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CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
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CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
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CDIL |
PNP PLASTIC POWER TRANSISTORS max. 150 V V A W °C VCEsat max. 1.3 V hFE min. max. 20 150 RATINGS (at TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) VC |
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CDIL |
NPN SILICON EPITAXIAL TRANSISTOR |
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CDIL |
PNP SILICON PLANAR EPITAXIAL TRANSISTOR , Transition Frequency MIN 45 60 5 MAX 0.1 0.1 40 40 25 250 0.5 1 50 UNIT V V V µA µA V V MHz Continental Device India Limited Data Sheet Page 1 of 3 2N6708 TO-237 Plastic Package TO-237 Plastic Package F B H DIM A B C D E F G H K L J MIN. |
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CDIL |
NPN PLASTIC POWER TRANSISTORS max. 150 V V A W °C VCEsat max. 1.3 V hFE min. max. 20 150 RATINGS (at TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) VC |
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CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
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CDIL |
NPN PLASTIC POWER TRANSISTOR |
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CDIL |
NPN PLASTIC POWER TRANSISTORS max. 150 V V A W °C VCEsat max. 1.3 V hFE min. max. 20 150 RATINGS (at TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) VC |
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CDIL |
NPN PLASTIC POWER TRANSISTORS max. 150 V V A W °C VCEsat max. 1.3 V hFE min. max. 20 150 RATINGS (at TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) VC |
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CDIL |
NPN SILICON PLANAR TRANSISTOR HARACTERISTICS Input Impedance * | hfe | *Pulse Test: Pulse Length= 300µs, Duty Cycle <2% IB=8mA, VCE=10V UNITS V V V A W mW/ºC W mW/ºC ºC MIN MAX UNITS 100 V 100 V 8.0 V 10 µA 30 90 4.0 V 0.5 KΩ Continental Device India Limited |
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CDIL |
NPN SILICON EPITAXIAL TRANSISTOR |
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CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
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CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
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CDIL |
NPN SILICON PLANNAR MEDIUM POWER TRANSISTOR Voltage Static Forward Current Transfer Ratio VBE(on) hFE VCE=2V, IC=350mA * VCE=2V, IC=10mA * VCE=2V, IC=350mA * Transition Frequency fT IC=200mA, VCE=5V, f=20MHz Collector-Base Capacitance CCB * Measured under pulsed conditions, Pulse width |
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CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
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CDIL |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS r Breakdown Voltage BVCEO* IC=1mA,IB=0 2N6515 2N6516, 6519 2N6517, 6520 MIN MAX 250 300 350 UNIT V V V Collector Base Breakdown Voltage BVCBO IC=100µA,IE=0 2N6515 250 V 2N6516, 6519 300 V 2N6517, 6520 350 V Emitter Base Breakdown Volt |
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CDIL |
NPN PLASTIC POWER TRANSISTOR ge (open base) Collector-emitter voltage (VBE = 1.5V) Collector-emitter voltage (RBE = 100Ω) Emitter-base voltage (open collector) VCBO VCEO VCEX VCER VEBO max. max. max. max. max. max. min. max. max. max. max. max. max. 4 60 V 50 V 7.0 A 40 W 150 |
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CDIL |
NPN PLASTIC POWER TRANSISTOR specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) VCBO VCEO VEBO 6121 6122 6123 6124 6125 6126 max. 45 60 80 V max. 45 60 80 V max. 4.0 A max. 40 W |
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CDIL |
NPN PLASTIC POWER TRANSISTOR specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) VCBO VCEO VEBO 6121 6122 6123 6124 6125 6126 max. 45 60 80 V max. 45 60 80 V max. 4.0 A max. 40 W |
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Desde 2024. D4U Semiconductor.
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