxy Transistors
7	CIL9xx	CDIL	(CILxxx) Epoxy Transistors
8	CIL147	CDIL	(CILxxx) Epoxy Transistors