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CDIL |
Triac GT IH dv/dt VTM IDRM Rth(j-a) Rth(j-c) Rth(j-c) Value <50 <50 <50 <100 <1.3 <50 >200 <1.55 <3.0 60 1.7 0.8 Unit mA mA mA mA V mA V/µs V mA Test condition T2+G+ VD=12V, IT=0.1A T2+G- VD=12V, IT=0.1A T2-G- VD=12V, IT=0.1A T2-G+ VD=12V, IT=0.1A VD=12 |
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CDIL |
Triac |
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CDIL |
Triac |
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CDIL |
Triac |
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CDIL |
Triac |
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CDIL |
Triac |
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CDIL |
Triac |
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CDIL |
Triac |
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CDIL |
Triac GT IH dv/dt VTM IDRM Rth(j-a) Rth(j-c) Rth(j-c) Value <50 <50 <50 <100 <1.3 <50 >200 <1.55 <3.0 60 1.7 0.8 Unit mA mA mA mA V mA V/µs V mA Test condition T2+G+ VD=12V, IT=0.1A T2+G- VD=12V, IT=0.1A T2-G- VD=12V, IT=0.1A T2-G+ VD=12V, IT=0.1A VD=12 |
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CDIL |
Triac GT IH dv/dt VTM IDRM Rth(j-a) Rth(j-c) Rth(j-c) Value <50 <50 <50 <100 <1.3 <50 >200 <1.55 <3.0 60 1.7 0.8 Unit mA mA mA mA V mA V/µs V mA Test condition T2+G+ VD=12V, IT=0.1A T2+G- VD=12V, IT=0.1A T2-G- VD=12V, IT=0.1A T2-G+ VD=12V, IT=0.1A VD=12 |
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CDIL |
Triac |
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CDIL |
Triac Series RM; Tj=125oC gate trigger voltage hold current critical rate of rise off-state voltage on-state voltage off-state leakage current thermal resistance VGT IH dv/dt VTM IDRM Rth (j-a) Rth (j-c) Disclaimer <1.30 <50 >200 <1.55 <3.00 50 <0.60 C/W The |
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CDIL |
(CMBTA05 / CMBTA06) TRANSISTORS pecified) Limiting values Collector –base voltage (open emitter) VCBO Collector –emitter voltage (open base) VCEO Emitter –base voltage (open collector) VEBO Collector current (d.c.) IC Total power dissipation up to Tamb = 25 °C Ptot Storage temperature |
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CDIL |
(CMBTA05 / CMBTA06) TRANSISTORS pecified) Limiting values Collector –base voltage (open emitter) VCBO Collector –emitter voltage (open base) VCEO Emitter –base voltage (open collector) VEBO Collector current (d.c.) IC Total power dissipation up to Tamb = 25 °C Ptot Storage temperature |
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CDIL |
(CMBTA42 / CMBTA43) TRANSISTORS less otherwise specified) Limiting values Collector –base voltage (open emitter) VCBO Collector –emitter voltage (open base) VCEO Emitter –base voltage (open collector) VEBO Collector current (d.c.) IC Total power dissipation up to Tamb = 25 °C Ptot Sto |
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CDIL |
(CMBTA42 / CMBTA43) TRANSISTORS less otherwise specified) Limiting values Collector –base voltage (open emitter) VCBO Collector –emitter voltage (open base) VCEO Emitter –base voltage (open collector) VEBO Collector current (d.c.) IC Total power dissipation up to Tamb = 25 °C Ptot Sto |
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CDIL |
TRANSISTORS VCBO VCES VCEO VEBO CONDITIONS VCB=400V, IE=0 VCE=400V, VBE=0 VEB=4V, IC=0 IC=100µA, IE=0 IC=100µA, VBE=0 IC=1mA, IB=0 IE=10µA, IC=0 IC=1mA, IB=0.1mA VCE(sat) IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA VCE =10V, IC=1mA VCE =10V, IC=10mA VCE =10V |
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CDIL |
(CMBTA55 / CMBTA56) TRANSISTORS erwise specified) Limiting values Collector –base voltage (open emitter) Collector –emitter voltage (open base) Emitter –base voltage (open collector) Collector current (d.c.) Total power dissipation up to Tamb = 25 °C Storage temperature Junction tempe |
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CDIL |
(CMBTA55 / CMBTA56) TRANSISTORS erwise specified) Limiting values Collector –base voltage (open emitter) Collector –emitter voltage (open base) Emitter –base voltage (open collector) Collector current (d.c.) Total power dissipation up to Tamb = 25 °C Storage temperature Junction tempe |
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CDIL |
(CMBTA92 / CMBTA93) TRANSISTORS erwise specified) Limiting values Collector –base voltage (open emitter) Collector –emitter voltage (open base) Emitter –base voltage (open collector) Collector current (d.c.) Total power dissipation up to Tamb = 25 °C Storage temperature Junction tempe |
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Desde 2024. D4U Semiconductor.
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