No. | parte # | Fabricante | Descripción | Hoja de Datos |
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CDIL |
SILICON PLANAR SCHOTTKY BARRIER DIODES |
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CDIL |
SILICON PLANAR SCHOTTKY DIODES Very Low Turn-on Voltage and Fast Switching ABSOLUTE MAXIMUM RATINGS DESCRIPTION Repetitive Peak Reverse Voltage Forward Continuous Current at Tamb=25ºC Repetitive Peak Forward Current tp <1ms δ <0.5, Tamb=25ºC SYMBOL VRRM IF IFRM VALUE 30 200 500 |
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CDIL |
SILICON PLANAR SCHOTTKY DIODES Very Low Turn-on Voltage and Fast Switching ABSOLUTE MAXIMUM RATINGS DESCRIPTION Repetitive Peak Reverse Voltage Forward Continuous Current at Tamb=25ºC Repetitive Peak Forward Current tp <1ms δ <0.5, Tamb=25ºC SYMBOL VRRM IF IFRM VALUE 30 200 500 |
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CDIL |
SILICON PLANAR SCHOTTKY DIODES 0mA BAT42 IF=2mA BAT43 IF=15mA BAT43 Reverse Current **IR VR=25V Tj=25ºC VR=25V Tj=100ºC DYNAMIC CHARACTERISTICS DESCRIPTION Diode Capacitance SYMBOL Cd Reverse Recovery Time When Switched From trr Detection Efficiency πv TEST CONDITION |
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CDIL |
SILICON PLANAR SCHOTTKY BARRIER DIODES |
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CDIL |
SILICON PLANAR SCHOTTKY DIODES 0mA BAT42 IF=2mA BAT43 IF=15mA BAT43 Reverse Current **IR VR=25V Tj=25ºC VR=25V Tj=100ºC DYNAMIC CHARACTERISTICS DESCRIPTION Diode Capacitance SYMBOL Cd Reverse Recovery Time When Switched From trr Detection Efficiency πv TEST CONDITION |
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CDIL |
SILICON PLANAR SCHOTTKY DIODES tance Reverse Recovery Time When Switched From SYMBOL Cd trr TEST CONDITION VR=1V, f=1MHz IF=10mA to IR=10mA, measured at IR=1mA, RL=100Ω MIN *Temperature coefficient of forward voltage - 0.6 %K at IF=1mA - 0.3 %K at IF=30mA BAT54Rev_1 071105E C |
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CDIL |
SILICON PLANAR SCHOTTKY DIODES 150 THERMAL RESISTANCE Junction to Soldering Point BAT64 *Rth (j-s) 255 BAT64-04, BAT64-06 355 BAT64-05 455 *Rth (j-s) For calculation of Rth(j-a) please refer to Application Note Thermal Resistance BAT64_06REV081105E Continental Device I |
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CDIL |
SILICON PLANAR SCHOTTKY DIODES 150 THERMAL RESISTANCE Junction to Soldering Point BAT64 *Rth (j-s) 255 BAT64-04, BAT64-06 355 BAT64-05 455 *Rth (j-s) For calculation of Rth(j-a) please refer to Application Note Thermal Resistance BAT64_06REV081105E Continental Device I |
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CDIL |
SILICON PLANAR SCHOTTKY DIODES 150 THERMAL RESISTANCE Junction to Soldering Point BAT64 *Rth (j-s) 255 BAT64-04, BAT64-06 355 BAT64-05 455 *Rth (j-s) For calculation of Rth(j-a) please refer to Application Note Thermal Resistance BAT64_06REV081105E Continental Device I |
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CDIL |
SILICON PLANAR SCHOTTKY DIODES 150 THERMAL RESISTANCE Junction to Soldering Point BAT64 *Rth (j-s) 255 BAT64-04, BAT64-06 355 BAT64-05 455 *Rth (j-s) For calculation of Rth(j-a) please refer to Application Note Thermal Resistance BAT64_06REV081105E Continental Device I |
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